Прати
Wanxiang Feng(冯万祥)
Wanxiang Feng(冯万祥)
Верификована је имејл адреса на bit.edu.cn
Наслов
Навело
Навело
Година
Coupled Spin and Valley Physics in Monolayers of and Other Group-VI Dichalcogenides
D Xiao, GB Liu, W Feng, X Xu, W Yao
Physical review letters 108 (19), 196802, 2012
56262012
Quantum spin Hall effect in silicene and two-dimensional germanium
CC Liu, W Feng, Y Yao
Physical review letters 107 (7), 076802, 2011
26312011
Quantum anomalous Hall effect in graphene from Rashba and exchange effects
Z Qiao, SA Yang, W Feng, WK Tse, J Ding, Y Yao, J Wang, Q Niu
Physical Review B—Condensed Matter and Materials Physics 82 (16), 161414, 2010
7552010
Half-Heusler compounds as a new class of three-dimensional topological insulators
D Xiao, Y Yao, W Feng, J Wen, W Zhu, XQ Chen, GM Stocks, Z Zhang
Physical review letters 105 (9), 096404, 2010
4222010
Large anomalous Hall effect in a half-Heusler antiferromagnet
T Suzuki, R Chisnell, A Devarakonda, YT Liu, W Feng, D Xiao, JW Lynn, ...
Nature Physics 12 (12), 1119-1123, 2016
3372016
Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
W Feng, Y Yao, W Zhu, J Zhou, W Yao, D Xiao
Physical Review B—Condensed Matter and Materials Physics 86 (16), 165108, 2012
3082012
Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study
J Ding, Z Qiao, W Feng, Y Yao, Q Niu
Physical Review B—Condensed Matter and Materials Physics 84 (19), 195444, 2011
2862011
Topological Aspect and Quantum Magnetoresistance of
W Zhang, R Yu, W Feng, Y Yao, H Weng, X Dai, Z Fang
Physical review letters 106 (15), 156808, 2011
2432011
Half-Heusler topological insulators: A first-principles study with the Tran-Blaha modified Becke-Johnson density functional
W Feng, D Xiao, Y Zhang, Y Yao
Physical Review B—Condensed Matter and Materials Physics 82 (23), 235121, 2010
2282010
Valley-dependent properties of monolayer , and
S Li, W Wu, X Feng, S Guan, W Feng, Y Yao, SA Yang
Physical Review B 102 (23), 235435, 2020
2102020
Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4
JJ Zhou, W Feng, CC Liu, S Guan, Y Yao
Nano letters 14 (8), 4767-4771, 2014
1922014
Three-Dimensional Topological Insulators in I-III-VI2 and II-IV-V2 Chalcopyrite Semiconductors
W Feng, D Xiao, J Ding, Y Yao
Physical review letters 106 (1), 016402, 2011
1882011
Memristive crossbar arrays for storage and computing applications
H Li, S Wang, X Zhang, W Wang, R Yang, Z Sun, W Feng, P Lin, Z Wang, ...
Advanced Intelligent Systems 3 (9), 2100017, 2021
1782021
Large magneto-optical Kerr effect in noncollinear antiferromagnets
W Feng, GY Guo, J Zhou, Y Yao, Q Niu
Physical Review B 92 (14), 144426, 2015
1462015
Computational characterization of monolayer C3N: A two-dimensional nitrogen-graphene crystal
X Zhou, W Feng, S Guan, B Fu, W Su, Y Yao
Journal of Materials Research 32 (15), 2993-3001, 2017
1402017
Crystal Thermal Transport in Altermagnetic
X Zhou, W Feng, RW Zhang, L Šmejkal, J Sinova, Y Mokrousov, Y Yao
Physical review letters 132 (5), 056701, 2024
1132024
Spin-order dependent anomalous Hall effect and magneto-optical effect in the noncollinear antiferromagnets with , Zn, Ag, or Ni
X Zhou, JP Hanke, W Feng, F Li, GY Guo, Y Yao, S Blügel, Y Mokrousov
Physical Review B 99 (10), 104428, 2019
952019
Quantum spin Hall and metallic states in an organic material
B Zhao, J Zhang, W Feng, Y Yao, Z Yang
Physical Review B 90 (20), 201403, 2014
892014
Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
X Zhou, RW Zhang, Z Zhang, W Feng, Y Mokrousov, Y Yao
npj Computational Materials 7 (1), 160, 2021
882021
Topological magneto-optical effects and their quantization in noncoplanar antiferromagnets
W Feng, JP Hanke, X Zhou, GY Guo, S Blügel, Y Mokrousov, Y Yao
Nature Communications 11 (1), 118, 2020
842020
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