| Digital circuit applications of resonant tunneling devices P Mazumder, S Kulkarni, M Bhattacharya, JP Sun, GI Haddad Proceedings of the IEEE 86 (4), 664-686, 1998 | 643 | 1998 |
| Resonant tunneling diodes: Models and properties JP Sun, GI Haddad, P Mazumder, JN Schulman Proceedings of the IEEE 86 (4), 641-660, 1998 | 568 | 1998 |
| Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition K Yang, JR East, GI Haddad Solid-State Electronics 36 (3), 321-330, 1993 | 269 | 1993 |
| Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above H Eisele, A Rydberg, GI Haddad IEEE Transactions on Microwave Theory and Techniques 48 (4), 626-631, 2000 | 169 | 2000 |
| Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates JJ Barnes, RJ Lomax, GI Haddad IEEE transactions on electron devices 23 (9), 1042-1048, 1976 | 156 | 1976 |
| Characteristics of coupled microstrip transmission lines-I: Coupled-mode formulation of inhomogeneous lines MK Krage, GI Haddad IEEE Transactions on Microwave theory and techniques 18 (4), 217-222, 2003 | 146 | 2003 |
| Two-terminal millimeter-wave sources H Eisele, GI Haddad IEEE Transactions on Microwave Theory and Techniques 46 (6), 739-746, 1998 | 139 | 1998 |
| Compact multiple-valued multiplexers using negative differential resistance devices HL Chan, S Mohan, P Mazumder, GI Haddad IEEE Journal of Solid-State Circuits 31 (8), 1151-1156, 1996 | 138 | 1996 |
| Digital logic design using negative differential resistance diodes and field-effect transistors S Kulkarni, P Mazumder, GI Haddad US Patent 5,903,170, 1999 | 135 | 1999 |
| Power and stability limitations of resonant tunneling diodes C Kidner, I Mehdi, JR East, GI Haddad IEEE Transactions on microwave Theory and Techniques 38 (7), 864-872, 1990 | 127 | 1990 |
| Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems SG Yu, KW Kim, MA Stroscio, GJ Iafrate, JP Sun, GI Haddad Journal of applied physics 82 (7), 3363-3367, 1997 | 114 | 1997 |
| Design, modeling, and characterization of monolithically integrated InP-based (1.55/spl mu/m) high-speed (24 Gb/s) pin/HBT front-end photoreceivers K Yang, AL Gutierrez-Aitken, X Zhang, GI Haddad, P Bhattacharya Journal of lightwave technology 14 (8), 1831-1839, 1996 | 102 | 1996 |
| High-efficiency class-A power amplifiers with a dual-bias-control scheme K Yang, GI Haddad, JR East IEEE Transactions on Microwave Theory and Techniques 47 (8), 1426-1432, 1999 | 101 | 1999 |
| Time‐dependent modeling of resonant‐tunneling diodes from direct solution of the Schrödinger equation RK Mains, GI Haddad Journal of applied physics 64 (7), 3564-3569, 1988 | 100 | 1988 |
| Frequency-Dependent Characteristics of MicrostripTransmission Lines MK Krage, GI Haddad IEEE Transactions on Microwave Theory and Techniques 20 (10), 678-688, 1972 | 90 | 1972 |
| Simulation of GaAs IMPATT diodes including energy and velocity transport equations RK Mains, GI Haddad, PA Blakey IEEE transactions on electron devices 30 (10), 1327-1338, 1983 | 88 | 1983 |
| Tunneling devices and applications in high functionality/speed digital circuits GI Haddad, P Mazumder Solid-State Electronics 41 (10), 1515-1524, 1997 | 85 | 1997 |
| Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios RK Mains, GI Haddad Journal of Applied Physics 64 (10), 5041-5044, 1988 | 85 | 1988 |
| Nonlinear properties of IMPATT devices WE Schroeder, GI Haddad Proceedings of the IEEE 61 (2), 153-182, 1973 | 83 | 1973 |
| Microwave solid-state active devices GI Haddad, RJ Trew IEEE Transactions on Microwave Theory and Techniques 50 (3), 760-779, 2002 | 76 | 2002 |
Yang, K.Korea Advanced Insititute of Sciencd and TechnologyPreverjeni e-poštni naslov na ee.kaist.ac.kr
