| Ammonia gas sensors based on chemically reduced graphene oxide sheets self-assembled on Au electrodes Y Wang, L Zhang, N Hu, Y Wang, Y Zhang, Z Zhou, Y Liu, S Shen, C Peng Nanoscale research letters 9, 1-12, 2014 | 147 | 2014 |
| Laser interference lithography for nanoscale structuring of materials: From laboratory to industry A Rodriguez, M Echeverría, M Ellman, N Perez, YK Verevkin, CS Peng, ... Microelectronic Engineering 86 (4-6), 937-940, 2009 | 140 | 2009 |
| Crosshatching on a SiGe film grown on a Si (001) substrate studied by Raman mapping and atomic force microscopy H Chen, YK Li, CS Peng, HF Liu, YL Liu, Q Huang, JM Zhou, QK Xue Physical Review B 65 (23), 233303, 2002 | 137 | 2002 |
| Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy W Li, T Jouhti, CS Peng, J Konttinen, P Laukkanen, EM Pavelescu, ... Applied Physics Letters 79 (21), 3386-3388, 2001 | 121 | 2001 |
| Relaxed layers grown on low-temperature Si buffers with low threading dislocation density JH Li, CS Peng, Y Wu, DY Dai, JM Zhou, ZH Mai Applied physics letters 71 (21), 3132-3134, 1997 | 120 | 1997 |
| Optical properties of Ge self-organized quantum dots in Si CS Peng, Q Huang, WQ Cheng, JM Zhou, YH Zhang, TT Sheng, CH Tung Physical Review B 57 (15), 8805, 1998 | 117 | 1998 |
| Relaxed alloy layers with low threading dislocation densities grown on low-temperature Si buffers CS Peng, ZY Zhao, H Chen, JH Li, YK Li, LW Guo, DY Dai, Q Huang, ... Applied physics letters 72 (24), 3160-3162, 1998 | 102 | 1998 |
| Confinement and electron-phonon interactions of the exciton in self-organized Ge quantum dots SH Kwok, PY Yu, CH Tung, YH Zhang, MF Li, CS Peng, JM Zhou Physical Review B 59 (7), 4980, 1999 | 94 | 1999 |
| Porous superhydrophobic and superoleophilic surfaces prepared by template assisted chemical vapor deposition F Zhang, Z Shi, L Chen, Y Jiang, C Xu, Z Wu, Y Wang, C Peng Surface and Coatings Technology 315, 385-390, 2017 | 90 | 2017 |
| Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures EM Pavelescu, CS Peng, T Jouhti, J Konttinen, W Li, M Pessa, ... Applied Physics Letters 80 (17), 3054-3056, 2002 | 86 | 2002 |
| 1.32-μm GaInNAs-GaAs laser with a low threshold current density CS Peng, T Jouhti, P Laukkanen, EM Pavelescu, J Konttinen, W Li, ... IEEE Photonics Technology Letters 14 (3), 275-277, 2002 | 68 | 2002 |
| High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation M Ellman, A Rodríguez, N Pérez, M Echeverria, YK Verevkin, CS Peng, ... Applied Surface Science 255 (10), 5537-5541, 2009 | 57 | 2009 |
| Improvement of Ge self-organized quantum dots by use of Sb surfactant CS Peng, Q Huang, WQ Cheng, JM Zhou, YH Zhang, TT Sheng, CH Tung Applied physics letters 72 (20), 2541-2543, 1998 | 57 | 1998 |
| Gas sensors based on chemically reduced holey graphene oxide thin films M Yang, Y Wang, L Dong, Z Xu, Y Liu, N Hu, ESW Kong, J Zhao, C Peng Nanoscale research letters 14, 1-8, 2019 | 54 | 2019 |
| Suppression of interfacial atomic diffusion in InGaNAs/GaAs heterostructures grown by molecular-beam epitaxy CS Peng, EM Pavelescu, T Jouhti, J Konttinen, IM Fodchuk, Y Kyslovsky, ... Applied physics letters 80 (25), 4720-4722, 2002 | 54 | 2002 |
| Electronic and structural properties of and surfaces studied by core-level photoemission and scanning tunneling microscopy P Laukkanen, M Kuzmin, RE Perälä, M Ahola, S Mattila, IJ Väyrynen, ... Physical Review B—Condensed Matter and Materials Physics 72 (4), 045321, 2005 | 50 | 2005 |
| Gas sensors based on assembled porous graphene multilayer frameworks for DMMP detection Y Wang, M Yang, W Liu, L Dong, D Chen, C Peng Journal of Materials Chemistry C 7 (30), 9248-9256, 2019 | 49 | 2019 |
| Ordered nanostructures written directly by laser interference C Tan, CS Peng, J Pakarinen, M Pessa, VN Petryakov, YK Verevkin, ... Nanotechnology 20 (12), 125303, 2009 | 44 | 2009 |
| Beryllium doping of GaAs and GaAsN studied from first principles HP Komsa, E Arola, J Pakarinen, CS Peng, TT Rantala Physical Review B—Condensed Matter and Materials Physics 79 (11), 115208, 2009 | 42 | 2009 |
| Strain-compensated GaInNAs structures for 1.3-/spl mu/m lasers T Jouhti, CS Peng, EM Pavelescu, J Konttinen, LA Gomes, OG Okhotnikov, ... IEEE Journal of selected topics in quantum electronics 8 (4), 787-794, 2002 | 42 | 2002 |
Emil Mihai PavelescuNational Institute for Research and Development in MicrotechnologiesPreverjeni e-poštni naslov na imt.ro
