| Frequency-and power-dependent photoresponse of a perovskite photodetector down to the single-photon level Z Xu, Y Yu, S Arya, IA Niaz, Y Chen, Y Lei, MAR Miah, J Zhou, AC Zhang, ... Nano Letters 20 (3), 2144-2151, 2020 | 28 | 2020 |
| Cycling excitation process: An ultra efficient and quiet signal amplification mechanism in semiconductor YH Liu, L Yan, AC Zhang, D Hall, IA Niaz, Y Zhou, LJ Sham, YH Lo Applied Physics Letters 107 (5), 2015 | 20 | 2015 |
| An amorphous silicon photodiode with 2 THz gain‐bandwidth product based on cycling excitation process L Yan, Y Yu, AC Zhang, D Hall, IA Niaz, MA Raihan Miah, YH Liu, YH Lo Applied Physics Letters 111 (10), 2017 | 19 | 2017 |
| Room-temperature long-wave infrared detector with thin double layers of amorphous germanium and amorphous silicon J Zhou, MA Raihan Miah, Y Yu, AC Zhang, Z Zeng, S Damle, IA Niaz, ... Optics Express 27 (25), 37056-37064, 2019 | 13 | 2019 |
| Transient Induced Molecular Electronic Spectroscopy (TIMES) for study of protein-ligand interactions T Zhang, TH Ku, Y Han, R Subramanian, IA Niaz, H Luo, D Chang, ... Scientific Reports 6 (1), 35570, 2016 | 13 | 2016 |
| Modeling gain mechanisms in amorphous silicon due to efficient carrier multiplication and trap-induced junction modulation IA Niaz, MAR Miah, L Yan, Y Yu, ZY He, Y Zhang, AC Zhang, J Zhou, ... Journal of Lightwave Technology 37 (19), 5056-5066, 2019 | 6 | 2019 |
| Cycling excitation process for light detection and signal amplification in semiconductors YH Liu, A Zhang, MAR Miah, D Hall, IA Niaz, L Yan, Y Yu, MS Kavrik, ... Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and …, 2016 | 6 | 2016 |
| Defect assisted carrier multiplication in amorphous silicon MAR Miah, IA Niaz, YH Lo IEEE Journal of Quantum Electronics 56 (3), 1-11, 2020 | 5 | 2020 |
| ECS Transactions R Chowdhurya, M Kabirb, R Manleyc, K Hirschman ECS Transactions 92, 135, 2019 | 5 | 2019 |
| A high-efficiency low-noise signal amplification mechanism for photodetectors MAR Miah, IA Niaz, YH Liu, D Hall, YH Lo Silicon Photonics XII 10108, 155-162, 2017 | 4 | 2017 |
| Discovery of ionic impact ionization (I3) in perovskites triggered by a single photon Z Xu, Y Yu, IA Niaz, Y Chen, S Arya, Y Lei, MAR Miah, J Zhou, AC Zhang, ... arXiv preprint arXiv:1906.02475, 2019 | 3 | 2019 |
| InxGa1−xSb MOSFET: Performance analysis by self consistent CV characterization and direct tunneling gate leakage current MH Alam, IA Niaz, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru 2012 IEEE International Conference on Electro/Information Technology, 1-6, 2012 | 3 | 2012 |
| Performance analysis of InAs/AlSb MOS-HEMT by self-consistent capacitance-voltage characterization and direct tunneling gate leakage current I Ahmed, S Chowdhury, MH Alam, IA Niaz, QDM Khosru ECS Transactions 72 (2), 189, 2016 | 2 | 2016 |
| Modeling and Characterization of Efficient Carrier Multiplication in Highly Co-doped Semiconductors and Disordered Materials IA Niaz University of California, San Diego, 2019 | | 2019 |
| Low Noise, High Gain-Bandwidth Photodetectors Using Cycling Exciting Process (CEP) as Amplification Mechanism L Yan, Y Yu, Z Xu, I Niaz, MAR Miah, AC Zhang, J Zhou, Y Lo 2018 IEEE International Conference on Electron Devices and Solid State …, 2018 | | 2018 |
| An ultra-efficient internal mechanism to amplify photoresponse for Si and compound semiconductor devices YH Liu, L Yan, A Zhang, D Hall, IA Niaz, MS Kavrik, YH Lo 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 17-18, 2016 | | 2016 |
| A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect N Chowdhury, I Ahmed, Z Al Azim, MH Alam, IA Niaz, QDM Khosru ECS Transactions 58 (16), 9, 2014 | | 2014 |
| Physical/process parameter dependence of gate capacitance and ballistic performance of InAsySb1−yQuantum Well Field Effect Transistors IA Niaz, MH Alam, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru 2013 IEEE 5th International Nanoelectronics Conference (INEC), 389-392, 2013 | | 2013 |
| Self consistent simulation of CV characterization and ballistic performance of double gate SOI flexible-FET incorporating QM effects Z Al Azim, N Chowdhury, IA Niaz, MH Alam, I Ahmed, DM Quazi 2012 IEEE International Conference on Electronics Design, Systems and …, 2012 | | 2012 |
| Self-consistent CV characterization of depletion mode buried channel InGaAs/InAs Quantum Well FET incorporating strain effects I Ahmed, IA Niaz, MH Alam, N Chowdhury, Z Al Azim, QDM Khosru 2012 IEEE International Conference on Electronics Design, Systems and …, 2012 | | 2012 |
Md Hasibul AlamIntel CorporationPreverjeni e-poštni naslov na utexas.edu