| van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016 | 741 | 2016 |
| High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015 | 331 | 2015 |
| Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... arXiv preprint arXiv:1604.06850, 2016 | 245* | 2016 |
| Gate-tunable resonant tunneling in double bilayer graphene heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ... Nano letters 15 (1), 428-433, 2015 | 202 | 2015 |
| Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ... IEEE Electron Device Letters 36 (4), 405-407, 2015 | 69 | 2015 |
| Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ... Nano Letters 16 (8), 4975-4981, 2016 | 44 | 2016 |
| Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors S Kang, HCP Movva, A Sanne, A Rai, SK Banerjee Journal of Applied Physics 119 (12), 2016 | 26 | 2016 |
| Room Temperature Gate-tunable Negative Differential Resistance in MoS2/hBN/WSe2 Heterostructures HCP Movva, S Kang, A Rai, K Kim, B Fallahazad, T Taniguchi, ... 2016 74th Annual Device Research Conference (DRC), 2016 | 21 | 2016 |
| Self-aligned dual-gate single-electron transistors S Kang, DH Kim, IH Park, JH Kim, JE Lee, JD Lee, BG Park Japanese journal of applied physics 47 (4S), 3118, 2008 | 18 | 2008 |
| ReS2-based interlayer tunnel field effect transistor OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ... Journal of Applied Physics 122 (24), 2017 | 14 | 2017 |
| Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee Applied Physics Letters 104 (8), 2014 | 14 | 2014 |
| Fabrication and characteristics of self-aligned dual-gate single-electron transistors DS Lee, S Kang, KC Kang, JE Lee, JH Lee, KJ Song, DM Kim, JD Lee, ... IEEE transactions on nanotechnology 8 (4), 492-497, 2009 | 14 | 2009 |
| Fabrication and characterization of fin SONOS flash memory with separated double-gate structure JG Yun, Y Kim, IH Park, JH Lee, S Kang, DH Lee, S Cho, DH Kim, GS Lee, ... Solid-state electronics 52 (10), 1498-1504, 2008 | 14 | 2008 |
| Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications S Kang, X Mou, B Fallahazad, N Prasad, X Wu, A Valsaraj, HCP Movva, ... Journal of Physics D: Applied Physics 50 (38), 383002, 2017 | 10 | 2017 |
| Capacitorless dynamic random access memory cell with highly scalable surrounding gate structure H Jeong, YS Lee, S Kang, IH Park, WY Choi, H Shin, JD Lee, BG Park Japanese journal of applied physics 46 (4S), 2143, 2007 | 9 | 2007 |
| Capacitorless DRAM cell with highly scalable surrounding gate structure H Jeong, YS Lee, S Kang, IH Park, WY Choi, H Shin, JD Lee, BG Park SOLID STATE DEVICES AND MATERIALS 2006, 574, 2006 | 7 | 2006 |
| Improving the endurance characteristics through boron implant at active edge in 1 G nand flash D Kang, S Chang, S Seo, Y Song, H Yoon, E Lee, D Chang, W Lee, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 6 | 2007 |
| Analytical modeling of field-induced interband tunneling-effect transistors and its application SH Song, KR Kim, S Kang, JH Kim, J Im Huh, KC Kang, KW Song, JD Lee, ... IEEE transactions on nanotechnology 5 (3), 192-200, 2006 | 5 | 2006 |
| Poly-silicon quantum dot single electron transistors KC Kang, S Kang, HS Yang, S Song, J Kim, JD Lee, BG Park 2007 International Semiconductor Device Research Symposium, 1-2, 2007 | 3* | 2007 |
| Top-gated WSe2 field-effect transistors with Pt contacts HCP Movva, A Rai, S Kang, K Kim, S Guchhait, T Taniguchi, K Watanabe, ... 2015 73rd Annual Device Research Conference (DRC), 131-132, 2015 | 2 | 2015 |
Emanuel TutucProfessor, The University of Texas at AustinPreverjeni e-poštni naslov na mer.utexas.edu
