Прати
Romano Hoofman
Romano Hoofman
Strategic Development Director at imec
Верификована је имејл адреса на imec.be
Наслов
Навело
Навело
Година
Semiconductor device and method of manufacturing thereof
A Humbert, R Hoofman
US Patent App. 12/514,214, 2010
5112010
Highly mobile electrons and holes on isolated chains of the semiconducting polymer poly (phenylene vinylene)
RJOM Hoofman, MP De Haas, LDA Siebbeles, JM Warman
Nature 392 (6671), 54-56, 1998
3801998
Challenges in the implementation of low-k dielectrics in the back-end of line
R Hoofman, G Verheijden, J Michelon, F Iacopi, Y Travaly, MR Baklanov, ...
Microelectronic Engineering 80, 337-344, 2005
1502005
The formation and recombination kinetics of positively charged poly (phenylene vinylene) chains in pulse-irradiated dilute solutions
FC Grozema, RJOM Hoofman, LP Candeias, MP de Haas, JM Warman, ...
The Journal of Physical Chemistry A 107 (31), 5976-5986, 2003
722003
Moisture influence on porous low-k reliability
J Michelon, RJOM Hoofman
IEEE Transactions on Device and Materials Reliability 6 (2), 169-174, 2006
682006
Advanced Cu interconnects using air gaps
LG Gosset, A Farcy, J De Pontcharra, P Lyan, R Daamen, G Verheijden, ...
Microelectronic engineering 82 (3-4), 321-332, 2005
512005
Anisotropy of the charge-carrier mobility in polydiacetylene crystals
RJOM Hoofman, LDA Siebbeles, MP de Haas, A Hummel, D Bloor
The Journal of chemical physics 109 (5), 1885-1893, 1998
511998
CMOS biosensor platform
F Widdershoven, D Van Steenwinckel, J Überfeld, T Merelle, H Suy, ...
2010 International Electron Devices Meeting, 36.1. 1-36.1. 4, 2010
452010
Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process
VH Nguyen, R Daamen, R Hoofman
Microelectronic Engineering 76 (1-4), 95-99, 2004
412004
Etch and strip induced material modification of porous low-k (k= 2.2) dielectric
Y Furukawa, R Wolters, H Roosen, JHM Snijders, R Hoofman
Microelectronic engineering 76 (1-4), 25-31, 2004
402004
Void growth modeling upon electromigration stressing in narrow copper lines
D Tio Castro, R Hoofman, J Michelon, DJ Gravesteijn, C Bruynseraede
Journal of Applied Physics 102 (12), 2007
342007
The evolution of multi-level air gap integration towards 32 nm node interconnects
R Daamen, PHL Bancken, VH Nguyen, A Humbert, G Verheijden, ...
Microelectronic engineering 84 (9-10), 2177-2183, 2007
332007
General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material
LG Gosset, V Arnal, C Prindle, R Hoofman, G Verheijden, R Daamen, ...
Proceedings of the IEEE 2003 International Interconnect Technology …, 2003
332003
Intrusion protection using stress changes
R Hoofman, RHW Pijnenburg, YV Ponomarev
US Patent 8,330,191, 2012
272012
Influence of backbone conformation on the photoconductivity of polydiacetylene chains
RJOM Hoofman, GH Gelinck, LDA Siebbeles, MP de Haas, JM Warman, ...
Macromolecules 33 (25), 9289-9297, 2000
272000
Impact of the barrier/dielectric interface quality on reliability of Cu porous-low-k interconnects
Z Tokei, V Sutcliffe, S Demuynck, F Iacopi, P Roussel, GP Beyer, ...
2004 IEEE International Reliability Physics Symposium. Proceedings, 326-332, 2004
262004
Humidity sensor based on progressive corrosion of exposed material
A Humbert, YV Ponomarev, M Merz, R Hoofman
US Patent 8,683,861, 2014
252014
Sensor calibration in an rfid tag
A Humbert, G Curatola, M Merz, RHW Pijenburg, R Hoofman, ...
US Patent App. 12/992,824, 2011
242011
Air gap formation by UV-assisted decomposition of CVD material
M Pantouvaki, A Humbert, E VanBesien, E Camerotto, Y Travaly, ...
Microelectronic Engineering 85 (10), 2071-2074, 2008
242008
Food package with integrated RFID-tag and sensor
R Hoofman, R Daamen, YV Ponomarev, F Kyriaki, M Merz, G Curatola, ...
US Patent 9,884,715, 2018
212018
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