| Enhancement of the thermoelectric properties of PEDOT: PSS thin films by post-treatment J Luo, D Billep, T Waechtler, T Otto, M Toader, O Gordan, E Sheremet, ... Journal of Materials Chemistry A 1 (26), 7576-7583, 2013 | 383 | 2013 |
| Copper oxide films grown by atomic layer deposition from Bis (tri-n-butylphosphane) copper (I) acetylacetonate on Ta, TaN, Ru, and SiO2 T Waechtler, S Oswald, N Roth, A Jakob, H Lang, R Ecke, SE Schulz, ... Journal of The Electrochemical Society 156 (6), H453, 2009 | 121 | 2009 |
| ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems T Waechtler, SF Ding, L Hofmann, R Mothes, Q Xie, S Oswald, ... Microelectronic Engineering 88 (5), 684-689, 2011 | 69 | 2011 |
| New precursors for CVD copper metallization JAT Norman, M Perez, SE Schulz, T Waechtler Microelectronic Engineering 85 (10), 2159-2163, 2008 | 58 | 2008 |
| Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates NG Weimann, MJ Manfra, T Wachtler IEEE Electron Device Letters 24 (2), 57-59, 2003 | 52 | 2003 |
| Copper(I) Carboxylates of Type [(nBu3P)mCuO2CR] (m = 1, 2, 3) – Synthesis, Properties, and their Use as CVD Precursors A Jakob, Y Shen, T Waechtler, SE Schulz, T Gessner, R Riedel, C Fasel, ... Zeitschrift für anorganische und allgemeine Chemie 634 (12‐13), 2226-2234, 2008 | 34 | 2008 |
| Surface chemistry of a Cu (I) beta-diketonate precursor and the atomic layer deposition of Cu2O on SiO2 studied by x-ray photoelectron spectroscopy D Dhakal, T Waechtler, SE Schulz, T Gessner, H Lang, R Mothes, ... Journal of Vacuum Science & Technology A 32 (4), 2014 | 23 | 2014 |
| Copper Oxide ALD from a Cu (I)< beta>-Diketonate: Detailed Growth Studies on SiO2 and TaN T Waechtler, N Roth, R Mothes, S Schulze, SE Schulz, T Gessner, H Lang, ... ECS Transactions 25 (4), 277, 2009 | 23 | 2009 |
| [Ag{S2CNR(C2H4OH)}] as Single‐Source Precursor for Ag2S – Synthesis, Decomposition Mechanism, and Deposition Studies R Mothes, A Jakob, T Waechtler, SE Schulz, T Gessner, H Lang European Journal of Inorganic Chemistry 2015 (10), 1726-1733, 2015 | 21 | 2015 |
| Ruthenocenes and Half‐Open Ruthenocenes: Synthesis, Characterization, and Their Use as CVD Precursors for Ruthenium Thin Film Deposition A Tuchscherer, C Georgi, N Roth, D Schaarschmidt, T Rüffer, T Waechtler, ... European Journal of Inorganic Chemistry 2012 (30), 4867-4876, 2012 | 21 | 2012 |
| A cobalt layer deposition study: Dicobaltatetrahedranes as convenient MOCVD precursor systems C Georgi, A Hildebrandt, T Waechtler, SE Schulz, T Geßner, H Lang Journal of Materials Chemistry C 2 (23), 4676-4682, 2014 | 19 | 2014 |
| Disilver (I) Coordination Complexes: Synthesis, Reaction Chemistry, and Their Potential Use in CVD and Spin‐Coating Processes for Silver Deposition A Jakob, T Rüffer, H Schmidt, P Djiele, K Körbitz, P Ecorchard, T Haase, ... European Journal of Inorganic Chemistry 2010 (19), 2975-2986, 2010 | 19 | 2010 |
| Phosphane copper (I) complexes as CVD precursors N Roth, A Jakob, T Waechtler, SE Schulz, T Gessner, H Lang Surface and Coatings Technology 201 (22-23), 9089-9094, 2007 | 18 | 2007 |
| Atomic layer deposition of ultrathin Cu2O and subsequent reduction to Cu studied by in situ x-ray photoelectron spectroscopy D Dhakal, K Assim, H Lang, P Bruener, T Grehl, C Georgi, T Waechtler, ... Journal of Vacuum Science & Technology A 34 (1), 2016 | 17 | 2016 |
| nBu3P‐Silber (I)‐β‐Diketonate: Synthese, Gasphasenuntersuchungen und Verwendung als CVD‐Precursoren H Schmidt, A Jakob, T Haase, K Kohse‐Höinghaus, SE Schulz, ... Zeitschrift für anorganische und allgemeine Chemie 631 (13‐14), 2786-2791, 2005 | 15 | 2005 |
| Carbon nanotube based via interconnects: Performance estimation based on the resistance of individual carbon nanotubes H Fiedler, M Toader, S Hermann, RD Rodriguez, E Sheremet, M Rennau, ... Microelectronic engineering 120, 210-215, 2014 | 14 | 2014 |
| Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications M Melzer, T Waechtler, S Müller, H Fiedler, S Hermann, RD Rodriguez, ... Microelectronic engineering 107, 223-228, 2013 | 14 | 2013 |
| Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices T Wächtler Thomas Waechtler, 2010 | 13 | 2010 |
| Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems S Mueller, T Waechtler, L Hofmann, A Tuchscherer, R Mothes, O Gordan, ... 2011 Semiconductor Conference Dresden, 1-4, 2011 | 12 | 2011 |
| Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process C Georgi, M Hapke, I Thiel, A Hildebrandt, T Waechtler, SE Schulz, ... Thin Solid Films 578, 180-184, 2015 | 10 | 2015 |
Heinrich langVisiting professor of Chemistry in L.N. Gumilyov Eurasian UniversityVerifierad e-postadress på enu.kz
