| On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices L Efthymiou, G Longobardi, G Camuso, T Chien, M Chen, F Udrea Applied Physics Letters 110 (12), 2017 | 166 | 2017 |
| Understanding the threshold voltage instability during OFF-state stress in p-GaN HEMTs L Efthymiou, K Murukesan, G Longobardi, F Udrea, A Shibib, K Terrill IEEE Electron Device Letters 40 (8), 1253-1256, 2019 | 118 | 2019 |
| Zero reverse recovery in SiC and GaN Schottky diodes: A comparison L Efthymiou, G Camuso, G Longobardi, F Udrea, E Lin, T Chien, M Chen 2016 28th International symposium on power semiconductor devices and ICs …, 2016 | 44 | 2016 |
| On the source of oscillatory behaviour during switching of power enhancement mode GaN HEMTs L Efthymiou, G Camuso, G Longobardi, T Chien, M Chen, F Udrea Energies 10 (3), 407, 2017 | 32 | 2017 |
| Gate stress induced threshold voltage instability and its significance for reliable threshold voltage measurement in p-GaN HEMT K Murukesan, L Efthymiou, F Udrea 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 24 | 2019 |
| GaN power devices for Electric Vehicles State-of-the-art and future perspective G Longobardi, L Efthymiou, M Arnold 2018 IEEE International Conference on Electrical Systems for Aircraft …, 2018 | 23 | 2018 |
| On the challenges of reliable threshold voltage measurement in ohmic and Schottky gate p-GaN HEMTs K Murukesan, L Efthymiou, F Udrea IEEE Journal of the Electron Devices Society 9, 831-838, 2021 | 17 | 2021 |
| Power semiconductor device with a series connection of two devices F Udrea, L Efthymiou, G Longobardi, M Arnold US Patent 11,336,279, 2022 | 12 | 2022 |
| III-V semiconductor device with integrated protection functions F Udrea, L Efthymiou, G Longobardi, M Arnold US Patent 10,818,786, 2020 | 11 | 2020 |
| III-V semiconductor device with integrated power transistor and start-up circuit F Udrea, L Efthymiou, G Longobardi, M Arnold US Patent 11,658,236, 2023 | 10 | 2023 |
| Power semiconductor device with an auxiliary gate structure F Udrea, L Efthymiou, G Longobardi, M Arnold US Patent 11,404,565, 2022 | 10 | 2022 |
| The smart ICeGaNTM platform with sensing and protection functions for both enhanced ease of use and gate reliability F Udrea, M Arnold, L Efthymiou, Z Ansari, O Fung, J Findlay, K Ledins, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 10 | 2022 |
| Power semiconductor device with optimized field-plate design MS Chen, HC Chien, L Efthymiou, F Udrea, G Longobardi, G Camuso US Patent 10,483,356, 2019 | 7 | 2019 |
| Bonding pad over active area layout for lateral AlGaN/GaN power HEMTs: a critical view L Efthymiou, G Longobardi, G Camuso, F Udrea IEEE Transactions on electron devices 66 (5), 2301-2306, 2019 | 7 | 2019 |
| Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters L Efthymiou, G Longobardi, G Camuso, APS Hsieh, F Udrea 2015 International Semiconductor Conference (CAS), 211-214, 2015 | 7 | 2015 |
| III-V depletion mode semiconductor device F Udrea, L Efthymiou, G Longobardi, M Arnold US Patent 11,081,578, 2021 | 6 | 2021 |
| Power semiconductor device with an auxiliary gate structure F Udrea, L Efthymiou, G Longobardi US Patent 11,217,687, 2022 | 5 | 2022 |
| Power semiconductor device with an auxiliary gate structure M Arnold, L Efthymiou, F Udrea, G Longobardi, JW Findlay US Patent 11,955,478, 2024 | 4 | 2024 |
| Exceptional gate overvoltage robustness in P-gate GaN HEMT with integrated circuit interface B Wang, Q Song, K Mukherjee, L Efthymiou, D Popa, G Longobardi, ... 2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 761-766, 2024 | 4 | 2024 |
| Characterization of the novel ICeGaN 650V/8.5 A, 200 mΩ power device technology K Mukherjee, M Arnold, J Zhang, K Ledins, M Michalak, O Fung, ... Power Electronic Devices and Components 5, 100037, 2023 | 4 | 2023 |
Gianluca CamusoCambridge UniversityVerifierad e-postadress på cam.ac.uk