50-Gb/s ring-resonator-based silicon modulator T Baba, S Akiyama, M Imai, N Hirayama, H Takahashi, Y Noguchi, ... Optics express 21 (10), 11869-11876, 2013 | 235 | 2013 |
Numerical analysis of ballistic-electron transport in magnetic fields by using a quantum point contact and a quantum wire T Usuki, M Saito, M Takatsu, RA Kiehl, N Yokoyama Physical Review B 52 (11), 8244, 1995 | 218 | 1995 |
Single-photon generation in the 1.55-µm optical-fiber band from an InAs/InP quantum dot T Miyazawa, K Takemoto, Y Sakuma, S Hirose, T Usuki, N Yokoyama, ... Japanese Journal of Applied Physics 44 (5L), L620, 2005 | 180 | 2005 |
First demonstration of high density optical interconnects integrated with lasers, optical modulators, and photodetectors on single silicon substrate Y Urino, T Shimizu, M Okano, N Hatori, M Ishizaka, T Yamamoto, T Baba, ... Optics express 19 (26), B159-B165, 2011 | 132 | 2011 |
An optical horn structure for single-photon source using quantum dots at telecommunication wavelength K Takemoto, M Takatsu, S Hirose, N Yokoyama, Y Sakuma, T Usuki, ... Journal of applied physics 101 (8), 2007 | 131 | 2007 |
Semiconductor device for switching a ballistic flow of carriers T Usuki US Patent 5,369,288, 1994 | 123 | 1994 |
12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode S Akiyama, T Baba, M Imai, T Akagawa, M Takahashi, N Hirayama, ... Optics express 20 (3), 2911-2923, 2012 | 95 | 2012 |
Non-classical photon emission from a single InAs/InP quantum dot in the 1.3-µm optical-fiber band K Takemoto, Y Sakuma, S Hirose, T Usuki, N Yokoyama, T Miyazawa, ... Japanese journal of applied physics 43 (7B), L993, 2004 | 95 | 2004 |
Transmission experiment of quantum keys over 50 km using high-performance quantum-dot single-photon source at 1.5 µm wavelength K Takemoto, Y Nambu, T Miyazawa, K Wakui, S Hirose, T Usuki, ... Applied Physics Express 3 (9), 092802, 2010 | 86 | 2010 |
Charge susceptibility of the one-dimensional Hubbard model T Usuki, N Kawakami, A Okiji Physics Letters A 135 (8-9), 476-480, 1989 | 83 | 1989 |
Site-controlled photoluminescence at telecommunication wavelength from InAs∕ InP quantum dots HZ Song, T Usuki, S Hirose, K Takemoto, Y Nakata, N Yokoyama, ... Applied Physics Letters 86 (11), 2005 | 81 | 2005 |
Time-resolved study of carrier transfer among InAs/GaAs multi-coupled quantum dots A Tackeuchi, Y Nakata, S Muto, Y Sugiyama, T Usuki, Y Nishikawa, ... Japanese journal of applied physics 34 (11A), L1439, 1995 | 81 | 1995 |
Compact PIN-diode-based silicon modulator using side-wall-grating waveguide S Akiyama, M Imai, T Baba, T Akagawa, N Hirayama, Y Noguchi, M Seki, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (6), 74-84, 2013 | 78 | 2013 |
Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown layers formed via low energy ion implantation A Nakajima, T Futatsugi, H Nakao, T Usuki, N Horiguchi, N Yokoyama Journal of applied physics 84 (3), 1316-1320, 1998 | 78 | 1998 |
Demonstration of 12.5-Gbps optical interconnects integrated with lasers, optical splitters, optical modulators and photodetectors on a single silicon substrate Y Urino, Y Noguchi, M Noguchi, M Imai, M Yamagishi, S Saitou, ... Optics express 20 (26), B256-B263, 2012 | 77 | 2012 |
Observation of Exciton Transition in 1.3–1.55 µm Band from Single InAs/InP Quantum Dots in Mesa Structure K Takemoto, Y Sakuma, S Hirose, T Usuki, N Yokoyama Japanese journal of applied physics 43 (3A), L349, 2004 | 74 | 2004 |
Tuning of -factor in self-assembled In(Ga)As quantum dots through strain engineering T Nakaoka, T Saito, J Tatebayashi, S Hirose, T Usuki, N Yokoyama, ... Physical Review B—Condensed Matter and Materials Physics 71 (20), 205301, 2005 | 73 | 2005 |
Thermodynamic properties of the one-dimensional Hubbard model N Kawakami, T Usuki, A Okiji Physics Letters A 137 (6), 287-290, 1989 | 73 | 1989 |
Thermodynamic quantities of the one-dimensional hubbard model at finite temperatures T Usuki, N Kawakami, A Okiji Journal of the Physical Society of Japan 59 (4), 1357-1365, 1990 | 71 | 1990 |
Ultralow-power (1.59 mW/Gbps), 56-Gbps PAM4 operation of Si photonic transmitter integrating segmented PIN Mach–Zehnder modulator and 28-nm CMOS driver S Tanaka, T Simoyama, T Aoki, T Mori, S Sekiguchi, SH Jeong, T Usuki, ... Journal of Lightwave Technology 36 (5), 1275-1280, 2018 | 69 | 2018 |