Прати
Гайдук, Петр Иванович; PI Gaiduk, ПИ Гайдук
Гайдук, Петр Иванович; PI Gaiduk, ПИ Гайдук
Belarusian State University, Department of RF&CT, 4 Nezavisimosti av., 220030 Minsk, Belarus;
Верификована је имејл адреса на bsu.by
Наслов
Навело
Навело
Година
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
1632003
Chemical bath deposition of PbS nanocrystals: Effect of substrate
AP Gaiduk, PI Gaiduk, AN Larsen
Thin Solid Films 516 (12), 3791-3795, 2008
1042008
Formation of discontinuous tracks in single-crystalline InP by 250-MeV Xe-ion irradiation
O Herre, W Wesch, E Wendler, PI Gaiduk, FF Komarov, S Klaumünzer, ...
Physical Review B 58 (8), 4832, 1998
1021998
Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density
PI Gaiduk, AN Larsen, JL Hansen
Thin Solid Films 367 (1-2), 120-125, 2000
702000
Ion mass and temperature dependence of damage production in ion implanted InP
E Wendler, T Opfermann, PI Gaiduk
Journal of applied physics 82 (12), 5965-5975, 1997
601997
Damage evolution in crystalline InP during irradiation with swift Xe ions
PI Gaiduk, FF Komarov, W Wesch
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000
592000
Discontinuous tracks in arsenic-doped crystalline Si 0.5 Ge 0.5 alloy layers
PI Gaiduk, AN Larsen, C Trautmann, M Toulemonde
Physical Review B 66 (4), 045316, 2002
492002
Damage formation in InP due to high electronic excitation by swift heavy ions
W Wesch, O Herre, PI Gaiduk, E Wendler, S Klaumünzer, P Meier
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998
461998
Discontinuous tracks in relaxed alloy layers: A velocity effect
PI Gaiduk, AN Larsen, JL Hansen, C Trautmann, M Toulemonde
Applied physics letters 83 (9), 1746-1748, 2003
402003
Nanovoids in MBE-grown SiGe alloys implanted in situ with Ge+ ions
PI Gaiduk, JL Hansen, AN Larsen, EA Steinman
Physical Review B 67 (23), 235310, 2003
392003
Track formation in germanium crystals irradiated with superhigh-energy ions
FF Komarov, PI Gaiduk, LA Vlasukova, AJ Didyk, VN Yuvchenko
Vacuum 70 (2-3), 75-79, 2003
352003
Wurtzite InP formation during swift Xe-ion irradiation
PI Gaiduk, FF Komarov, VS Tishkov, W Wesch, E Wendler
Physical Review B 61 (23), 15785, 2000
342000
Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method
MV Malashchonak, ЕА Streltsov, AV Mazanik, AI Kulak, SK Poznyak, ...
Thin Solid Films 589, 145-152, 2015
272015
Iron distribution in the implanted silicon under the action of high-power pulsed ion and laser beams
R Bayazitov, R Batalov, R Nurutdinov, V Shustov, P Gaiduk, I Dezsi, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005
272005
Structural and sensing properties of nanocrystalline SnO2 films deposited by spray pyrolysis from a SnCl2 precursor
PI Gaiduk, AN Kozjevko, SL Prokopjev, C Tsamis, A Nylandsted Larsen
Applied Physics A 91, 667-670, 2008
262008
Damage evolution and track formation in crystalline InP and GaAs during swift Kr and Xe ion irradiation
F Komarov, P Gaiduk, A Kamarou
Vacuum 63 (4), 657-663, 2001
252001
Self-assembling of nanovoids in 800-keV Ge-implanted Si/SiGe multilayered structures
PI Gaiduk, AN Larsen, JL Hansen, E Wendler, W Wesch
Physical Review B 67 (23), 235311, 2003
232003
Tuning the plasmon resonance of metallic tin nanocrystals in Si-based materials
MM Kjeldsen, JL Hansen, TG Pedersen, P Gaiduk, AN Larsen
Applied Physics A 100, 31-37, 2010
222010
Ionisation stimulated defect annealing in GaAs and InP
W Wesch, A Kamarou, E Wendler, K Gärtner, PI Gaiduk, S Klaumünzer
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003
222003
Si self-interstitial injection from Sb complex formation in Si
J Fage-Pedersen, P Gaiduk, J Lundsgaard Hansen, A Nylandsted Larsen
Journal of Applied Physics 88 (6), 3254-3259, 2000
222000
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