Gunther Lippert

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Jaroslaw DabrowskiIHPPreverjeni e-poštni naslov na ihp-microelectronics.com
Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinPreverjeni e-poštni naslov na ikz-berlin.de
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsPreverjeni e-poštni naslov na ihp-microelectronics.com
Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHPreverjeni e-poštni naslov na eld.rwth-aachen.de
Holger RückerIHP, Innovations for High Performance MicroelelectronicsPreverjeni e-poštni naslov na ihp-microelectronics.com
Mikael ÖstlingKTH Royal Institute of TechnologyPreverjeni e-poštni naslov na kth.se
Anil ManeArgonne National LaboratoryPreverjeni e-poštni naslov na anl.gov
Sam VaziriStanford UniversityPreverjeni e-poštni naslov na stanford.edu
Mindaugas LukosiusIHPPreverjeni e-poštni naslov na ihp-microelectronics.com
Yuji YamamotoIHPPreverjeni e-poštni naslov na ihp-microelectronics.com
Anderson David SmithAssociate Professor, Chalmers University of TechnologyPreverjeni e-poštni naslov na kth.se
Jens BaringhausLeibniz Universität Hannover, Institut für FestkörperphysikPreverjeni e-poštni naslov na fkp.uni-hannover.de
Jose AvilaSynchrotron SOLEILPreverjeni e-poštni naslov na synchrotron-soleil.fr
J. Christoph ScheyttPaderborn UniversityPreverjeni e-poštni naslov na hni.uni-paderborn.de
Marco LiskerIHPPreverjeni e-poštni naslov na ihp-microelectronics.com
Maria C. AsensioProfessor, at Materials Science Institute of Madrid (ICMM) of the CSICPreverjeni e-poštni naslov na csic.es
Melkamu BeleteResearch Scientist at RWTH Aachen University, Faculty of Electrical Engineering and InfoPreverjeni e-poštni naslov na eld.rwth-aachen.de
Francesco DriussiUniversità degli Studi di UdinePreverjeni e-poštni naslov na uniud.it
Vincenzo Di LeccePolitecnico di BariPreverjeni e-poštni naslov na poliba.it
Ya-Hong XieUniversity of California Los Angeles, Materials Sciences & EngineeringPreverjeni e-poštni naslov na ucla.edu

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Gunther Lippert

limited access caused by retirement, Frankfurt (Oder) Germany

Preverjeni e-poštni naslov na ihp-microelectronics.com

graphene MBE HBT SiGe:C hBN


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ... Nano letters 13 (4), 1435-1439, 2013	286	2013
Vertical Graphene Base Transistor W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ... Electron Device Letters, IEEE 33 (5), 691-693, 2012	188	2012
Suppressed diffusion of boron and carbon in carbon-rich silicon H Rücker, B Heinemann, W Röpke, R Kurps, D Krüger, G Lippert, ... Applied Physics Letters 73 (12), 1682-1684, 1998	181	1998
Surfactant-controlled solid phase epitaxy of germanium on silicon HJ Osten, J Klatt, G Lippert, B Dietrich, E Bugiel Physical review letters 69 (3), 450, 1992	118	1992
Titanium-added praseodymium silicate high-k layers on Si (001) T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ... Applied Physics Letters 87 (2), 2005	86	2005
On the single-chip implementation of a Hiperlan/2 and IEEE 802.11 a capable modem E Grass, K Tittelbach-Helmrich, U Jagdhold, A Troya, G Lippert, O Kruger, ... IEEE Personal Communications 8 (6), 48-57, 2001	86	2001
Measurement of stress and relaxation in Si_1−xGe_x layers by Raman line shift and x‐ray diffraction B Dietrich, E Bugiel, J Klatt, G Lippert, T Morgenstern, HJ Osten, ... Journal of applied physics 74 (5), 3177-3180, 1993	86	1993
Direct graphene growth on insulator G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina physica status solidi (b) 248 (11), 2619-2622, 2011	82	2011
Graphene grown on Ge (0 0 1) from atomic source G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ... Carbon 75, 104-112, 2014	79	2014
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ... ACS applied materials & interfaces 8 (49), 33786-33793, 2016	76	2016
Surfactant‐mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te HJ Osten, J Klatt, G Lippert, E Bugiel, S Higuchi Journal of applied physics 74 (4), 2507-2511, 1993	75	1993
Observation of the formation of a carbon-rich surface layer in silicon HJ Osten, M Methfessel, G Lippert, H Rücker Physical Review B 52 (16), 12179, 1995	71	1995
First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics C Wenger, J Dąbrowski, P Zaumseil, R Sorge, P Formanek, G Lippert, ... Materials science in semiconductor processing 7 (4-6), 227-230, 2004	61	2004
The influence of surfactants on growth modes in molecular‐beam epitaxy: the growth of germanium layers on Si (100) HJ Osten, G Lippert, J Klatt Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992	60	1992
Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications G Lupina, G Kozłowski, J Dabrowski, C Wenger, P Dudek, P Zaumseil, ... Applied Physics Letters 92 (6), 2008	58	2008
Structure and strain relaxation mechanisms of ultrathin epitaxial Pr2O3 films on Si (111) T Schroeder, TL Lee, L Libralesso, I Joumard, J Zegenhagen, P Zaumseil, ... Journal of applied physics 97 (7), 2005	56	2005
Two‐dimensional lattice‐mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant HJ Osten, J Klatt, G Lippert, E Bugiel, S Hinrich Applied physics letters 60 (20), 2522-2524, 1992	56	1992
The impact of supersaturated carbon on transient enhanced diffusion H Rücker, B Heinemann, D Bolze, R Kurps, D Krüger, G Lippert, HJ Osten Applied physics letters 74 (22), 3377-3379, 1999	55	1999
Understanding the growth mechanism of graphene on Ge/Si (001) surfaces J Dabrowski, G Lippert, J Avila, J Baringhaus, I Colambo, YS Dedkov, ... Scientific reports 6 (1), 31639, 2016	52	2016
Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices HJ Osten, B Heinemann, D Knoll, G Lippert, H Rücker Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998	52	1998

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