| Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ... Microelectronic Engineering 187, 66-77, 2018 | 510 | 2018 |
| Voids in silicon by He implantation: From basic to applications V Raineri, M Saggio, E Rimini Journal of Materials Research 15 (7), 1449-1477, 2000 | 194 | 2000 |
| Recent advances on dielectrics technology for SiC and GaN power devices F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ... Applied Surface Science 301, 9-18, 2014 | 193 | 2014 |
| Challenges for energy efficient wide band gap semiconductor power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ... physica status solidi (a) 211 (9), 2063-2071, 2014 | 151 | 2014 |
| MDmesh/sup TM: innovative technology for high voltage Power MOSFETs M Saggio, D Fagone, S Musumeci 12th International Symposium on Power Semiconductor Devices & ICs …, 2000 | 117 | 2000 |
| Innovative localized lifetime control in high-speed IGBTs M Saggio, V Raineri, R Letor, F Frisina IEEE Electron Device Letters 18 (7), 333-335, 1997 | 113 | 1997 |
| Critical issues for interfaces to p-type SiC and GaN in power devices F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, RL Nigro, ... Applied Surface Science 258 (21), 8324-8333, 2012 | 75 | 2012 |
| Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors P Fiorenza, A Frazzetto, A Guarnera, M Saggio, F Roccaforte Applied Physics Letters 105 (14), 2014 | 69 | 2014 |
| Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC M Vivona, G Greco, F Giannazzo, RL Nigro, S Rascunà, M Saggio, ... Semiconductor Science and Technology 29 (7), 075018, 2014 | 63 | 2014 |
| Materials issues and device performances for light emitting Er-implanted Si S Coffa, F Priolo, G Franzo, A Polman, S Libertino, M Saggio, A Carnera Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 41* | 1995 |
| Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, ... Materials Science in Semiconductor Processing 97, 62-66, 2019 | 39 | 2019 |
| Radiation damage and implanted He atom interaction during void formation in silicon V Raineri, M Saggio Applied physics letters 71 (12), 1673-1675, 1997 | 39 | 1997 |
| Mobile telephone H Hosoi, Y Hosoi, M Morimoto, M Tanaka US Patent 10,079,925, 2018 | 36* | 2018 |
| Growth-site-limited crystallization of amorphous silicon JS Custer, A Battaglia, M Saggio, F Priolo Physical review letters 69 (5), 780, 1992 | 35 | 1992 |
| Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis P Fiorenza, F Iucolano, G Nicotra, C Bongiorno, I Deretzis, A La Magna, ... Nanotechnology 29 (39), 395702, 2018 | 33 | 2018 |
| MOS technology power device M Saggio, F Frisina US Patent 6,404,010, 2002 | 32 | 2002 |
| Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress P Fiorenza, MS Alessandrino, B Carbone, C Di Martino, A Russo, ... Nanotechnology 31 (12), 125203, 2020 | 31 | 2020 |
| Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact P Badalà, S Rascunà, B Cafra, A Bassi, E Smecca, M Zimbone, ... Materialia 9, 100528, 2020 | 30 | 2020 |
| Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations P Fiorenza, C Bongiorno, F Giannazzo, MS Alessandrino, A Messina, ... Applied Surface Science 557, 149752, 2021 | 29 | 2021 |
| Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs P Fiorenza, F Giannazzo, S Cascino, M Saggio, F Roccaforte Applied Physics Letters 117 (10), 2020 | 28 | 2020 |
