| Resistive switching by voltage-driven ion migration in bipolar RRAM—Part II: Modeling S Larentis, F Nardi, S Balatti, DC Gilmer, D Ielmini IEEE Transactions on Electron Devices 59 (9), 2468-2475, 2012 | 569 | 2012 |
| Physical models of size-dependent nanofilament formation and rupture in NiO resistiveswitching memories D Ielmini, F Nardi, C Cagli Nanotechnology 22 (25), 254022, 2011 | 273 | 2011 |
| Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories D Ielmini, F Nardi, C Cagli Applied Physics Letters 96 (5), 2010 | 224 | 2010 |
| Resistive switching by voltage-driven ion migration in bipolar RRAM—Part I: Experimental study F Nardi, S Larentis, S Balatti, DC Gilmer, D Ielmini IEEE Transactions on Electron Devices 59 (9), 2461-2467, 2012 | 215 | 2012 |
| Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction C Cagli, D Ielmini, F Nardi, AL Lacaita 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 212 | 2008 |
| Universal reset characteristics of unipolar and bipolar metal-oxide RRAM D Ielmini, F Nardi, C Cagli IEEE Transactions on Electron Devices 58 (10), 3246-3253, 2011 | 171 | 2011 |
| Evidence for voltage-driven set/reset processes in bipolar switching RRAM D Ielmini, F Nardi, S Balatti IEEE Transactions on Electron Devices 59 (8), 2049-2056, 2012 | 158 | 2012 |
| Modeling of set/reset operations in NiO-based resistive-switching memory devices C Cagli, F Nardi, D Ielmini IEEE Transactions on electron devices 56 (8), 1712-1720, 2009 | 149 | 2009 |
| Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters Solid-State Electronics 58 (1), 42-47, 2011 | 145 | 2011 |
| Resistance transition in metal oxides induced by electronic threshold switching D Ielmini, C Cagli, F Nardi Applied Physics Letters 94 (6), 2009 | 143 | 2009 |
| Complementary switching in oxide-based bipolar resistive-switching random memory F Nardi, S Balatti, S Larentis, DC Gilmer, D Ielmini IEEE transactions on electron devices 60 (1), 70-77, 2012 | 142 | 2012 |
| Size-dependent retention time in NiO-based resistive-switching memories D Ielmini, F Nardi, C Cagli, AL Lacaita IEEE Electron Device Letters 31 (4), 353-355, 2010 | 141 | 2010 |
| Spike-timing dependent plasticity in a transistor-selected resistive switching memory S Ambrogio, S Balatti, F Nardi, S Facchinetti, D Ielmini Nanotechnology 24 (38), 384012, 2013 | 134 | 2013 |
| Complementary switching in metal oxides: Toward diode-less crossbar RRAMs F Nardi, S Balatti, S Larentis, D Ielmini 2011 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2011 | 110 | 2011 |
| Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices D Ielmini, S Spiga, F Nardi, C Cagli, A Lamperti, E Cianci, M Fanciulli Journal of Applied Physics 109 (3), 2011 | 92 | 2011 |
| Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires C Cagli, F Nardi, B Harteneck, Z Tan, Y Zhang, D Ielmini Small 7 (20), 2899-2905, 2011 | 87 | 2011 |
| Filament diffusion model for simulating reset and retention processes in RRAM S Larentis, C Cagli, F Nardi, D Ielmini Microelectronic Engineering 88 (7), 1119-1123, 2011 | 80 | 2011 |
| Nanowire-based resistive switching memories: devices, operation and scaling D Ielmini, C Cagli, F Nardi, Y Zhang Journal of Physics D: Applied Physics 46 (7), 074006, 2013 | 65 | 2013 |
| Switching of nanosized filaments in NiO by conductive atomic force microscopy F Nardi, D Deleruyelle, S Spiga, C Muller, B Bouteille, D Ielmini Journal of Applied Physics 112 (6), 2012 | 50 | 2012 |
| Sub-10 µA reset in NiO-based resistive switching memory (RRAM) cells F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters 2010 IEEE International Memory Workshop, 1-4, 2010 | 29 | 2010 |
Daniele IelminiProfessor of ElectronicsPreverjeni e-poštni naslov na elet.polimi.it