Steven A. Vitale

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Juejun HuMITPreverjeni e-poštni naslov na mit.edu
Tian GuMassachusetts Institute of TechnologyPreverjeni e-poštni naslov na mit.edu
Carlos A. Ríos Ocampo (Carlos Ríos)University of Maryland, College Park | MSE & IREAPPreverjeni e-poštni naslov na umd.edu
Kathleen Ann Cerqua RichardsonUniversity of Central FloridaPreverjeni e-poštni naslov na creol.ucf.edu
Myungkoo Kang (강명구)Assistant Professor of Ceramic Engineering at Alfred UniversityPreverjeni e-poštni naslov na alfred.edu
Cosmin Constantin PopescuMITPreverjeni e-poštni naslov na mit.edu
Christopher M. RobertsMIT Lincoln LaboratoryPreverjeni e-poštni naslov na ll.mit.edu
Yifei Zhang (章逸飞)Hardware Engineer at Apple, PhD, Massachusetts Institute of TechnologyPreverjeni e-poštni naslov na mit.edu
Mikhail Y. ShalaginovMIT & 2Pi OpticsPreverjeni e-poštni naslov na mit.edu
Craig KeastAssociate Head, Advanced Technology Division, MIT Lincoln LaboratoryPreverjeni e-poštni naslov na ll.mit.edu
Joseph VargheseCaltechPreverjeni e-poštni naslov na caltech.edu
Vladimir LibermanMIT Lincoln LaboratoryPreverjeni e-poštni naslov na ll.mit.edu
Qingyang DuZhejiang LabPreverjeni e-poštni naslov na zhejianglab.edu.cn
Hyun Jung KimProfessor of Department of Aerospace Engineering, KAISTPreverjeni e-poštni naslov na kaist.ac.kr
Kiumars AryanaNIST, NASAPreverjeni e-poštni naslov na nasa.gov
Nuh GedikProfessor of Physics, MITPreverjeni e-poštni naslov na mit.edu
Leslie BrombergPreverjeni e-poštni naslov na psfc.mit.edu
Pablo Jarillo-HerreroProfessor of Physics, MITPreverjeni e-poštni naslov na mit.edu
Philip KimHarvard UniversityPreverjeni e-poštni naslov na g.harvard.edu
Dr. Travis C. WadeEvolve DiamondsPreverjeni e-poštni naslov na evolvediamonds.com

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Steven A. Vitale

Senior Technical Staff, MIT Lincoln Laboratory

Preverjeni e-poštni naslov na ll.mit.edu

Quantum Devices Solid State Physics Plasma Physics


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Liquid droplet dispersions formed by homogeneous liquid− liquid nucleation:“The Ouzo Effect” SA Vitale, JL Katz Langmuir 19 (10), 4105-4110, 2003	549	2003
Manufacturing a semiconductive device using a controlled atomic layer removal process SA Vitale US Patent 7,494,882, 2009	477	2009
Valleytronics: opportunities, challenges, and paths forward SA Vitale, D Nezich, JO Varghese, P Kim, N Gedik, P Jarillo‐Herrero, ... Small 14 (38), 1801483, 2018	412	2018
Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials C Ríos, Q Du, Y Zhang, CC Popescu, MY Shalaginov, P Miller, C Roberts, ... PhotoniX 3 (1), 26, 2022	204	2022
Silicon etching yields in and HBr high density plasmas SA Vitale, H Chae, HH Sawin Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (5 …, 2001	150	2001
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform J Zhu, JH Park, SA Vitale, W Ge, GS Jung, J Wang, M Mohamed, T Zhang, ... Nature Nanotechnology 18 (5), 456-463, 2023	143	2023
Work-function-tuned TiN metal gate FDSOI transistors for subthreshold operation SA Vitale, J Kedzierski, P Healey, PW Wyatt, CL Keast IEEE Transactions on Electron Devices 58 (2), 419-426, 2010	141	2010
FDSOI process technology for subthreshold-operation ultralow-power electronics SA Vitale, PW Wyatt, N Checka, J Kedzierski, CL Keast Proceedings of the IEEE 98 (2), 333-342, 2010	141	2010
Plasma–surface kinetics and simulation of feature profile evolution in etching of polysilicon W Jin, SA Vitale, HH Sawin Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (6 …, 2002	120	2002
Multi‐level electro‐thermal switching of optical phase‐change materials using graphene C Ríos, Y Zhang, MY Shalaginov, S Deckoff-Jones, H Wang, S An, ... Advanced Photonics Research 2 (1), 2000034, 2021	109	2021
Progress toward diamond power field‐effect transistors MW Geis, TC Wade, CH Wuorio, TH Fedynyshyn, B Duncan, ME Plaut, ... physica status solidi (a) 215 (22), 1800681, 2018	98	2018
Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching SA Vitale, BA Smith Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003	90	2003
Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance T Wade, MW Geis, TH Fedynyshyn, SA Vitale, JO Varghese, DM Lennon, ... Diamond and Related Materials 76, 79-85, 2017	52	2017
Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in and high density plasmas SA Vitale, H Chae, HH Sawin Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (6 …, 2000	52	2000
Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device F Mehrad, S Yu, SA Vitale, JG Tran US Patent 7,727,842, 2010	49	2010
Etching of organosilicate glass low-k dielectric films in halogen plasmas SA Vitale, HH Sawin Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (3 …, 2002	46	2002
Silicon dioxide etching yield measurements with inductively coupled fluorocarbon plasmas H Chae, SA Vitale, HH Sawin Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21 (2 …, 2003	38	2003
Transient tap couplers for wafer-level photonic testing based on optical phase change materials Y Zhang, Q Zhang, C Ríos, MY Shalaginov, JB Chou, C Roberts, P Miller, ... ACS Photonics 8 (7), 1903-1908, 2021	37	2021
The effect of a carbon-carbon double bond on electron beam-generated plasma decomposition of trichloroethylene and 1, 1, 1-trichloroethane SA Vitale, K Hadidi, DR Cohn, P Falkos Plasma Chemistry and Plasma Processing 17, 59-78, 1997	31	1997
Chemical and semiconducting properties of NO2-activated H-terminated diamond MW Geis, TH Fedynyshyn, ME Plaut, TC Wade, CH Wuorio, SA Vitale, ... Diamond and Related Materials 84, 86-94, 2018	29	2018

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