Članki z zahtevami za javni dostop - Weidong Song(宋伟东)Več o tem
Ni na voljo nikjer: 23
The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers
Y Zhang, L Yu, K Li, H Pi, J Diao, X Wang, Y Shen, C Zhang, W Hu, ...
Superlattices and Microstructures 82, 151-157, 2015
Zahteve: National Natural Science Foundation of China
Bifunctional ultrathin PCBM enables passivated trap states and cascaded energy level toward efficient inverted perovskite solar cells
D Li, W Kong, H Zhang, D Wang, W Li, C Liu, H Chen, W Song, F Gao, ...
ACS applied materials & interfaces 12 (17), 20103-20109, 2020
Zahteve: National Natural Science Foundation of China
Improved photoresponse of a-axis GaN microwire/p-polymer hybrid photosensor by the piezo-phototronic effect
W Song, X Wang, C Xia, R Wang, L Zhao, D Guo, H Chen, J Xiao, S Su, ...
Nano Energy 33, 272-279, 2017
Zahteve: National Natural Science Foundation of China
In situ conformal coating of polyaniline on gan microwires for ultrafast, self-driven heterojunction ultraviolet photodetectors
Y Sun, W Song, F Gao, X Wang, X Luo, J Guo, B Zhang, J Shi, C Cheng, ...
ACS Applied Materials & Interfaces 12 (11), 13473-13480, 2020
Zahteve: National Natural Science Foundation of China
Optimization of all figure-of-merits in well-aligned GaN microwire array based Schottky UV photodetectors by Si doping
H Wang, X Wang, X Luo, W Song, J Guo, Y Sun, B Zhang, L Wang, ...
Acs Photonics 6 (8), 1972-1980, 2019
Zahteve: National Natural Science Foundation of China
High-performance UV–visible photodetectors based on CH3NH3PbI3-xClx/GaN microwire array heterostructures
Q Liu, YQ Yang, X Wang, W Song, X Luo, J Guo, J Shi, C Cheng, D Li, ...
Journal of Alloys and Compounds 864, 158710, 2021
Zahteve: National Natural Science Foundation of China
Fowler-Nordheim tunneling mechanism for performance improvement in graphene 2D/GaN 3D heterojunction ultraviolet photodetector
Q Liu, W Song, X Wang, Z Zhao, C Zhou, K Chen, S Zhan, F Gao, S Li
Carbon 201, 1061-1067, 2023
Zahteve: National Natural Science Foundation of China
Realization of in-plane GaN microwire array based ultraviolet photodetector with high responsivity on a Si (100) substrate
D Guo, X Wang, HU Wang, W Song, H Chen, M Qi, X Luo, X Luo, G Li, ...
ACS Photonics 5 (12), 4810-4816, 2018
Zahteve: National Natural Science Foundation of China
A sustainable solvent system for processing CsPbBr 3 films for solar cells via an anomalous sequential deposition route
X Cao, G Zhang, Y Cai, L Jiang, W Yang, W Song, X He, Q Zeng, Y Jia, ...
Green Chemistry 23 (1), 470-478, 2021
Zahteve: National Natural Science Foundation of China
Performance improvement of UV light-emitting diodes with triangular quantum barriers
G Li, W Song, H Wang, X Luo, X Luo, S Li
IEEE Photonics Technology Letters 30 (12), 1071-1074, 2018
Zahteve: National Natural Science Foundation of China
a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors
W Song, R Wang, X Wang, D Guo, H Chen, Y Zhu, L Liu, Y Zhou, Q Sun, ...
ACS Applied Materials & Interfaces 9 (47), 41435-41442, 2017
Zahteve: National Natural Science Foundation of China
Long and Ultrastable All-Inorganic Single-Crystal CsPbBr3Microwires: One-Step Solution In-Plane Self-Assembly at Low Temperature and Application for High …
Y Yang, F Gao, Q Liu, J Dong, D Li, X Luo, J Guo, J Shi, Y Lin, W Song, ...
The Journal of Physical Chemistry Letters 11 (17), 7224-7231, 2020
Zahteve: National Natural Science Foundation of China
The advantages of AlGaN-based ultraviolet light-emitting diodes with Al content graded AlGaN barriers
Y Shen, Y Zhang, L Yu, K Li, H Pi, J Diao, W Hu, W Song, C Zhang, S Li
Journal of Display Technology 11 (9), 677-681, 2015
Zahteve: National Natural Science Foundation of China
Ultraviolet light-emitting diodes with polarization-doped p-type layer
W Hu, P Qin, W Song, C Zhang, R Wang, L Zhao, C Xia, S Yuan, Y Yin, ...
Superlattices and Microstructures 97, 353-357, 2016
Zahteve: National Natural Science Foundation of China
Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion
R Hou, X Fang, L Li, S Li, W Song, X Xie, Z Xie, W Xu, S Pan, D Li, C Xiao, ...
Applied Physics A 123, 1-7, 2017
Zahteve: National Natural Science Foundation of China
A single InGaN/GaN multiple quantum wells microwire light-emitting diode with high efficiency current injection and spreading
W Song, H Chen, X Luo, Y Sun, X Wang, H Wang, D Guo, M Qi, G Li, S Li
Journal of Alloys and Compounds 791, 1241-1247, 2019
Zahteve: National Natural Science Foundation of China
Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode
X Luo, W Song, F Gao, J Shi, C Cheng, J Guo, L He, Q Liu, Y Yang, S Li, ...
Advanced Engineering Materials 23 (6), 2001430, 2021
Zahteve: National Natural Science Foundation of China
Coaxial semipolar InGaN/GaN microwire array LED with substantially suppressed efficiency droop
X Luo, W Song, H Wang, Y Sun, B Zhang, L Wang, J Guo, L He, K Zhang, ...
Journal of Luminescence 221, 117014, 2020
Zahteve: National Natural Science Foundation of China
Improved performance of AlGaN-based near ultraviolet light-emitting diodes with convex quantum barriers
L Wang, G Li, W Song, H Wang, X Luo, Y Sun, B Zhang, J Jiang, S Li
Superlattices and Microstructures 122, 608-613, 2018
Zahteve: National Natural Science Foundation of China
Ambient-temperature diffusion and gettering of Pt atoms in GaN with surface defect region under 60Co gamma or MeV electron irradiation
R Hou, L Li, X Fang, Z Xie, S Li, W Song, R Huang, J Zhang, Z Huang, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2018
Zahteve: National Natural Science Foundation of China
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