| Bulk planar junctionless transistor (BPJLT): An attractive device alternative for scaling S Gundapaneni, S Ganguly, A Kottantharayil IEEE Electron device letters 32 (3), 261-263, 2011 | 284 | 2011 |
| Effect of band-to-band tunneling on junctionless transistors S Gundapaneni, M Bajaj, RK Pandey, KVRM Murali, S Ganguly, ... IEEE Transactions on Electron Devices 59 (4), 1023-1029, 2012 | 256 | 2012 |
| Enhanced Electrostatic Integrity of Short-Channel Junctionless Transistor With High- Spacers S Gundapaneni, S Ganguly, A Kottantharayil IEEE Electron Device Letters 32 (10), 1325-1327, 2011 | 177 | 2011 |
| Graphene nanosheets derived from plastic waste for the application of DSSCs and supercapacitors S Pandey, M Karakoti, K Surana, PS Dhapola, B SanthiBhushan, ... Scientific reports 11 (1), 3916, 2021 | 114 | 2021 |
| Double-channel AlGaN/GaN high electron mobility transistor with back barriers A Kamath, T Patil, R Adari, I Bhattacharya, S Ganguly, RW Aldhaheri, ... IEEE electron device letters 33 (12), 1690-1692, 2012 | 79 | 2012 |
| Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs YK Yadav, BB Upadhyay, M Meer, N Bhardwaj, S Ganguly, D Saha IEEE Electron Device Letters 40 (1), 67-70, 2018 | 49 | 2018 |
| Band gap bowing and band offsets in relaxed and strained Si1− xGex alloys by employing a new nonlinear interpolation scheme S Sant, S Lodha, U Ganguly, S Mahapatra, FO Heinz, L Smith, V Moroz, ... Journal of Applied Physics 113 (3), 2013 | 48 | 2013 |
| Threshold voltage variability in nanosheet GAA transistors PH Vardhan, S Ganguly, U Ganguly IEEE Transactions on Electron Devices 66 (10), 4433-4438, 2019 | 47 | 2019 |
| Thermally Grown TiO2and Al2O3for GaN-Based MOS-HEMTs A Rawat, M Meer, V kumar Surana, N Bhardwaj, V Pendem, ... IEEE Transactions on Electron Devices 65 (9), 3725-3731, 2018 | 44 | 2018 |
| Realization of high quality silicon nitride deposition at low temperatures VK Surana, N Bhardwaj, A Rawat, Y Yadav, S Ganguly, D Saha Journal of Applied Physics 126 (11), 2019 | 33 | 2019 |
| Electrical spin injection using GaCrN in a GaN based spin light emitting diode D Banerjee, R Adari, S Sankaranarayan, A Kumar, S Ganguly, ... Applied Physics Letters 103 (24), 2013 | 33 | 2013 |
| Analytical estimation of threshold voltage variability by metal gate granularity in FinFET PH Vardhan, S Mittal, S Ganguly, U Ganguly IEEE Transactions on Electron Devices 64 (8), 3071-3076, 2017 | 31 | 2017 |
| Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric A Rawat, VK Surana, M Meer, N Bhardwaj, S Ganguly, D Saha IEEE Transactions on Electron Devices 66 (6), 2557-2562, 2019 | 26 | 2019 |
| Strong size dependency on the carrier and photon dynamics in InGaN/GaN single nanowalls determined using photoluminescence and ultrafast transient absorption spectroscopy S Chouksey, S Sankaranarayanan, V Pendem, PK Saha, S Ganguly, ... Nano Letters 17 (8), 4596-4603, 2017 | 23 | 2017 |
| Impact of relative gate position on DC and RF characteristics of high performance AlGaN/GaN HEMTs YK Yadav, BB Upadhyay, J Jha, S Ganguly, D Saha IEEE Transactions on Electron Devices 67 (10), 4141-4146, 2020 | 22 | 2020 |
| Reduced contact resistance and improved transistor performance by surface plasma treatment on ohmic regions in AlGaN/GaN HEMT heterostructures YK Yadav, BB Upadhyay, M Meer, S Ganguly, D Saha physica status solidi (a) 215 (9), 1700656, 2018 | 22 | 2018 |
| Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application R Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ... Applied Physics Letters 115 (6), 2019 | 20 | 2019 |
| State transitions and decoherence in the avian compass VS Poonia, D Saha, S Ganguly Physical Review E 91 (5), 052709, 2015 | 20 | 2015 |
| Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes S Ganguly, LF Register, S Banerjee, AH MacDonald Physical Review B—Condensed Matter and Materials Physics 71 (24), 245306, 2005 | 20 | 2005 |
| A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures J Ghosh, S Das, S Mukherjee, S Ganguly, A Laha Microelectronic Engineering 216, 111097, 2019 | 17 | 2019 |