| A survey of Gallium Nitride HEMT for RF and high power applications ASA Fletcher, D Nirmal Superlattices and Microstructures, 2017 | 266 | 2017 |
| A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies J Ajayan, D Nirmal, P Mohankumar, M Saravanan, M Jagadesh, ... Superlattices and Microstructures 143, 106549, 2020 | 190 | 2020 |
| A review of InP/InAlAs/InGaAs based transistors for high frequency applications J Ajayan, D Nirmal Superlattices and Microstructures 86, 1-19, 2015 | 167 | 2015 |
| A review of GaN HEMT broadband power amplifiers KH Hamza, D Nirmal AEU-International Journal of Electronics and Communications 116, 153040, 2020 | 155 | 2020 |
| Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications JC Pravin, D Nirmal, P Prajoon, J Ajayan Physica E: Low-dimensional Systems and Nanostructures 83, 95-100, 2016 | 110 | 2016 |
| Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review J Ajayan, D Nirmal, P Mohankumar, B Mounika, S Bhattacharya, S Tayal, ... Materials Science in Semiconductor Processing 151, 106982, 2022 | 91 | 2022 |
| Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ... Microelectronics Journal 114, 105141, 2021 | 91 | 2021 |
| Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan AEU-International Journal of Electronics and Communications 99, 325-330, 2019 | 88 | 2019 |
| Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications J Ajayan, D Nirmal, P Prajoon, JC Pravin AEU-International Journal of Electronics and Communications 79, 151-157, 2017 | 85 | 2017 |
| Investigation on Simulation-Based Specific Absorption Rate in Ultra-Wideband Antenna for Breast Cancer Detection S Subramanian, B Sundarambal, D Nirmal IEEE Sensors Journal 18 (24), 10002-10009, 2018 | 80 | 2018 |
| InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ... AEU-International Journal of Electronics and Communications 94, 199-214, 2018 | 75 | 2018 |
| Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review B Mounika, J Ajayan, S Bhattacharya, D Nirmal Micro and Nanostructures 168, 207317, 2022 | 68 | 2022 |
| Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon Superlattices and Microstructures 113, 810-820, 2018 | 57 | 2018 |
| The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs BK Jebalin, AS Rekh, P Prajoon, NM Kumar, D Nirmal Microelectronics Journal 46 (12), 1387-1391, 2015 | 55 | 2015 |
| On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates A Jarndal, L Arivazhagan, D Nirmal International Journal of RF and Microwave Computer‐Aided Engineering 30 (6 …, 2020 | 51 | 2020 |
| Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics D Nirmal, P Vijayakumar, DM Thomas, BK Jebalin, N Mohankumar Microelectronics Reliability 53 (3), 499-504, 2012 | 50 | 2012 |
| 20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications J Ajayan, D Nirmal Superlattices and Microstructures 100, 526-534, 2016 | 49 | 2016 |
| 20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications J Ajayan, D Nirmal International Journal of Electronics 104 (3), 504-512, 2017 | 47 | 2017 |
| Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal Superlattices and Microstructures 78, 210-223, 2015 | 47 | 2015 |
| Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ... AEU-International Journal of Electronics and Communications 108, 189-194, 2019 | 46 | 2019 |
Dr. J. AjayanProfessor at SR UniversityВерификована је имејл адреса на sru.edu.in
