| Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity HY Lan, YH Hsieh, ZY Chiao, D Jariwala, MH Shih, TJ Yen, O Hess, YJ Lu Nano Letters 21 (7), 3083-3091, 2021 | 106 | 2021 |
| High-speed integrated micro-LED array for visible light communication HY Lan, IC Tseng, YH Lin, GR Lin, DW Huang, CH Wu Optics letters 45 (8), 2203-2206, 2020 | 71 | 2020 |
| 752-MHz modulation bandwidth of high-speed blue micro light-emitting diodes HY Lan, IC Tseng, HY Kao, YH Lin, GR Lin, CH Wu IEEE Journal of Quantum Electronics 54 (5), 1-6, 2018 | 50 | 2018 |
| Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices CC Chiang, HY Lan, CS Pang, J Appenzeller, Z Chen IEEE Electron Device Letters 43 (2), 319-322, 2021 | 49 | 2021 |
| Plasmon-enhanced solar-driven hydrogen evolution using titanium nitride metasurface broadband absorbers MJ Yu, CL Chang, HY Lan, ZY Chiao, YC Chen, HW Howard Lee, ... Acs Photonics 8 (11), 3125-3132, 2021 | 44 | 2021 |
| Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via TaOxInterfacial Layer HY Lan, VP Oleshko, AV Davydov, J Appenzeller, Z Chen IEEE Transactions on Electron Devices 70 (4), 2067-2074, 2023 | 25 | 2023 |
| Dielectric Interface Engineering for High-Performance Monolayer MoS₂ Transistors via hBN Interfacial Layer and Ta Seeding HY Lan, J Appenzeller, Z Chen 2022 International Electron Devices Meeting (IEDM), 7.7. 1-7.7. 4, 2022 | 11 | 2022 |
| Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts Z Sun, SY Kim, J Cai, J Shen, HY Lan, Y Tan, X Wang, C Shen, H Wang, ... ACS nano 18 (33), 22444-22453, 2024 | 10 | 2024 |
| High-Performance Complementary Circuits from Two-Dimensional MoTe2 J Cai, Z Sun, P Wu, R Tripathi, HY Lan, J Kong, Z Chen, J Appenzeller Nano Letters 23 (23), 10939-10945, 2023 | 9 | 2023 |
| Wafer-scale CVD Monolayer WSe2 p-FETs with Record-high 727 μA/μm Ion and 490 μS/ μm gmax via Hybrid Charge Transfer and Molecular Doping HY Lan, R Tripathi, X Liu, J Appenzeller, Z Chen 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 7 | 2023 |
| Design and process co-optimization of 2-D monolayer transistors via machine learning CC Chiang, HY Lan, L Liu, YP Chen, D Zemlyanov, J Appenzeller, ... IEEE Transactions on Electron Devices 70 (11), 5991-5996, 2023 | 6 | 2023 |
| Characteristics of blue GaN/InGaN quantum-well light-emitting transistor HY Lan, IC Tseng, YH Lin, SW Chang, CH Wu IEEE Electron Device Letters 41 (1), 91-94, 2019 | 4 | 2019 |
| Near-Ideal Subthreshold Swing in Scaled 2D Transistors: The Critical Role of Monolayer hBN Passivation HY Lan, R Tripathi, J Appenzeller, Z Chen IEEE Electron Device Letters, 2024 | 1 | 2024 |
| Plasmon-Enhanced Solar-Driven Hydrogen Evolution Using Plasmonic Metasurface Broadband Absorbers TY Peng, MJ Yu, CL Chang, HY Lan, ZY Chiao, YC Chen, HWH Lee, ... Conference on Lasers and Electro-Optics/Pacific Rim, P_CM16_13, 2022 | 1 | 2022 |
| Visible plasmonic perfect absorber based on titanium nitride metamaterial T Watanabe, MJ Yu, HY Lan, M Haraguchi, YJ Lu Plasmonics: Design, Materials, Fabrication, Characterization, and …, 2020 | 1 | 2020 |
| Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2 HY Lan, SH Yang, KA Kantre, D Cott, R Tripathi, J Appenzeller, Z Chen npj 2D Materials and Applications 9 (1), 5, 2025 | | 2025 |
| Stable Nitric Oxide Doping in Monolayer WSe2 for High-Performance P-type Transistors Z Chen, HY Lan, CP Lin, J Cai, Z Sun, P Wu, Y Tan, TH Hou, ... | | 2024 |
| Unconventional Spin Hall Effect in Low Symmetry Semimetal for Large Spin-Orbit Readout Unit R Tripathi, HY Lan, P Debashis, H Li, M Dc, X Liu, J Cai, ST Konakanchi, ... APS March Meeting Abstracts 2024, Q21. 004, 2024 | | 2024 |
| Broadband Plasmonic Perfect Absorbers using Titanium Nitride Metasurface for Efficient Solar Hydrogen Generation MJ Yu, CL Chang, HY Lan, ZY Chiao, YC Chen, HW Howard Lee, ... American Chemical Society (ACS), 2021 | | 2021 |
| Lithography method HY Lan, PC Cheng, CJ Huang, TC Fu, TY Lee US Patent 10684561B2, 2020 | | 2020 |