| Modeling and design for magnetoelectric ternary content addressable memory (TCAM) S Narla, P Kumar, AF Laguna, D Reis, XS Hu, M Niemier, A Naeemi IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022 | 14 | 2022 |
| Design of a compact spin-orbit-torque-based ternary content addressable memory S Narla, P Kumar, AF Laguna, D Reis, XS Hu, M Niemier, A Naeemi IEEE Transactions on Electron Devices 70 (2), 506-513, 2022 | 11 | 2022 |
| Impact of technology scaling and back-end-of-the-line technology solutions on magnetic random-access memories P Kumar, S Narla, A Naeemi IEEE Journal on Exploratory Solid-State Computational Devices and Circuits …, 2024 | 2 | 2024 |
| Cross-Layer Modeling and Design of Content Addressable Memories in Advanced Technology Nodes for Similarity Search S Narla, P Kumar, M Adnaan, A Naeemi IEEE Transactions on Electron Devices, 2024 | 1 | 2024 |
| Crosslayer modeling and design for spin-orbit-torque and magnetoelectric memory arrays and compute-in-memory P Kumar, S Narla, YC Liao, A Naeemi Spintronics XV 12205, 17-24, 2022 | 1 | 2022 |
| A 5T-2MTJ STT-assisted Spin Orbit Torque based Ternary Content Addressable Memory for Hardware Accelerators S Narla, P Kumar, A Naeemi arXiv preprint arXiv:2409.17863, 2024 | | 2024 |
| ii Special Topic on Oxide Electronics for Beyond CMOS Logic and Memory by DE Nikonov PAPERS SRS Raman, S Xie, JP Kulkarni, S Narla, P Kumar, AF Laguna, D Reis, ... | | |
