| Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth B Voigtländer Surface Science Reports 43 (5-8), 127-254, 2001 | 543 | 2001 |
| Epitaxial growth of thin magnetic cobalt films on Au (111) studied by scanning tunneling microscopy B Voigtländer, G Meyer, NM Amer Physical Review B 44 (18), 10354, 1991 | 500 | 1991 |
| Scanning probe microscopy: Atomic force microscopy and scanning tunneling microscopy B Voigtländer Springer, 2015 | 477 | 2015 |
| Modification of growth kinetics in surfactant-mediated epitaxy B Voigtländer, A Zinner, T Weber, HP Bonzel Physical Review B 51 (12), 7583, 1995 | 295 | 1995 |
| Kinetically self-limiting growth of Ge islands on Si (001) M Kästner, B Voigtländer Physical review letters 82 (13), 2745, 1999 | 253 | 1999 |
| Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy B Voigtländer, A Zinner Applied physics letters 63 (22), 3055-3057, 1993 | 230 | 1993 |
| Atomic force microscopy B Voigtländer Springer, 2019 | 178* | 2019 |
| Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties OP Pchelyakov, YB Bolkhovityanov, AV Dvurechenskii, LV Sokolov, ... Semiconductors 34, 1229-1247, 2000 | 161 | 2000 |
| Influence of surfactants on the growth-kinetics of Si on Si (111) B Voigtländer, A Zinner Surface Science Letters 292 (1-2), L775-L780, 1993 | 157 | 1993 |
| Epitaxial growth of Fe on Au (111): a scanning tunneling microscopy investigation B Voigtländer, G Meyer, NM Amer Surface Science Letters 255 (3), L529-L535, 1991 | 155 | 1991 |
| Transition from island growth to step-flow growth for Si/Si (100) epitaxy B Voigtländer, T Weber, P Šmilauer, DE Wolf Physical review letters 78 (11), 2164, 1997 | 148 | 1997 |
| Nanowires and nanorings at the atomic level M Kawamura, N Paul, V Cherepanov, B Voigtländer Physical review letters 91 (9), 096102, 2003 | 135 | 2003 |
| Magic islands in Si/Si (111) homoepitaxy B Voigtländer, M Kästner, P Šmilauer Physical review letters 81 (4), 858, 1998 | 122 | 1998 |
| Molecular beam epitaxy of silicon–germanium nanostructures OP Pchelyakov, YB Bolkhovityanov, AV Dvurechenskii, AI Nikiforov, ... Thin Solid Films 367 (1-2), 75-84, 2000 | 118 | 2000 |
| Structure and adsorbate-adsorbate interactions of the compressed Ni (110)-(2× 1) CO structure B Voigtländer, D Bruchmann, S Lehwald, H Ibach Surface Science 225 (1-2), 151-161, 1990 | 116 | 1990 |
| Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si (111): Strain relief mechanisms and growth kinetics G Meyer, B Voigtländer, NM Amer Surface science 274 (2), L541-L545, 1992 | 109 | 1992 |
| Direct observation of subcritical fluctuations during the formation of strained semiconductor islands DE Jesson, M Kästner, B Voigtländer Physical review letters 84 (2), 330, 2000 | 105 | 2000 |
| On the microscopic origin of the kinetic step bunching instability on vicinal Si (001) J Mysliveček, C Schelling, F Schäffler, G Springholz, P Šmilauer, J Krug, ... Surface science 520 (3), 193-206, 2002 | 103 | 2002 |
| Hydrogen adsorption and the adsorbate-induced Ni (110) reconstruction-an EELS study B Voigtländer, S Lehwald, H Ibach Surface Science 208 (1-2), 113-135, 1989 | 96 | 1989 |
| Surfactant‐mediated epitaxy of Ge on Si (111): The role of kinetics and characterization of the Ge layers B Voigtländer, A Zinner Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (4 …, 1994 | 91 | 1994 |
