Xiao Shen

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Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityPreverjeni e-poštni naslov na vanderbilt.edu
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityPreverjeni e-poštni naslov na vanderbilt.edu
Enxia ZhangUniversity of Central FloridaPreverjeni e-poštni naslov na ucf.edu
Yevgeniy PuzyrevData & Applied Scientist, MicrosoftPreverjeni e-poštni naslov na microsoft.com
Professor Sanjay R MishraPhysics and Materials Science, The University of Memphis, Memphis, TN 38152 USAPreverjeni e-poštni naslov na memphis.edu
Sarit DharProfessor of Physics, Auburn UniversityPreverjeni e-poštni naslov na auburn.edu
Philip AllenProfessor Emeritus, Physics, Stony Brook UniversityPreverjeni e-poštni naslov na stonybrook.edu
blair tuttlePenn State Erie; The Behrend CollegePreverjeni e-poštni naslov na psu.edu
Jim SpeckProfessor of Materials, UCSBPreverjeni e-poštni naslov na ucsb.edu
Ram K. GuptaPittsburg State UniversityPreverjeni e-poštni naslov na pittstate.edu
Jingbiao CuiUniversity of North TexasPreverjeni e-poštni naslov na unt.edu
Rong JiangVanderbilt UniversityPreverjeni e-poštni naslov na vanderbilt.edu
Tania RoyDuke UniversityPreverjeni e-poštni naslov na duke.edu
Robert A ReedVanderbilt UniversityPreverjeni e-poštni naslov na vanderbilt.edu
Janet E. MacdonaldAssociate Professor of Chemistry, Vanderbilt UniversityPreverjeni e-poštni naslov na vanderbilt.edu
Mark S HybertsenSenior Physicist, Emeritus, Center for Functional Nanomaterials, Brookhaven National LaboratoryPreverjeni e-poštni naslov na bnl.gov
Jin-Cheng ZhengXiamen University and Xiamen University Malaysia (previously NUS, Cambridge, BNL)Preverjeni e-poštni naslov na xmu.edu.cn
Leonard FeldmanProfessor of Physics and Materials SciencePreverjeni e-poštni naslov na rutgers.edu
John RozenIBM TJ Watson Research CenterPreverjeni e-poštni naslov na us.ibm.com
Ayayi Claude AhyiAuburn UniversityPreverjeni e-poštni naslov na auburn.edu

Spremljaj

Xiao Shen

Associate Professor of Physics, University of Memphis

Preverjeni e-poštni naslov na memphis.edu - Domača stran

Computational Condensed Matter Physics


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Size- and Shape-Controlled Synthesis and Properties of Magnetic-Plasmonic Core-Shell Nanoparticles E Kwizera, E Chaffin, X Shen, J Chen, Q Zou, Z Wu, Z Gai, S Bhana, ... Journal of Physical Chemistry C, 2016	125	2016
Nanostructured cobalt oxide and cobalt sulfide for flexible, high performance and durable supercapacitors S Aloqayli, CK Ranaweera, Z Wang, K Siam, PK Kahol, P Tripathi, ... Energy Storage Materials 8, 68-76, 2017	116	2017
Photocatalytic water oxidation at the GaN (101̅0)− water interface X Shen, YA Small, J Wang, PB Allen, MV Fernandez-Serra, MS Hybertsen, ... The Journal of Physical Chemistry C 114 (32), 13695-13704, 2010	109	2010
Wire versus tube: stability of small one-dimensional ZnO nanostructures X Shen, PB Allen, JT Muckerman, JW Davenport, JC Zheng Nano Letters 7 (8), 2267-2271, 2007	100	2007
Identification of a major cause of endemically poor mobilities in SiC/SiO2 structures X Shen, ST Pantelides Applied Physics Letters 98 (5), 053507-053507-3, 2011	95	2011
Phosphorous passivation of the SiO2/4H–SiC interface YK Sharma, AC Ahyi, T Issacs-Smith, X Shen, ST Pantelides, X Zhu, ... Solid-State Electronics 68, 103-107, 2012	86	2012
Water adsorption on the GaN (101̅0) nonpolar surface X Shen, PB Allen, MS Hybertsen, JT Muckerman Journal of Physical Chemistry C 113 (9), 3365-3368, 2009	70	2009
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ... Applied Physics Letters 99 (20), 203501, 2011	67	2011
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ... IEEE Transactions on Device and Materials Reliability, 2018	64	2018
Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases S Xu, X Shen, KA Hallman, RF Haglund Jr., ST Pantelides Physical Review B 95, 125105, 2017	60	2017
Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN high electron mobility transistors R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ... IEEE Transactions on Nuclear Science 64, 218, 2016	58	2016
Defect Luminescence from Wurtzite CuInS2 Nanocrystals: Combined Experimental and Theoretical Analysis A Leach, X Shen, A Faust, M Cleveland, A La Croix, U Banin, ... Journal of Physical Chemistry C 120, 5207, 2016	57	2016
Origins of low-frequency noise and interface traps in 4H-SiC MOSFETs CX Zhang, EX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ... IEEE Electron Device Letters 34 (1), 117-119, 2012	53	2012
Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices CX Zhang, EX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ... IEEE Transactions on Nuclear Science 58 (6), 2925-2929, 2011	53	2011
Phonon quasiparticles and anharmonic perturbation theory tested by molecular dynamics on a model system T Sun, X Shen, PB Allen Physical Review B 82 (22), 224304, 2010	53	2010
Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures X Shen, EX Zhang, CX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, ... Applied Physics Letters 98 (6), 063507, 2011	48	2011
Excess carbon in silicon carbide X Shen, MP Oxley, Y Puzyrev, BR Tuttle, G Duscher, ST Pantelides Journal of Applied Physics 108 (12), 123705, 2010	47	2010
Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs CX Zhang, X Shen, EX Zhang, DM Fleetwood, RD Schrimpf, SA Francis, ... IEEE Transactions on Electron Devices 60 (7), 2361-2367, 2013	45	2013
Bias-temperature instabilities in 4H-SiC metal–oxide–semiconductor capacitors EX Zhang, CX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ... IEEE Transactions on Device and Materials Reliability 12 (2), 391-398, 2012	45	2012
Interlaced crystals having a perfect Bravais lattice and complex chemical order revealed by real-space crystallography X Shen, EA Hernández-Pagan, W Zhou, YS Puzyrev, JC Idrobo, ... Nature communications 5, 5431, 2014	42	2014

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