| Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices W Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ... Nature communications 10 (1), 81, 2019 | 298 | 2019 |
| Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ... Frontiers in neuroscience 10, 56, 2016 | 256 | 2016 |
| Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices E Ambrosi, A Bricalli, M Laudato, D Ielmini Faraday discussions 213, 87-98, 2019 | 95 | 2019 |
| Bipolar switching in chalcogenide phase change memory N Ciocchini, M Laudato, M Boniardi, E Varesi, P Fantini, AL Lacaita, ... Scientific reports 6 (1), 29162, 2016 | 83 | 2016 |
| SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini 2016 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2016 | 82 | 2016 |
| Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part II: Select devices A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini IEEE Transactions on Electron Devices 65 (1), 122-128, 2017 | 70 | 2017 |
| Volatile resistive switching memory based on Ag ion drift/diffusion Part I: Numerical modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3795-3801, 2019 | 67 | 2019 |
| Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part I: Memory devices A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini IEEE Transactions on Electron Devices 65 (1), 115-121, 2017 | 66 | 2017 |
| Volatile resistive switching memory based on Ag ion drift/diffusion—Part II: Compact modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3802-3808, 2019 | 50 | 2019 |
| Composition-controlled atomic layer deposition of phase-change memories and ovonic threshold switches with high performance V Adinolfi, L Cheng, M Laudato, RC Clarke, VK Narasimhan, S Balatti, ... ACS nano 13 (9), 10440-10447, 2019 | 42 | 2019 |
| Impact of thermoelectric effects on phase change memory characteristics N Ciocchini, M Laudato, A Leone, P Fantini, AL Lacaita, D Ielmini IEEE Transactions on Electron Devices 62 (10), 3264-3271, 2015 | 31 | 2015 |
| Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing W Wang, A Bricalli, M Laudato, E Ambrosi, E Covi, D Ielmini 2018 IEEE International Electron Devices Meeting (IEDM), 40.3. 1-40.3. 4, 2018 | 23 | 2018 |
| Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks V Milo, G Pedretti, M Laudato, A Bricalli, E Ambrosi, S Bianchi, E Chicca, ... 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018 | 17 | 2018 |
| ALD GeAsSeTe ovonic threshold switch for 3D stackable crosspoint memory M Laudato, V Adinolfi, R Clarke, M McBriarty, S Jewhurst, K Littau 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 16 | 2020 |
| Atomic layer deposition of germanium-selenium-tellurium compounds for low-leakage, tunable ovonic threshold switches V Adinolfi, M Laudato, R Clarke, VK Narasimhan, L Cheng, K Littau Journal of Vacuum Science & Technology A 38 (5), 2020 | 14 | 2020 |
| ALD heterojunction ovonic threshold switches V Adinolfi, M Laudato, R Clarke, S Jewhurst, ME McBriarty, S Hoang, ... ACS Applied Electronic Materials 2 (12), 3818-3824, 2020 | 9 | 2020 |
| Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage N Polino, M Laudato, E Ambrosi, A Bricalli, D Ielmini ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 1 | 2019 |
| Universal thermoelectric characteristic in phase change memories N Ciocchini, M Laudato, A Leone, P Fantini, AL Lacaita, D Ielmini 2015 IEEE International Memory Workshop (IMW), 1-4, 2015 | 1 | 2015 |
| (Invited) ALD of Phase Change and Threshold Switching Materials for Next-Generation Nonvolatile Memory Devices V Adinolfi, R Clarke, M Laudato, S Jewhurst, M McBriarty, S Hoang, ... Electrochemical Society Meeting Abstracts prime2020, 1684-1684, 2020 | | 2020 |
| Study of novel devices for crosspoint memory and neuromorphic applications M Laudato Politecnico di Milano, 2018 | | 2018 |