| A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor E Rahman, A Shadman, I Ahmed, SUZ Khan, QDM Khosru Nanotechnology 29 (23), 235203, 2018 | 23 | 2018 |
| Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform I Ahmed, U Rawat, JT Chen, D Weinstein IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 70 …, 2022 | 15 | 2022 |
| A low subthreshold swing tunneling field effect transistor for next generation low power CMOS applications N Chowdhury, I Ahmed, T Fakhrul, MK Alam, QDM Khosru Physica E: Low-dimensional Systems and Nanostructures 74, 251-257, 2015 | 12 | 2015 |
| Gan-on-sic surface acoustic wave devices up to 14.3 Ghz I Ahmed, U Rawat, JT Chen, D Weinstein 2022 IEEE 35th International Conference on Micro Electro Mechanical Systems …, 2022 | 6 | 2022 |
| Physically based analytical modeling of 2D electrostatic potential for symmetric and asymmetric double gate junctionless field effect transistors in subthreshold region I Ahmed, QDM Khosru ECS Transactions 69 (5), 249, 2015 | 5 | 2015 |
| Switchable transduction in GaN MEMS with off-state shunt I Ahmed, D Weinstein 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems …, 2021 | 4 | 2021 |
| Switchable transducers in GaN MEMS resonators: Performance comparison and analysis I Ahmed, D Weinstein Micromachines 12 (4), 461, 2021 | 3 | 2021 |
| InxGa1−xSb MOSFET: Performance analysis by self consistent CV characterization and direct tunneling gate leakage current MH Alam, IA Niaz, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru 2012 IEEE International Conference on Electro/Information Technology, 1-6, 2012 | 3 | 2012 |
| Performance analysis of InAs/AlSb MOS-HEMT by self-consistent capacitance-voltage characterization and direct tunneling gate leakage current I Ahmed, S Chowdhury, MH Alam, IA Niaz, QDM Khosru ECS Transactions 72 (2), 189, 2016 | 2 | 2016 |
| Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ I Ahmed, JT Chen, D Weinstein 2024 IEEE 37th International Conference on Micro Electro Mechanical Systems …, 2024 | | 2024 |
| Switchable and Tunable MEMS Devices in GaN MMIC Technology I Ahmed Purdue University Graduate School, 2023 | | 2023 |
| Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis. Micromachines 2021, 12, 461 I Ahmed, D Weinstein s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021 | | 2021 |
| A Comprehensive Analytical Study of Subthreshold Swing for Cylindrical Gate-All-Around Junctionless Field Effect Transistor I Ahmed, QDM Khosru ECS Transactions 72 (2), 109, 2016 | | 2016 |
| A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect N Chowdhury, I Ahmed, Z Al Azim, MH Alam, IA Niaz, QDM Khosru ECS Transactions 58 (16), 9, 2014 | | 2014 |
| Physical/process parameter dependence of gate capacitance and ballistic performance of InAsySb1−yQuantum Well Field Effect Transistors IA Niaz, MH Alam, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru 2013 IEEE 5th International Nanoelectronics Conference (INEC), 389-392, 2013 | | 2013 |
| Self-Consistent CV Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects I Ahmed, IA Niaz, M Hasibul, N Chowdhury, Z Al Azim, QD Mohd Khosru Electronics Design, Systems and Applications (ICEDSA), 2012 IEEE …, 2012 | | 2012 |
| Self consistent simulation of CV characterization and ballistic performance of double gate SOI flexible-FET incorporating QM effects Z Al Azim, N Chowdhury, IA Niaz, MH Alam, I Ahmed, DM Quazi 2012 IEEE International Conference on Electronics Design, Systems and …, 2012 | | 2012 |
| A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET N Chowdhury, Z Al Azim, I Ahmed, IA Niaz, MH Alam, QDM Khosru 2012 IEEE International Conference on Electro/Information Technology, 1-4, 2012 | | 2012 |
Quazi D. M. KhosruBangladesh University of Engineering and TechnologyPreverjeni e-poštni naslov na eee.buet.ac.bd
