| Unraveling the dynamics of charge trapping and de-trapping in ferroelectric FETs S Deng, Z Zhao, YS Kim, S Duenkel, D MacMahon, R Tiwari, ... IEEE Transactions on Electron Devices 69 (3), 1503-1511, 2022 | 41 | 2022 |
| On the channel percolation in ferroelectric FET towards proper analog states engineering K Ni, S Thomann, O Prakash, Z Zhao, S Deng, H Amrouch 2021 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2021 | 41 | 2021 |
| Deep random forest with ferroelectric analog content addressable memory X Yin, F Müller, AF Laguna, C Li, Q Huang, Z Shi, M Lederer, N Laleni, ... Science advances 10 (23), eadk8471, 2024 | 28 | 2024 |
| Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning A Saha, ANM Islam, Z Zhao, S Deng, K Ni, A Sengupta Applied Physics Letters 119 (13), 2021 | 26 | 2021 |
| An Ultracompact Single‐Ferroelectric Field‐Effect Transistor Binary and Multibit Associative Search Engine X Yin, F Müller, Q Huang, C Li, M Imani, Z Yang, J Cai, M Lederer, R Olivo, ... Advanced Intelligent Systems 5 (7), 2200428, 2023 | 25 | 2023 |
| Trap capture and emission dynamics in ferroelectric field-effect transistors and their impact on device operation and reliability N Tasneem, Z Wang, Z Zhao, N Upadhyay, S Lombardo, H Chen, J Hur, ... 2021 IEEE International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2021 | 23 | 2021 |
| On the write schemes and efficiency of FeFET 1T NOR array for embedded nonvolatile memory and beyond Y Xiao, Y Xu, Z Jiang, S Deng, Z Zhao, A Mallick, L Sun, R Joshi, X Li, ... 2022 International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2022 | 17 | 2022 |
| Ferroelectric compute-in-memory annealer for combinatorial optimization problems X Yin, Y Qian, A Vardar, M Günther, F Müller, N Laleni, Z Zhao, Z Jiang, ... Nature Communications 15 (1), 2419, 2024 | 16 | 2024 |
| Hardware functional obfuscation with ferroelectric active interconnects T Yu, Y Xu, S Deng, Z Zhao, N Jao, YS Kim, S Duenkel, S Beyer, K Ni, ... Nature communications 13 (1), 2235, 2022 | 16 | 2022 |
| An ultra-compact single fefet binary and multi-bit associative search engine X Yin, F Müller, Q Huang, C Li, M Imani, Z Yang, J Cai, M Lederer, R Olivo, ... arXiv preprint arXiv:2203.07948, 2022 | 13 | 2022 |
| Overview of ferroelectric memory devices and reliability aware design optimization S Deng, Z Zhao, S Kurinec, K Ni, Y Xiao, T Yu, V Narayanan Proceedings of the 2021 Great Lakes Symposium on VLSI, 473-478, 2021 | 13 | 2021 |
| CMOS-compatible ising machines built using bistable latches coupled through ferroelectric transistor arrays A Mallick, Z Zhao, MK Bashar, S Alam, MM Islam, Y Xiao, Y Xu, A Aziz, ... Scientific reports 13 (1), 1515, 2023 | 12 | 2023 |
| Compact ferroelectric programmable majority gate for compute-in-memory applications S Deng, M Benkhelifa, S Thomann, Z Faris, Z Zhao, TJ Huang, Y Xu, ... 2022 International Electron Devices Meeting (IEDM), 36.7. 1-36.7. 4, 2022 | 11 | 2022 |
| On the feasibility of 1t ferroelectric FET memory array Z Jiang, Z Zhao, S Deng, Y Xiao, Y Xu, H Mulaosmanovic, S Duenkel, ... IEEE Transactions on Electron Devices 69 (12), 6722-6730, 2022 | 11 | 2022 |
| Efficiency of ferroelectric field-effect transistors: An experimental study N Tasneem, MM Islam, Z Wang, Z Zhao, N Upadhyay, SF Lombardo, ... IEEE Transactions on Electron Devices 69 (3), 1568-1574, 2022 | 11 | 2022 |
| A 2-transistor-2-capacitor ferroelectric edge compute-in-memory scheme with disturb-free inference and high endurance X Ma, S Deng, J Wu, Z Zhao, D Lehninger, T Ali, K Seidel, S De, X He, ... IEEE Electron Device Letters 44 (7), 1088-1091, 2023 | 9 | 2023 |
| Suppressing channel percolation in ferroelectric fet for reliable neuromorphic applications K Ni, O Prakash, S Thomann, Z Zhao, S Deng, H Amrouch 2022 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2022 | 8 | 2022 |
| Computational associative memory based on monolithically integrated metal-oxide thin film transistors for update-frequent search applications Z Zhao, J Gomez, H Ye, M Imani, X Yin, S Deng, B Melanson, J Zhang, ... 2021 IEEE International Electron Devices Meeting (IEDM), 37.6. 1-37.6. 4, 2021 | 8 | 2021 |
| Predictive modeling of ferroelectric tunnel junctions for memory and analog weight cell applications Y Xiao, S Deng, Z Zhao, V Narayanan, K Ni 2021 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2021 | 8 | 2021 |
| Quasi-nondestructive read out of ferroelectric capacitor polarization by exploiting a 2TnC cell to relax the endurance requirement Y Xiao, S Deng, Z Zhao, Z Faris, Y Xu, TJ Huang, V Narayanan, K Ni IEEE Electron Device Letters 44 (9), 1436-1439, 2023 | 7 | 2023 |
Kai NiUniversity of Notre DameВерификована је имејл адреса на nd.edu
