| A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensor Z Wang, S Wang, Z Zhang, C Wang, D Yang, X Chen, Z Wang, J Cao, ... IEEE Transactions on Electron Devices 66 (4), 1917-1923, 2019 | 19 | 2019 |
| On the Baliga’s figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate Z Wang, Z Wang, Z Zhang, D Yang, Y Yao Nanoscale Research Letters 14, 1-10, 2019 | 18 | 2019 |
| Approaching ultra-low turn-on voltage in GaN lateral diode Z Wang, D Yang, J Shi, Y Yao Semiconductor Science and Technology 36 (1), 014003, 2020 | 12 | 2020 |
| A novel technology for turn-on voltage reduction of high-performance lateral heterojunction diode with source-gate shorted anode Z Wang, D Yang, J Cao, F Wang, Y Yao Superlattices and Microstructures 125, 144-150, 2019 | 10 | 2019 |
| A novel high performance lateral AlGaN/GaN Schottky barrier diode using highly effective field plate with polarization enhanced channel Z Wang, X Feng, D Yang, C Chen, Z Wang, X Chen, C Wang, S Wang, ... 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 377-379, 2019 | 4 | 2019 |
| Modelling on GaN power HEMT with condideration of subthreshold swing using artificial intelligence technology Y Yao, Z Wang, L Li, D Yang, S Wang, X Chen 2019 International Conference on IC Design and Technology (ICICDT), 1-3, 2019 | 2 | 2019 |