| A survey of Gallium Nitride (GaN) HEMT for RF and high power applications DN A.S.Augustine Fletcher Superlattice and microstructures 109 (-), 519-537, 2017 | 255 | 2017 |
| Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review J Ajayan, D Nirmal, P Mohankumar, B Mounika, S Bhattacharya, S Tayal, ... Materials Science in Semiconductor Processing 151, 106982, 2022 | 91 | 2022 |
| Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ... Microelectronics Journal 114, 105141, 2021 | 91 | 2021 |
| Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan AEU-International Journal of Electronics and Communications 99, 325-330, 2019 | 88 | 2019 |
| Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon Superlattices and Microstructures 113, 810-820, 2018 | 57 | 2018 |
| Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ... AEU-International Journal of Electronics and Communications 108, 189-194, 2019 | 46 | 2019 |
| GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review J Ajayan, D Nirmal, P Mohankumar, D Kuriyan, ASA Fletcher, ... Microelectronics Journal 92, 104604, 2019 | 45 | 2019 |
| Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer AS Augustine Fletcher, D Nirmal, L Arivazhagan, J Ajayan, A Varghese International Journal of RF and Microwave Computer‐Aided Engineering 30 (2 …, 2020 | 41 | 2020 |
| An intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan Silicon 13, 1591-1598, 2021 | 32 | 2021 |
| Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm KH Hamza, D Nirmal, ASA Fletcher, L Arivazhagan, J Ajayan, R Natarajan AEU-International Journal of Electronics and Communications 136, 153774, 2021 | 25 | 2021 |
| A survey of Gallium Nitride HEMT for RF and high power application AS Augustine Fletcher, D Nirmal Superlattice Microst 109, 519-537, 2017 | 24 | 2017 |
| Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs J Ajayan, D Nirmal, D Kurian, P Mohankumar, L Arivazhagan, ... Journal of Vacuum Science & Technology B 37 (6), 2019 | 18 | 2019 |
| High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: a simulation study C Sivamani, P Murugapandiyan, A Mohanbabu, A Fletcher Microelectronics Journal 140, 105946, 2023 | 16 | 2023 |
| Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier KH Hamza, D Nirmal, ASA Fletcher, J Ajayan, R Natarajan Materials Science and Engineering: B 284, 115863, 2022 | 14 | 2022 |
| Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: a simulation study P Murugapandiyan, D Nirmal, MT Hasan, A Varghese, J Ajayan, ... Materials Science and Engineering: B 273, 115449, 2021 | 14 | 2021 |
| 60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan, KH Hamza, ... Silicon, 1-9, 2021 | 8 | 2021 |
| A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications P Murugapandiyan, SRK Kalva, V Rajyalakshmi, BA Princy, YU Tarauni, ... Micro and Nanostructures 177, 207545, 2023 | 7 | 2023 |
| A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations ASA Fletcher, D Nirmal, L Arivazhagan, J Ajayan, MG Raj, KH Hamza, ... Journal of Electronic Materials 51 (3), 1215-1225, 2022 | 6 | 2022 |
| A survey on leakage power reduction techniques by using power gating methodology MPP Kumar, ASA Fletcher International Journal of Engineering Trends and Technology (IJETT) 9 (11), 2014 | 6 | 2014 |
| Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics P Murugapandiyan, K Sri Rama Krishna, A Revathy, A Fletcher Journal of Electronic Materials 53 (6), 2973-2987, 2024 | 4 | 2024 |
