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Hossein Aghababa
Hossein Aghababa
Preverjeni e-poštni naslov na ut.ac.ir
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Leto
Quantum division circuit based on restoring division algorithm
A Khosropour, H Aghababa, B Forouzandeh
2011 Eighth International Conference on Information Technology: New …, 2011
147*2011
Bidirectional teleportation of a two-qubit state by using eight-qubit entangled state as a quantum channel
MS Sadeghi Zadeh, M Houshmand, H Aghababa
International Journal of Theoretical Physics 56, 2101-2112, 2017
802017
Enhanced multiparty quantum secret sharing protocol based on quantum secure direct communication and corresponding qubits in noisy environment
M Khorrampanah, M Houshmand, M Sadeghizadeh, H Aghababa, Y Mafi
Optical and Quantum Electronics 54 (12), 832, 2022
50*2022
Asymmetric bidirectional controlled quantum teleportation using eight qubit cluster state
P Kazemikhah, MB Tabalvandani, Y Mafi, H Aghababa
International Journal of Theoretical Physics 61 (2), 17, 2022
462022
Bidirectional quantum teleportation of an arbitrary number of qubits over noisy channel
MS Sadeghi-Zadeh, M Houshmand, H Aghababa, MH Kochakzadeh, ...
Quantum Information Processing 18, 1-19, 2019
422019
Bidirectional Quantum Teleportation of a Class of n-Qubit States by Using (2n + 2)-Qubit Entangled States as Quantum Channel
MSS Zadeh, M Houshmand, H Aghababa
International Journal of Theoretical Physics 57, 175-183, 2018
392018
Bidirectional quantum teleportation of an arbitrary number of qubits over a noisy quantum system using Bell states as quantum channel
Y Mafi, P Kazemikhah, A Ahmadkhaniha, H Aghababa, M Kolahdouz
Optical and Quantum Electronics 54 (9), 568, 2022
332022
Bidirectional quantum teleportation of an arbitrary number of qubits by using four qubit cluster state
P Kazemikhah, H Aghababa
International Journal of Theoretical Physics 60, 378-386, 2021
332021
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems
H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh
IEICE Electronics Express 9 (10), 881-887, 2012
212012
Probability calculation of read failures in nano-scaled SRAM cells under process variations
H Aghababa, B Ebrahimi, A Afzali-Kusha, M Pedram
Microelectronics Reliability 52 (11), 2805-2811, 2012
182012
Statistical estimation of leakage power dissipation in nano-scale complementary metal oxide semiconductor digital circuits using generalised extreme value distribution
H Aghababa, A Khosropour, A Afzali-Kusha, B Forouzandeh, M Pedram
IET circuits, devices & systems 6 (5), 273-278, 2012
15*2012
Asymmetric tridirectional quantum teleportation using seven-qubit cluster states
A Mahjoory, P Kazemikhah, H Aghababa, M Kolahdouz
Physica Scripta 98 (8), 085218, 2023
142023
Enhancing quantum teleportation: an enable-based protocol exploiting distributed quantum gates
A Ahmadkhaniha, Y Mafi, P Kazemikhah, H Aghababa, M Barati, ...
Optical and Quantum Electronics 55 (12), 1079, 2023
132023
4 bit comparator design based on reversible logic gates
S Abbasalizadeh, B Forouzandeh, H Aghababa
Lecture Notes on Information Theory 1 (3), 2013
132013
Efficient controlled quantum broadcast protocol using 6n-qubit cluster state in noisy channels
Y Mafi, P Kazemikhah, A Ahmadkhaniha, H Aghababa, M Kolahdouz
Optical and Quantum Electronics 55 (7), 653, 2023
122023
An improved person re-identification method by light-weight convolutional neural network
SA Sheshkal, K Fouladi-Ghaleh, H Aghababa
2020 10th international conference on computer and knowledge engineering …, 2020
122020
Statistical estimation of delay in nano-scale CMOS circuits using Burr Distribution
A Moshrefi, H Aghababa, O Shoaei
Microelectronics Journal 79, 30-37, 2018
122018
Time-domain analysis of carbon nanotubes
H Aghababa, N Masoumi
2008 12th IEEE Workshop on Signal Propagation on Interconnects, 1-4, 2008
122008
High-performance low-leakage regions of nano-scaled CMOS digital gates under variations of threshold voltage and mobility
H Aghababa, B Forouzandeh, A Afzali-Kusha
Journal of Zhejiang University SCIENCE C 13, 460-471, 2012
112012
Selective boron diffusion without masking layer using boric acid for solar cell emitter formation
P Ebrahimi, M Kolahdouz, M Norouzi, H Aghababa, A Aletayeb, ...
Journal of Materials Science: Materials in Electronics 28, 10794-10798, 2017
102017
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