Članki z zahtevami za javni dostop - Daniele IelminiVeč o tem
Ni na voljo nikjer: 59
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament
S Balatti, S Larentis, DC Gilmer, D Ielmini
Advanced materials 25 (10), 1474-1478, 2013
Zahteve: Fondazione Cariplo
Logic computation in phase change materials by threshold and memory switching
M Cassinerio, N Ciocchini, D Ielmini
Advanced Materials 25 (41), 5975-5980, 2013
Zahteve: Fondazione Cariplo
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity
V Milo, G Pedretti, R Carboni, A Calderoni, N Ramaswamy, S Ambrogio, ...
2016 IEEE International Electron Devices Meeting (IEDM), 16.8. 1-16.8. 4, 2016
Zahteve: European Commission
Set variability and failure induced by complementary switching in bipolar RRAM
S Balatti, S Ambrogio, DC Gilmer, D Ielmini
IEEE electron device letters 34 (7), 861-863, 2013
Zahteve: Fondazione Cariplo
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
2016 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2016
Zahteve: European Commission
Reset statistics of NiO-based resistive switching memories
S Long, C Cagli, D Ielmini, M Liu, J Sune
IEEE electron device letters 32 (11), 1570-1572, 2011
Zahteve: Government of Spain
Nanowire-based resistive switching memories: devices, operation and scaling
D Ielmini, C Cagli, F Nardi, Y Zhang
Journal of Physics D: Applied Physics 46 (7), 074006, 2013
Zahteve: Fondazione Cariplo
Evidence for non-arrhenius kinetics of crystallization in phase change memory devices
N Ciocchini, M Cassinerio, D Fugazza, D Ielmini
IEEE transactions on electron devices 60 (11), 3767-3774, 2013
Zahteve: Fondazione Cariplo
Introduction to nanoionic elements for information technology
R Waser, D Ielmini, H Akinaga, H Shima, HSP Wong, JJ Yang, S Yu
Resistive switching: From fundamentals of nanoionic redox processes to …, 2016
Zahteve: German Research Foundation
Attractor networks and associative memories with STDP learning in RRAM synapses
V Milo, D Ielmini, E Chicca
2017 IEEE International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2017
Zahteve: German Research Foundation, European Commission
Voltage-dependent random telegraph noise (RTN) in HfOxresistive RAM
S Balatti, S Ambrogio, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
2014 IEEE International Reliability Physics Symposium, MY. 4.1-MY. 4.6, 2014
Zahteve: Fondazione Cariplo
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory
R Carboni, S Ambrogio, W Chen, M Siddik, J Harms, A Lyle, W Kula, ...
2016 IEEE International Electron Devices Meeting (IEDM), 21.6. 1-21.6. 4, 2016
Zahteve: European Commission
Modeling-based design of brain-inspired spiking neural networks with RRAM learning synapses
G Pedretti, S Bianchi, V Milo, A Calderoni, N Ramaswamy, D Ielmini
2017 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2017
Zahteve: European Commission
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM)
G Pedretti, E Ambrosi, D Ielmini
2021 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2021
Zahteve: Government of Italy
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks
V Milo, G Pedretti, M Laudato, A Bricalli, E Ambrosi, S Bianchi, E Chicca, ...
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
Zahteve: German Research Foundation, European Commission
Universal switching behavior
D Ielmini, S Menzel
Resistive Switching: From Fundamentals of Nanoionic Redox Processes to …, 2016
Zahteve: German Research Foundation
Variability and failure of set process in HfO2 RRAM
S Balatti, S Ambrogio, D Ielmini, DC Gilmer
2013 5th IEEE International Memory Workshop, 38-41, 2013
Zahteve: Fondazione Cariplo
Brain-inspired recurrent neural network with plastic RRAM synapses
V Milo, E Chicca, D Ielmini
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
Zahteve: German Research Foundation, European Commission
Invited tutorial: Analog matrix computing with crosspoint resistive memory arrays
Z Sun, D Ielmini
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (7), 3024-3029, 2022
Zahteve: National Natural Science Foundation of China
Neuromorphic computing with hybrid memristive/CMOS synapses for real-time learning
D Ielmini, S Ambrogio, V Milo, S Balatti, ZQ Wang
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 1386-1389, 2016
Zahteve: European Commission
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