| MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap HS Lee, SW Min, YG Chang, MK Park, T Nam, H Kim, JH Kim, S Ryu, S Im Nano letters 12 (7), 3695-3700, 2012 | 1535 | 2012 |
| Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition BJ Jin, S Im, SY Lee Thin solid films 366 (1-2), 107-110, 2000 | 701 | 2000 |
| Improving the gate stability of ZnO thin-film transistors with aluminum oxide dielectric layers MS Oh, K Lee, JH Song, BH Lee, MM Sung, DK Hwang, S Im Journal of the Electrochemical Society 155 (12), H1009, 2008 | 675 | 2008 |
| 42.3: Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM‐OLED display SHK Park, M Ryu, CS Hwang, S Yang, C Byun, JI Lee, J Shin, SM Yoon, ... SID Symposium Digest of Technical Papers 39 (1), 629-632, 2008 | 668 | 2008 |
| Ultraviolet-enhanced photodiode employing structure IS Jeong, JH Kim, S Im Applied physics letters 83 (14), 2946-2948, 2003 | 492 | 2003 |
| Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition BJ Jin, SH Bae, SY Lee, S Im Materials Science and Engineering: B 71 (1-3), 301-305, 2000 | 466 | 2000 |
| Transparent and photo‐stable ZnO thin‐film transistors to drive an active matrix organic‐light‐emitting‐diode display panel SHK Park, CS Hwang, M Ryu, S Yang, C Byun, J Shin, JI Lee, K Lee, ... Advanced Materials 21 (6), 678-682, 2009 | 388 | 2009 |
| Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe2/MoS2 Dichalcogenide Heterojunction A Pezeshki, SHH Shokouh, T Nazari, K Oh, S Im Advanced Materials 28 (16), 3216-3222, 2016 | 276 | 2016 |
| MoS2 nanosheets for top-gate nonvolatile memory transistor channel HS Lee, SW Min, MK Park, YT Lee, PJ Jeon, JH Kim, S Ryu, S Im Small 8 (20), 3111-3115, 2012 | 270 | 2012 |
| Optimizing n-ZnO/p-Si heterojunctions for photodiode applications JY Lee, YS Choi, JH Kim, MO Park, S Im Thin solid films 403, 553-557, 2002 | 257 | 2002 |
| Photodetecting properties of ZnO-based thin-film transistors HS Bae, MH Yoon, JH Kim, S Im Applied Physics Letters 83 (25), 5313-5315, 2003 | 243 | 2003 |
| Hysteresis mechanisms of pentacene thin-film transistors with polymer/oxide bilayer gate dielectrics DK Hwang, MS Oh, JM Hwang, JH Kim, S Im Applied Physics Letters 92 (1), 2008 | 171 | 2008 |
| Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors DK Hwang, K Lee, JH Kim, S Im, JH Park, E Kim Applied physics letters 89 (9), 2006 | 168 | 2006 |
| Black phosphorus–zinc oxide nanomaterial heterojunction for p–n diode and junction field-effect transistor PJ Jeon, YT Lee, JY Lim, JS Kim, DK Hwang, S Im Nano letters 16 (2), 1293-1298, 2016 | 166 | 2016 |
| Optical and luminescence characteristics of thermally evaporated pentacene films on Si SP Park, SS Kim, JH Kim, CN Whang, S Im Applied physics letters 80 (16), 2872-2874, 2002 | 161 | 2002 |
| Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain DK Hwang, YT Lee, HS Lee, YJ Lee, SH Shokouh, J Kyhm, J Lee, HH Kim, ... NPG Asia Materials 8 (1), e233-e233, 2016 | 157 | 2016 |
| Nonvolatile ferroelectric memory circuit using black phosphorus nanosheet-based field-effect transistors with P (VDF-TrFE) polymer YT Lee, H Kwon, JS Kim, HH Kim, YJ Lee, JA Lim, YW Song, Y Yi, ... Acs Nano 9 (10), 10394-10401, 2015 | 155 | 2015 |
| Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits PJ Jeon, JS Kim, JY Lim, Y Cho, A Pezeshki, HS Lee, S Yu, SW Min, S Im ACS applied materials & interfaces 7 (40), 22333-22340, 2015 | 150 | 2015 |
| Ultraviolet enhanced Si-photodetector using p-NiO films JM Choi, S Im Applied Surface Science 244 (1-4), 435-438, 2005 | 147 | 2005 |
| Rapid vapor-phase fabrication of organic− inorganic hybrid superlattices with monolayer precision BH Lee, MK Ryu, SY Choi, KH Lee, S Im, MM Sung Journal of the American Chemical Society 129 (51), 16034-16041, 2007 | 142 | 2007 |
Do Kyung HwangPrincipal Research Scientist, Korea Institute of Science and Technology (KIST)Preverjeni e-poštni naslov na kist.re.kr
