Članki z zahtevami za javni dostop - Seongil ImVeč o tem
Ni na voljo nikjer: 2
Compact IV model for ambipolar field-effect transistors with 2D transition metal dichalcogenide as semiconductor
L Deng, J Li, Q Liu, H Huang, J Wang, D Cheng, H Wen, S Im
IEEE Transactions on Nanotechnology 19, 841-848, 2020
Zahteve: National Natural Science Foundation of China
Explicit continuous IV model for 2D transition metal dichalcogenide field-effect transistors
LF Deng, CM Si, HQ Huang, J Wang, H Wen, S Im
Microelectronics Journal 88, 61-66, 2019
Zahteve: National Natural Science Foundation of China
Na voljo nekje: 4
Van der Waals junction field effect transistors with both n-and p-channel transition metal dichalcogenides
JY Lim, M Kim, Y Jeong, KR Ko, S Yu, HG Shin, JY Moon, YJ Choi, Y Yi, ...
npj 2D Materials and Applications 2 (1), 37, 2018
Zahteve: Fundação para a Ciência e a Tecnologia, Portugal
Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes
H Kwon, S Garg, JH Park, Y Jeong, S Yu, SM Kim, P Kung, S Im
npj 2D Materials and Applications 3 (1), 9, 2019
Zahteve: US National Science Foundation, Fundação para a Ciência e a Tecnologia, Portugal
Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection
HS Lee, JY Lim, S Yu, Y Jeong, S Park, K Oh, S Hong, S Yang, CH Lee, ...
Advanced Optical Materials 7 (19), 1900768, 2019
Zahteve: US Department of Defense
Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions
Y Jeong, HJ Lee, J Park, S Lee, HJ Jin, S Park, H Cho, S Hong, T Kim, ...
npj 2D Materials and Applications 6 (1), 23, 2022
Zahteve: Fundação para a Ciência e a Tecnologia, Portugal
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