| Ultralow-dielectric-constant amorphous boron nitride S Hong, CS Lee, MH Lee, Y Lee, KY Ma, G Kim, SI Yoon, K Ihm, KJ Kim, ... Nature 582 (7813), 511-514, 2020 | 296 | 2020 |
| Wafer-scale and wrinkle-free epitaxial growth of single-orientated multilayer hexagonal boron nitride on sapphire AR Jang, S Hong, C Hyun, SI Yoon, G Kim, HY Jeong, TJ Shin, SO Park, ... Nano letters 16 (5), 3360-3366, 2016 | 225 | 2016 |
| P-type electrical contacts for 2D transition-metal dichalcogenides Y Wang, JC Kim, Y Li, KY Ma, S Hong, M Kim, HS Shin, HY Jeong, ... Nature 610 (7930), 61-66, 2022 | 209 | 2022 |
| Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ... Acs Nano 12 (6), 6117-6127, 2018 | 166 | 2018 |
| Hexagonal boron nitride/Au substrate for manipulating surface plasmon and enhancing capability of surface-enhanced Raman spectroscopy G Kim, M Kim, C Hyun, S Hong, KY Ma, HS Shin, H Lim ACS nano 10 (12), 11156-11162, 2016 | 74 | 2016 |
| Planar and van der Waals heterostructures for vertical tunnelling single electron transistors G Kim, SS Kim, J Jeon, SI Yoon, S Hong, YJ Cho, A Misra, S Ozdemir, ... Nature communications 10 (1), 230, 2019 | 55 | 2019 |
| Nat. Commun. S Kim, S Kim, J Jeon, S Yoon, S Hong, YJ Cho, A Misra, S Ozdemir, J Yin, ... Nat. Commun 9, 2524, 2018 | 43 | 2018 |
| Reply to: On the measured dielectric constant of amorphous boron nitride S Hong, MH Lee, SW Kim, CS Lee, KY Ma, G Kim, SI Yoon, A Antidormi, ... Nature 590 (7844), E8-E10, 2021 | 21 | 2021 |
| Interconnect structure and electronic apparatus including the same S Hyeonjin, LEE Minhyun, C Lee, S Hyeonsuk, H Seokmo US Patent 11,462,477, 2022 | 4 | 2022 |
| Method of fabricating hexagonal boron nitride C Lee, S Hyeonsuk, S Hyeonjin, H Seokmo, MA Kyungyeol US Patent App. 16/885,887, 2021 | 3 | 2021 |
| Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer C Lee, S Hyeonsuk, S Hyeonjin, H Seokmo, LEE Minhyun, ... US Patent 11,624,127, 2023 | 1 | 2023 |
| Development of strain sensor using carbon nanotubes film SM Hong, HJ Lee, TH Han, KB Han, Y Choi International Journal of Engineering and Technology 4 (4), 413, 2012 | 1 | 2012 |
| Aligned Single Walled Carbon Nanotubes for Strain Sensor Y Choi, SM Hong, B Park International Journal of Advanced Science and Technology 36, 77-82, 2011 | 1 | 2011 |
| The effect of photodissociation of confined water on photoemission behaviors of monolayer MoS2 C Ahn, JG Ahn, S Hong, HW Kim, H Lim Applied Surface Science 663, 160157, 2024 | | 2024 |
| Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer C Lee, S Hyeonsuk, S Hyeonjin, H Seokmo, LEE Minhyun, ... US Patent App. 18/298,692, 2023 | | 2023 |
| Interconnect structure and electronic apparatus including the same S Hyeonjin, LEE Minhyun, C Lee, S Hyeonsuk, H Seokmo US Patent App. 17/902,319, 2022 | | 2022 |
| Semiconductor memory device and apparatus including the same S Hyeonjin, LEE Minhyun, C Lee, KE Byun, S Hyeonsuk, H Seokmo US Patent App. 17/893,349, 2022 | | 2022 |
| Semiconductor memory device and apparatus including the same S Hyeonjin, LEE Minhyun, C Lee, KE Byun, S Hyeonsuk, H Seokmo US Patent 11,424,186, 2022 | | 2022 |
