| InGaN/GaN light-emitting diode with a polarization tunnel junction ZH Zhang, S Tiam Tan, Z Kyaw, Y Ji, W Liu, Z Ju, N Hasanov, X Wei Sun, ... Applied Physics Letters 102 (19), 2013 | 132 | 2013 |
| Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer ZH Zhang, ST Tan, W Liu, Z Ju, K Zheng, Z Kyaw, Y Ji, N Hasanov, ... Optics express 21 (4), 4958-4969, 2013 | 62 | 2013 |
| Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering ZH Zhang, Z Ju, W Liu, ST Tan, Y Ji, Z Kyaw, X Zhang, N Hasanov, ... Optics letters 39 (8), 2483-2486, 2014 | 51 | 2014 |
| Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, ZB Kyaw, XL Zhang, SP Lu, ... Applied Physics Letters 102 (24), 2013 | 51 | 2013 |
| Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier Y Ji, ZH Zhang, ST Tan, Z Ju, Z Kyaw, N Hasanov, W Liu, X Sun, ... | 48 | 2013 |
| A hole accelerator for InGaN/GaN light-emitting diodes ZH Zhang, W Liu, ST Tan, Y Ji, L Wang, B Zhu, Y Zhang, S Lu, X Zhang, ... Applied Physics Letters 105 (15), 2014 | 45 | 2014 |
| Advantages of the blue InGaN/GaN light-emitting diodes with an AlGaN/GaN/AlGaN quantum well structured electron blocking layer ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, Z Kyaw, XL Zhang, SP Lu, ... Acs Photonics 1 (4), 377-381, 2014 | 42 | 2014 |
| On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes ZH Zhang, W Liu, ST Tan, Z Ju, Y Ji, Z Kyaw, X Zhang, N Hasanov, B Zhu, ... Optics Express 22 (S3), A779-A789, 2014 | 38 | 2014 |
| On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer ZH Zhang, Y Ji, W Liu, S Tiam Tan, Z Kyaw, Z Ju, X Zhang, N Hasanov, ... Applied Physics Letters 104 (7), 2014 | 38 | 2014 |
| Nonradiative recombination—critical in choosing quantum well number for InGaN/GaN light-emitting diodes YP Zhang, ZH Zhang, W Liu, ST Tan, ZG Ju, XL Zhang, Y Ji, LC Wang, ... Optics Express 23 (3), A34-A42, 2015 | 30 | 2015 |
| Low thermal-mass LEDs: size effect and limits S Lu, W Liu, ZH Zhang, ST Tan, Z Ju, Y Ji, X Zhang, Y Zhang, B Zhu, ... Optics Express 22 (26), 32200-32207, 2014 | 23 | 2014 |
| Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes Z Kyaw, ZH Zhang, W Liu, S Tiam Tan, Z Gang Ju, X Liang Zhang, Y Ji, ... Applied Physics Letters 104 (16), 2014 | 18 | 2014 |
| On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes Z Kyaw, ZH Zhang, W Liu, ST Tan, ZG Ju, XL Zhang, Y Ji, N Hasanov, ... Optics Express 22 (1), 809-816, 2014 | 12 | 2014 |
| Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts N Hasanov, B Zhu, VK Sharma, S Lu, Y Zhang, W Liu, ST Tan, XW Sun, ... Journal of Vacuum Science & Technology B 34 (1), 2016 | 10 | 2016 |
| Critical role of CdSe nanoplatelets in color-converting CdSe/ZnS nanocrystals for InGaN/GaN light-emitting diodes N Hasanov, VK Sharma, PL Hernandez Martinez, ST Tan, HV Demir Optics Letters 41 (12), 2883-2886, 2016 | 8 | 2016 |
| Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes B Zhu, W Liu, S Lu, Y Zhang, N Hasanov, X Zhang, Y Ji, ZH Zhang, ... Journal of Physics D: Applied Physics 49 (26), 265106, 2016 | 7 | 2016 |
| Room-temperature larger-scale highly ordered nanorod imprints of ZnO film Z Kyaw, W Jianxiong, K Dev, ST Tan, Z Ju, ZH Zhang, Y Ji, N Hasanov, ... Optics express 21 (22), 26846-26853, 2013 | 6 | 2013 |
| Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes B Zhu, ST Tan, W Liu, S Lu, Y Zhang, S Chen, N Hasanov, X Kang, ... IEEE Photonics Journal 8 (3), 1-8, 2016 | 3 | 2016 |
| Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata ZH Zhang, ST Tan, W Liu, Z Ju, K Zheng, Z Kyaw, Y Ji, N Hasanov, ... Optics Express 21 (15), 17670-17670, 2013 | 3 | 2013 |
| Effect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodes B Zhu, ZH Zhang, ST Tan, S Lu, Y Zhang, X Kang, N Wang, N Hasanov, ... Physica E: Low-dimensional Systems and Nanostructures 98, 29-32, 2018 | 1 | 2018 |