| GaN power integration for high frequency and high efficiency power applications: A review R Sun, J Lai, W Chen, B Zhang Ieee Access 8, 15529-15542, 2020 | 185 | 2020 |
| An efficient and reliable solid-state circuit breaker based on mixture device X Xu, W Chen, C Liu, R Sun, Z Li, B Zhang IEEE Transactions on Power Electronics 36 (9), 9767-9771, 2021 | 46 | 2021 |
| Monolithic GaN half-bridge stages with integrated gate drivers for high temperature DC-DC buck converters M Cui, R Sun, Q Bu, W Liu, H Wen, A Li, YC Liang, C Zhao IEEE Access 7, 184375-184384, 2019 | 45 | 2019 |
| All-GaN power integration: Devices to functional subcircuits and converter ICs R Sun, YC Liang, YC Yeo, C Zhao, W Chen, B Zhang IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 31-41, 2019 | 42 | 2019 |
| Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters M Cui, Q Bu, Y Cai, R Sun, W Liu, H Wen, S Lam, YC Liang, IZ Mitrovic, ... Japanese Journal of Applied Physics 58 (5), 056505, 2019 | 42 | 2019 |
| Analytical switching loss model for GaN-based control switch and synchronous rectifier in low-voltage buck converters Y Xin, W Chen, R Sun, Y Shi, C Liu, Y Xia, F Wang, M Li, J Li, Q Zhou, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 38 | 2019 |
| Au-free AlGaN/GaN MIS-HEMTs with embedded current sensing structure for power switching applications R Sun, YC Liang, YC Yeo, C Zhao IEEE Transactions on Electron Devices 64 (8), 3515-3518, 2017 | 34 | 2017 |
| A novel thyristor-based bidirectional SSCB with controllable current breaking capability X Xu, W Chen, C Liu, R Sun, F Wang, Z Li, B Zhang IEEE Transactions on Power Electronics 37 (4), 4526-4534, 2021 | 24 | 2021 |
| Electrostatic discharge (ESD) behavior of p-GaN HEMTs Y Xin, W Chen, R Sun, Y Shi, C Liu, Y Xia, F Wang, X Xu, Q Shi, Y Wang, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 24 | 2020 |
| Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate Z Wang, J Cao, R Sun, F Wang, Y Yao Superlattices and Microstructures 120, 753-758, 2018 | 24 | 2018 |
| Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion R Sun, YC Liang, YC Yeo, YH Wang, C Zhao physica status solidi (a) 214 (3), 1600562, 2017 | 24 | 2017 |
| A behavioral model for MCT surge current analysis in pulse discharge W Chen, R Sun, K Xiao, H Zhu, C Peng, Z Ruan, J Ruan, B Zhang, Z Li Solid-state electronics 99, 31-37, 2014 | 24 | 2014 |
| Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism F Wang, W Chen, X Xu, R Sun, Z Wang, Y Xia, Y Xin, C Liu, Q Zhou, ... IEEE Transactions on Electron Devices 68 (1), 175-183, 2020 | 22 | 2020 |
| Development of GaN power IC platform and all GaN DC-DC buck converter IC R Sun, YC Liang, YC Yeo, C Zhao, W Chen, B Zhang 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 22 | 2019 |
| Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors F Wang, W Chen, X Li, R Sun, X Xu, Y Xin, Z Wang, Y Shi, Y Xia, C Liu, ... Journal of Physics D: Applied Physics 53 (30), 305106, 2020 | 21 | 2020 |
| An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps F Wang, W Chen, R Sun, Z Wang, Q Zhou, B Zhang Journal of Physics D: Applied Physics 54 (9), 095107, 2020 | 19 | 2020 |
| Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage Z Wang, W Chen, F Wang, J Cao, R Sun, K Ren, Y Luo, S Guo, Z Wang, ... Superlattices and Microstructures 117, 330-335, 2018 | 18 | 2018 |
| Realistic trap configuration scheme with fabrication processes in consideration for the simulations of AlGaN/GaN MIS-HEMT devices R Sun, YC Liang, YC Yeo, YH Wang, C Zhao IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 720-729, 2016 | 18 | 2016 |
| Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation R Sun, X Chen, C Liu, W Chen, B Zhang Applied Physics Letters 119 (13), 2021 | 17 | 2021 |
| High voltage insulated gate trigger thyristor with high-efficiency injection for fast turn-on and high current pulse C Liu, W Chen, R Sun, Y Shi, Q Zhou, Z Li, B Zhang IEEE Electron Device Letters 40 (12), 1965-1968, 2019 | 17 | 2019 |
Wanjun ChenUniversity of Elecronic Science and Technology of ChinaВерификована је имејл адреса на uestc.edu.cn
