| AlScN/GaN HEMTs grown by metal-organic chemical vapor deposition with 8.4 W/mm output power and 48% power-added efficiency at 30 GHz S Krause, I Streicher, P Waltereit, L Kirste, P Brückner, S Leone IEEE Electron Device Letters 44 (1), 17-20, 2022 | 52 | 2022 |
| Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition I Streicher, S Leone, L Kirste, C Manz, P Straňák, M Prescher, P Waltereit, ... physica status solidi (RRL)–Rapid Research Letters 17 (2), 2200387, 2023 | 32 | 2023 |
| Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N N Wolff, G Schönweger, I Streicher, MR Islam, N Braun, P Straňák, ... Advanced Physics Research 3 (5), 2300113, 2024 | 23 | 2024 |
| Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride S Leone, I Streicher, M Prescher, P Straňák, L Kirste physica status solidi (RRL)–Rapid Research Letters 17 (10), 2300091, 2023 | 14 | 2023 |
| Effect of AlN and AlGaN interlayers on AlScN/GaN heterostructures grown by metal–organic chemical vapor deposition I Streicher, S Leone, C Manz, L Kirste, M Prescher, P Waltereit, M Mikulla, ... Crystal Growth & Design 23 (2), 782-791, 2023 | 14 | 2023 |
| Voltage-margin limiting mechanisms of AlScN-based HEMTs P Döring, S Krause, P Waltereit, P Brückner, S Leone, I Streicher, ... Applied Physics Letters 123 (3), 2023 | 9 | 2023 |
| Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor deposition I Streicher, S Leone, L Kirste, O Ambacher Journal of Vacuum Science & Technology A 40 (3), 2022 | 9 | 2022 |
| Understanding interfaces in AlScN/GaN heterostructures I Streicher, S Leone, M Zhang, TS Tlemcani, M Bah, P Straňák, L Kirste, ... Advanced Functional Materials 34 (39), 2403027, 2024 | 7 | 2024 |
| Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition I Streicher, P Straňák, L Kirste, M Prescher, S Müller, S Leone APL materials 12 (5), 2024 | 1 | 2024 |
| Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations F Ercolano, L Balestra, S Krause, S Leone, I Streicher, P Waltereit, ... 2023 IEEE International Integrated Reliability Workshop (IIRW), 1-7, 2023 | 1 | 2023 |
| Electric field-induced domain structures in ferroelectric AlScN thin films N Wolff, T Grieb, G Schönweger, FF Krause, I Streicher, S Leone, ... Journal of Applied Physics 137 (8), 2025 | | 2025 |
| TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs F Ercolano, L Balestra, S Leone, I Streicher, P Waltereit, M Dammann, ... Power Electronic Devices and Components, 100080, 2025 | | 2025 |
| Ex situ observation of ferroelectric domain evolution in wurtzite-type AlScN thin films N Wolff, T Grieb, G Schönweger, R Islam, FF Krause, A Rosenauer, ... BIO Web of Conferences 129, 29015, 2024 | | 2024 |
| Epitaxy of novel AlScN/GaN and AlYN/GaN heterostructures by metal-organic chemical vapour deposition IM Streicher Albert-Ludwigs-Universität Freiburg im Breisgau, 2024 | | 2024 |
| (Invited) Recent Advances and Challenges of MOCVD-Grown AlScN/GaN HEMTs S Krause, P Döring, I Streicher, P Waltereit, P Brückner, S Leone Electrochemical Society Meeting Abstracts 244, 1578-1578, 2023 | | 2023 |
