| Mott-transition-based RRAM Y Wang, KM Kang, M Kim, HS Lee, R Waser, D Wouters, R Dittmann, ... Materials today 28, 63-80, 2019 | 83 | 2019 |
| Filamentary and interface-type memristors based on tantalum oxide for energy-efficient neuromorphic hardware M Kim, MA Rehman, D Lee, Y Wang, DH Lim, MF Khan, H Choi, QY Shao, ... ACS applied materials & interfaces 14 (39), 44561-44571, 2022 | 54 | 2022 |
| Al/F codoping effect on the structural, electrical, and optical properties of ZnO films grown via atomic layer deposition KM Kang, Y Wang, M Kim, C Lee, HH Park Applied Surface Science 535, 147734, 2021 | 34 | 2021 |
| Temperature effects on electromechanical response of deposited piezoelectric sensors used in structural health monitoring of aerospace structures H Hoshyarmanesh, M Ghodsi, M Kim, HH Cho, HH Park Sensors 19 (12), 2805, 2019 | 32 | 2019 |
| Study on properties of Ga/F-co-doped ZnO thin films prepared using atomic layer deposition KM Kang, Y Wang, M Kim, HH Park Thin Solid Films 660, 913-919, 2018 | 32 | 2018 |
| Linear and symmetric Li-based composite memristors for efficient supervised learning SM Kim, S Kim, L Ling, SE Liu, S Jin, YM Jung, M Kim, HH Park, ... ACS applied materials & interfaces 14 (4), 5673-5681, 2022 | 28 | 2022 |
| PZT/PZT and PZT/BiT composite piezo-sensors in aerospace SHM applications: photochemical metal organic+ infiltration deposition and characterization H Hoshyarmanesh, N Ebrahimi, A Jafari, P Hoshyarmanesh, M Kim, ... Sensors 19 (1), 13, 2018 | 28 | 2018 |
| N-doped Al2O3 thin films deposited by atomic layer deposition M Kim, KM Kang, Y Wang, HH Park Thin Solid Films 660, 657-662, 2018 | 27 | 2018 |
| Oxygen vacancy-passivated ZnO thin film formed by atomic layer deposition using H2O2 Y Wang, KM Kang, M Kim, HH Park Journal of Vacuum Science & Technology A 36 (3), 2018 | 22 | 2018 |
| Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition Y Wang, KM Kang, M Kim, HH Park Thin Solid Films 660, 852-858, 2018 | 19 | 2018 |
| Development of directly grown‐graphene–silicon Schottky barrier solar cell using co‐doping technique MA Rehman, S Park, MF Khan, MF Bhopal, G Nazir, M Kim, A Farooq, ... International Journal of Energy Research 46 (8), 11510-11522, 2022 | 18 | 2022 |
| Suppressed oxygen vacancy in pristine/N doped ZnO and improved ZnO homogenous pn junction performance by H2O2 oxidant Y Wang, M Kim, AS Chabungbam, D Kim, HH Park Applied Surface Science 579, 152170, 2022 | 17 | 2022 |
| Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition M Kim, Y Wang, D Kim, Q Shao, HS Lee, HH Park APL Materials 10 (3), 2022 | 16 | 2022 |
| Film thickness effect in c-axis oxygen vacancy-passivated ZnO prepared via atomic layer deposition by using H2O2 Y Wang, KM Kang, M Kim, HH Park Applied Surface Science 529, 147095, 2020 | 16 | 2020 |
| The role of oxygen defects engineering via passivation of the Al2O3 interfacial layer for the direct growth of a graphene-silicon Schottky junction solar cell M Kim, MA Rehman, KM Kang, Y Wang, S Park, HS Lee, SB Roy, ... Applied Materials Today 26, 101267, 2022 | 15 | 2022 |
| Structural, electrical, and optical properties of Si-doped ZnO thin films prepared via supercycled atomic layer deposition C Hong, KM Kang, M Kim, Y Wang, T Kim, C Lee, HH Park Materials Science and Engineering: B 273, 115401, 2021 | 13 | 2021 |
| High-reliability and self-rectifying alkali ion memristor through bottom electrode design and dopant incorporation BM Lim, YM Lee, CS Yoo, M Kim, SJ Kim, S Kim, JJ Yang, HS Lee ACS nano 18 (8), 6373-6386, 2024 | 10 | 2024 |
| Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition M Kim, D Kim, Y Wang, D Lee, DH Lim, H Choi, I Kymissis, JJ Yang, J Suh, ... Applied Materials Today 38, 102204, 2024 | 9 | 2024 |
| Homogeneous ZnO pn junction formed by continuous atomic layer deposition process KM Kang, C Lee, M Kim, H Choi, D Kim, SR Kim, JW Park, HH Park Journal of Alloys and Compounds 925, 166694, 2022 | 8 | 2022 |
| Electric field induced Mott transition and bipolar resistive switching in La2Ti2O7-x thin film Y Wang, M Kim, C Lee, AS Chabungbam, J Kim, J Lee, HS Lee, Q Shao, ... Applied Materials Today 26, 101395, 2022 | 8 | 2022 |
Hyung-Ho ParkYonsei UniversityВерификована је имејл адреса на yonsei.ac.kr