| Control of quantum-confined stark effect in InGaN-based quantum wells JH Ryou, PD Yoder, J Liu, Z Lochner, H Kim, S Choi, HJ Kim, RD Dupuis IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1080-1091, 2009 | 319 | 2009 |
| Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes HJ Kim, S Choi, SS Kim, JH Ryou, PD Yoder, RD Dupuis, AM Fischer, ... Applied Physics Letters 96 (10), 2010 | 119 | 2010 |
| Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD SC Shen, Y Zhang, D Yoo, JB Limb, JH Ryou, PD Yoder, RD Dupuis IEEE Photonics Technology Letters 19 (21), 1744-1746, 2007 | 108 | 2007 |
| Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, XH Li, M Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 102 (10), 2013 | 98 | 2013 |
| Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 105 (14), 2014 | 97 | 2014 |
| Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers S Choi, MH Ji, J Kim, H Jin Kim, MM Satter, PD Yoder, JH Ryou, ... Applied Physics Letters 101 (16), 2012 | 97 | 2012 |
| A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ... IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994 | 90 | 1994 |
| Ab initio analysis of the electron‐phonon interaction in silicon PD Yoder, VD Natoli, RM Martin Journal of applied physics 73 (9), 4378-4383, 1993 | 66 | 1993 |
| Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ... Applied Physics Letters 106 (4), 2015 | 63 | 2015 |
| A generalized Ramo–Shockley theorem for classical to quantum transport at arbitrary frequencies PD Yoder, K Gärtner, W Fichtner Journal of Applied Physics 79 (4), 1951-1954, 1996 | 62 | 1996 |
| Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition XH Li, S Wang, H Xie, YO Wei, TT Kao, MM Satter, SC Shen, ... physica status solidi (b) 252 (5), 1089-1095, 2015 | 59 | 2015 |
| Negative differential resistance and instabilities in 2-D semiconductors N Balkan, BK Ridley, AJ Vickers Springer Science & Business Media, 2012 | 58 | 2012 |
| Electrothermal analysis of AlGaN/GaN high electron mobility transistors S Sridharan, A Venkatachalam, PD Yoder Journal of Computational Electronics 7, 236-239, 2008 | 52 | 2008 |
| Apparatus for dehydrating oil PD Yoder US Patent 6,224,716, 2001 | 52 | 2001 |
| Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ... Journal of Crystal Growth 414, 76-80, 2015 | 46 | 2015 |
| Monte Carlo simulation of hot electron transport in Si using a unified pseudopotential description of the crystal PD Yoder, JM Higman, J Bude, K Hess Semiconductor Science and Technology 7 (3B), B357, 1992 | 46 | 1992 |
| Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors TT Kao, YS Liu, M Satter, XH Li, Z Lochner, P Douglas Yoder, ... Applied Physics Letters 103 (21), 2013 | 44 | 2013 |
| Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers MM Satter, HJ Kim, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder IEEE Journal of Quantum Electronics 48 (5), 703-711, 2012 | 44 | 2012 |
| Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors T Detchprohm, YS Liu, K Mehta, S Wang, H Xie, TT Kao, SC Shen, ... Applied Physics Letters 110 (1), 2017 | 42 | 2017 |
| Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes RD Dupuis, JH Ryou, SC Shen, PD Yoder, Y Zhang, HJ Kim, S Choi, ... Journal of Crystal Growth 310 (23), 5217-5222, 2008 | 42 | 2008 |
Shyh-Chiang ShenProfessor, Electrical and Computer Engineering, Georgia Institute of TechnologyPreverjeni e-poštni naslov na ece.gatech.edu