| A systematic analysis of defects in ion-implanted silicon KS Jones, S Prussin, ER Weber Applied Physics A 45, 1-34, 1988 | 682 | 1988 |
| A randomized, double-blind, dose-ranging study comparing wound infiltration of DepoFoam bupivacaine, an extended-release liposomal bupivacaine, to bupivacaine HCl for … K Bramlett, E Onel, ER Viscusi, K Jones The Knee 19 (5), 530-536, 2012 | 321 | 2012 |
| Three-dimensional reconstruction of porous LSCF cathodes D Gostovic, JR Smith, DP Kundinger, KS Jones, ED Wachsman Electrochemical and solid-state letters 10 (12), B214, 2007 | 278 | 2007 |
| quantum-dot infrared photodetector with operating temperature up to 260 K L Jiang, SS Li, NT Yeh, JI Chyi, CE Ross, KS Jones Applied physics letters 82 (12), 1986-1988, 2003 | 184 | 2003 |
| Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon LH Zhang, KS Jones, PH Chi, DS Simons Applied physics letters 67 (14), 2025-2027, 1995 | 172 | 1995 |
| Evaluation of the relationship between cathode microstructure and electrochemical behavior for SOFCs JR Smith, A Chen, D Gostovic, D Hickey, D Kundinger, KL Duncan, ... Solid state ionics 180 (1), 90-98, 2009 | 166 | 2009 |
| Ambient measurements and source apportionment of fossil fuel and biomass burning black carbon in Ontario RM Healy, U Sofowote, Y Su, J Debosz, M Noble, CH Jeong, JM Wang, ... Atmospheric Environment 161, 34-47, 2017 | 165 | 2017 |
| Analytical methods development and validation J Breaux, K Jones, P Boulas Pharm. Technol 1, 6-13, 2003 | 153 | 2003 |
| Effect of fluorine on the diffusion of boron in ion implanted Si DF Downey, JW Chow, E Ishida, KS Jones Applied Physics Letters 73 (9), 1263-1265, 1998 | 152 | 1998 |
| Olweus 儿童欺负问卷中文版的修订 张文新， 武建芬 心理发展与教育 15 (2), 7-11, 37, 1999 | 141 | 1999 |
| Direct comparison of the quantized Hall resistance in gallium arsenide and silicon A Hartland, K Jones, JM Williams, BL Gallagher, T Galloway Physical review letters 66 (8), 969, 1991 | 133 | 1991 |
| {311} defects in silicon: The source of the loops J Li, KS Jones Applied Physics Letters 73 (25), 3748-3750, 1998 | 122 | 1998 |
| Amorphization and graphitization of single-crystal diamond—A transmission electron microscopy study DP Hickey, KS Jones, RG Elliman Diamond and related materials 18 (11), 1353-1359, 2009 | 104 | 2009 |
| Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes NG Rudawski, BL Darby, BR Yates, KS Jones, RG Elliman, AA Volinsky Applied Physics Letters 100 (8), 2012 | 103 | 2012 |
| The effect of impurities on diffusion and activation of ion implanted boron in silicon LS Robertson, R Brindos, KS Jones, ME Law, DF Downey, S Falk, J Liu MRS Online Proceedings Library (OPL) 610, B5. 8, 2000 | 94 | 2000 |
| The effect of implant energy, dose, and dynamic annealing on end‐of‐range damage in Ge+‐implanted silicon KS Jones, D Venables Journal of applied physics 69 (5), 2931-2937, 1991 | 94 | 1991 |
| Revision of the Chinese version of olweus child bullying questionnaire WX Zhang, JF Wu, K Jones Psychol Dev Educ 2 (2), 7-11, 1999 | 91 | 1999 |
| Study of reverse annealing behaviors of ultrashallow junction formed using solid phase epitaxial annealing JY Jin, J Liu, U Jeong, S Mehta, K Jones Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 82 | 2002 |
| Ion milling damage in InP and GaAs SJ Pearton, UK Chakrabarti, AP Perley, KS Jones Journal of applied physics 68 (6), 2760-2768, 1990 | 80 | 1990 |
| Effects of hydrostatic pressure on dopant diffusion in silicon H Park, KS Jones, JA Slinkman, ME Law Journal of applied physics 78 (6), 3664-3670, 1995 | 75 | 1995 |
