| Deformation potentials and electron-phonon scattering: Two new theorems FS Khan, PB Allen Physical Review B 29 (6), 3341, 1984 | 137 | 1984 |
| Dc transport in metals PB Allen, TP Beaulac, FS Khan, WH Butler, FJ Pinski, JC Swihart Physical Review B 34 (6), 4331, 1986 | 131 | 1986 |
| Extended Si| P [311| P] defects J Kim, JW Wilkins, FS Khan, A Canning Physical Review B 55 (24), 16186, 1997 | 129 | 1997 |
| Stability of si-interstitial defects: From point to extended defects J Kim, F Kirchhoff, JW Wilkins, FS Khan Physical Review Letters 84 (3), 503, 2000 | 124 | 2000 |
| Simulation of silicon clusters and surfaces via tight-binding molecular dynamics FS Khan, JQ Broughton Physical Review B 39 (6), 3688, 1989 | 120 | 1989 |
| Quantum transport equations for high electric fields FS Khan, JH Davies, JW Wilkins Physical Review B 36 (5), 2578, 1987 | 113 | 1987 |
| Dynamical properties of Au from tight-binding molecular-dynamics simulations F Kirchhoff, MJ Mehl, NI Papanicolaou, DA Papaconstantopoulos, ... Physical Review B 63 (19), 195101, 2001 | 98 | 2001 |
| Thermally activated reorientation of di-interstitial defects in silicon J Kim, F Kirchhoff, WG Aulbur, JW Wilkins, FS Khan, G Kresse Physical review letters 83 (10), 1990, 1999 | 84 | 1999 |
| Relaxation of icosahedral-cage silicon clusters via tight-binding molecular dynamics FS Khan, JQ Broughton Physical Review B 43 (14), 11754, 1991 | 75 | 1991 |
| High-field transport in semiconductors. II. Collision duration time P Lipavský, FS Khan, A Kalvová, JW Wilkins Physical Review B 43 (8), 6650, 1991 | 57 | 1991 |
| Surface phonons of the Si (111)-7× 7 reconstructed surface J Kim, ML Yeh, FS Khan, JW Wilkins Physical Review B 52 (20), 14709, 1995 | 54 | 1995 |
| High-field transport in semiconductors. I. Absence of the intra-collisional-field effect P Lipavský, FS Khan, F Abdolsalami, JW Wilkins Physical Review B 43 (6), 4885, 1991 | 41 | 1991 |
| Quantum corrections to the Boltzmann equation for transport in semiconductors in high electric fields SK Sarker, JH Davies, FS Khan, JW Wilkins Physical Review B 33 (10), 7263, 1986 | 33 | 1986 |
| Accuracy of time-dependent properties in electronic-structure calculations using a fictitious Lagrangian J Broughton, F Khan Physical Review B 40 (18), 12098, 1989 | 29 | 1989 |
| Sound attenuation by electrons in metals FS Khan, PB Allen Physical Review B 35 (3), 1002, 1987 | 26 | 1987 |
| Electron-phonon effects in copper. I. Electron scattering rate and mass enhancement FS Khan, PB Allen, WH Butler, FJ Pinski Physical Review B 26 (4), 1538, 1982 | 18 | 1982 |
| Numerical test of approximate theories of the superconducting transition temperature FS Khan, PB Allen Solid State Communications 36 (6), 481-484, 1980 | 17 | 1980 |
| High-field transport in semiconductors. III. Wave-function renormalization P Lipavský, FS Khan, JW Wilkins Physical Review B 43 (8), 6665, 1991 | 16 | 1991 |
| Intracollisional field effect in the high-field regime of the quantum transport equation using Monte Carlo simulations F Abdolsalami, FS Khan Physical Review B 41 (6), 3494, 1990 | 13 | 1990 |
| Temperature Dependence of the Elastic Constants of p+ Silicon FS Khan, PB Allen physica status solidi (b) 128 (1), 31-38, 1985 | 10 | 1985 |
