Nilesh Goel

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	Vse	Od leta 2020
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Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)Preverjeni e-poštni naslov na ee.iitb.ac.in
Subhadeep MukhopadhyayIntel; Former Principal Engineer in TSMC; Former Ph.D. student, Indian Institute Of TechnologyPreverjeni e-poštni naslov na intel.com
Narendra PariharIntel CorporationPreverjeni e-poštni naslov na intel.com
Kaustubh JoshiIntelPreverjeni e-poštni naslov na ieee.org
Sonal SinghalDepartment of Chemistry, Panjab UniversityPreverjeni e-poštni naslov na pu.ac.in
Sujay DesaiPh.D. Student in Electrical Engineering, University of California Berkeley (Past: IIT Bombay)Preverjeni e-poštni naslov na eecs.berkeley.edu
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityPreverjeni e-poštni naslov na purdue.edu
Nilotpal ChoudhuryDevice Solutions, Samsung electronicsPreverjeni e-poštni naslov na samsung.com
Tejas NaphadeB.Tech + M.Tech, Indian Institute of Technology BombayPreverjeni e-poštni naslov na iitb.ac.in
Shashank GuptaLightmatterPreverjeni e-poštni naslov na lightmatter.co
Rajan PandeyVellore Institute of TechnologyPreverjeni e-poštni naslov na vit.ac.in
Kota MuraliIBMPreverjeni e-poštni naslov na in.ibm.com
Uma SharmaMicron Technology Inc.Preverjeni e-poštni naslov na micron.com
Sandip DeBASFPreverjeni e-poštni naslov na basf.com
Vipul ChaudharyDepartment of Electrical Engineering, Indian Institute of Technology BombayPreverjeni e-poštni naslov na iitb.ac.in
Hussam AmrouchProfessor (W3) of AI Processor Design, Technical University of MunichPreverjeni e-poštni naslov na tum.de
Jörg HenkelProfessor of Computer Science, Karlsruhe Institute of TechnologyPreverjeni e-poštni naslov na kit.edu
Subrat MishraIMEC, BelgiumPreverjeni e-poštni naslov na imec.be
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurPreverjeni e-poštni naslov na iitk.ac.in
Chetan Kumar DabhiUniversity of California, BerkeleyPreverjeni e-poštni naslov na berkeley.edu

Spremljaj

Nilesh Goel

Birla Institute of Technology and Science, Pilani Dubai Campus (BITS Pilani Dubai Campus)

Preverjeni e-poštni naslov na ieee.org

Device reliability Reliability aware circuits characterization and modeling.


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
A comparative study of different physics-based NBTI models S Mahapatra, N Goel, S Desai, S Gupta, B Jose, S Mukhopadhyay, ... IEEE Transactions on Electron Devices 60 (3), 901-916, 2013	344	2013
BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation N Parihar, N Goel, S Mukhopadhyay, S Mahapatra IEEE Transactions on Electron Devices 65 (2), 392-403, 2017	122	2017
A consistent physical framework for N and P BTI in HKMG MOSFETs K Joshi, S Mukhopadhyay, N Goel, S Mahapatra 2012 IEEE international reliability physics symposium (IRPS), 5A. 3.1-5A. 3.10, 2012	112	2012
A modeling framework for NBTI degradation under dynamic voltage and frequency scaling N Parihar, N Goel, A Chaudhary, S Mahapatra IEEE Transactions on Electron Devices 63 (3), 946-953, 2016	68	2016
A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence S Desai, S Mukhopadhyay, N Goel, N Nanaware, B Jose, K Joshi, ... 2013 IEEE International Reliability Physics Symposium (IRPS), XT. 2.1-XT. 2.11, 2013	60	2013
Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ... 2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014	52	2014
Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress N Goel, T Naphade, S Mahapatra 2015 IEEE International Reliability Physics Symposium, 4A. 3.1-4A. 3.7, 2015	51	2015
A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs N Goel, K Joshi, S Mukhopadhyay, N Nanaware, S Mahapatra Microelectronics Reliability 54 (3), 491-519, 2014	50	2014
Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs N Parihar, U Sharma, S Mukhopadhyay, N Goel, A Chaudhary, R Rao, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-1.1-XT-1.11, 2017	34	2017
A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs N Goel, S Mukhopadhyay, N Nanaware, S De, RK Pandey, K Murali, ... 2014 IEEE International Reliability Physics Symposium, 6A. 4.1-6A. 4.12, 2014	34	2014
A comparative study of NBTI and PBTI using different experimental techniques S Mukhopadhyay, N Goel, S Mahapatra IEEE Transactions on Electron Devices 63 (10), 4038-4045, 2016	33	2016
Device to circuit framework for activity-dependent nbti aging in digital circuits A Thirunavukkarasu, H Amrouch, J Joe, N Goel, N Parihar, S Mishra, ... IEEE Transactions on Electron Devices 66 (1), 316-323, 2018	32	2018
Ultrafast AC–DC NBTI characterization of deep IL scaled HKMG p-MOSFETs N Goel, N Nanaware, S Mahapatra IEEE electron device letters 34 (12), 1476-1478, 2013	31	2013
Investigation of stochastic implementation of reaction diffusion (RD) models for NBTI related interface trap generation T Naphade, N Goel, PR Nair, S Mahapatra 2013 IEEE International Reliability Physics Symposium (IRPS), XT. 5.1-XT. 5.11, 2013	31	2013
Modeling of DC-AC NBTI Stress-Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs N Choudhury, N Parihar, N Goel, A Thirunavukkarasu, S Mahapatra IEEE Journal of the Electron Devices Society 8, 1281-1288, 2020	30	2020
Characterization methods for BTI degradation and associated gate insulator defects S Mahapatra, N Goel, A Chaudhary, K Joshi, S Mukhopadhyay Fundamentals of Bias Temperature Instability in MOS Transistors …, 2016	29	2016
Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages N Goel, P Dubey, J Kawa, S Mahapatra 2015 IEEE International Reliability Physics Symposium, CA. 5.1-CA. 5.7, 2015	25	2015
A detailed study of gate insulator process dependence of NBTI using a compact model K Joshi, S Mukhopadhyay, N Goel, N Nanware, S Mahapatra IEEE Transactions on Electron Devices 61 (2), 408-415, 2014	22	2014
A comprehensive DC and AC PBTI modeling framework for HKMG n-MOSFETs S Mukhopadhyay, N Parihar, N Goel, S Mahapatra IEEE Transactions on Electron Devices 64 (4), 1474-1481, 2017	18	2017
Reaction-diffusion model AE Islam, N Goel, S Mahapatra, MA Alam Fundamentals of Bias Temperature Instability in MOS Transistors …, 2016	17	2016

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