Spremljaj
Amit Gahoi
Naslov
Navedeno
Navedeno
Leto
Residual metallic contamination of transferred chemical vapor deposited graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS nano 9 (5), 4776-4785, 2015
3272015
Electrical properties of graphene-metal contacts
T Cusati, G Fiori, A Gahoi, V Passi, MC Lemme, A Fortunelli, ...
Scientific reports 7 (1), 5109, 2017
2002017
Chemical vapor deposited graphene: From synthesis to applications
S Kataria, S Wagner, J Ruhkopf, A Gahoi, H Pandey, R Bornemann, ...
physica status solidi (a) 211 (11), 2439-2449, 2014
1252014
Contact resistance study of various metal electrodes with CVD graphene
A Gahoi, S Wagner, A Bablich, S Kataria, V Passi, MC Lemme
Solid-State Electronics 125, 234-239, 2016
782016
Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons
V Passi, A Gahoi, BV Senkovskiy, D Haberer, FR Fischer, A Grüneis, ...
ACS applied materials & interfaces 10 (12), 9900-9903, 2018
552018
Ultralow specific contact resistivity in metal–graphene junctions via contact engineering
V Passi, A Gahoi, EG Marin, T Cusati, A Fortunelli, G Iannaccone, G Fiori, ...
Advanced Materials Interfaces 6 (1), 1801285, 2019
542019
On the adequacy of the transmission line model to describe the graphene–metal contact resistance
S Venica, F Driussi, A Gahoi, P Palestri, MC Lemme, L Selmi
IEEE Transactions on Electron Devices 65 (4), 1589-1596, 2018
332018
Dependable contact related parameter extraction in graphene–metal junctions
A Gahoi, S Kataria, F Driussi, S Venica, H Pandey, D Esseni, L Selmi, ...
Advanced Electronic Materials 6 (10), 2000386, 2020
272020
Dielectric surface charge engineering for electrostatic doping of graphene
S Wittmann, F Aumer, D Wittmann, S Pindl, S Wagner, A Gahoi, E Reato, ...
ACS Applied Electronic Materials 2 (5), 1235-1242, 2020
212020
Contact resistance Study of “edge-contacted” metal-graphene interfaces
V Passi, A Gahoi, J Ruhkopf, S Kataria, F Vaurette, E Pallecchi, H Happy, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 236-239, 2016
172016
Systematic comparison of metal contacts on CVD graphene
A Gahoi, V Passi, S Kataria, S Wagner, A Bablich, MC Lemme
2015 45th European Solid State Device Research Conference (ESSDERC), 184-187, 2015
152015
Improved understanding of metal–graphene contacts
F Driussi, S Venica, A Gahoi, A Gambi, P Giannozzi, S Kataria, ...
Microelectronic Engineering 216, 111035, 2019
142019
Dependability assessment of transfer length method to extract the metal–graphene contact resistance
F Driussi, S Venica, A Gahoi, S Kataria, MC Lemme, P Palestri
IEEE Transactions on Semiconductor Manufacturing 33 (2), 210-215, 2020
132020
Accurate graphene-metal junction characterization
M König, G Ruhl, A Gahoi, S Wittmann, T Preis, JM Batke, I Costina, ...
IEEE Journal of the Electron Devices Society 7, 219-226, 2019
132019
Detailed characterization and critical discussion of series resistance in graphene-metal contacts
S Venica, F Driussi, A Gahoi, V Passi, P Palestri, MC Lemme, L Selmi
2017 International Conference of Microelectronic Test Structures (ICMTS), 1-5, 2017
92017
Understanding the nature of metal-graphene contacts: A theoretical and experimental study
T Cusati, G Fiori, A Gahoi, V Passi, A Fortunelli, M Lemme, G Iannaccone
2015 IEEE International Electron Devices Meeting (IEDM), 12.7. 1-12.7. 4, 2015
92015
PECVD Al2O3/a‐Si:B as a dopant source and surface passivation
J Seiffe, A Gahoi, M Hofmann, J Rentsch, R Preu
physica status solidi (a) 210 (8), 1593-1599, 2013
82013
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method
S Venica, F Driussi, A Gahoi, S Kataria, P Palestri, MC Lenirne, L Scimi
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018
72018
High voltage gain inverters from artificially stacked bilayer CVD graphene FETs
H Pandey, S Kataria, A Gahoi, MC Lemme
IEEE Electron Device Letters 38 (12), 1747-1750, 2017
72017
DFT study of graphene doping due to metal contacts
P Khakbaz, F Driussi, A Gambi, P Giannozzi, S Venica, D Esseni, A Gaho, ...
2019 International Conference on Simulation of Semiconductor Processes and …, 2019
62019
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