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Lee Walsh
Lee Walsh
Marie Sklodowska-Curie postdoctoral fellow, Tyndall National Institute
Verifierad e-postadress på tyndall.ie
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van der Waals epitaxy: 2D materials and topological insulators
CLH Lee A. Walsh
Applied Materials Today 9, 504-515, 2017
2192017
Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides
R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ...
2D Materials 4 (4), 045019, 2017
1542017
Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3
LA Walsh, CM Smyth, AT Barton, Q Wang, Z Che, R Yue, J Kim, MJ Kim, ...
The Journal of Physical Chemistry C 121 (42), 23551-23563, 2017
1072017
W Te2 thin films grown by beam-interrupted molecular beam epitaxy
LA Walsh, R Yue, Q Wang, AT Barton, R Addou, CM Smyth, H Zhu, J Kim, ...
2D Materials 4 (2), 025044, 2017
572017
Spin coating of hydrophilic polymeric films for enhanced centrifugal flow control by serial siphoning
M Kitsara, CE Nwankire, L Walsh, G Hughes, M Somers, D Kurzbuch, ...
Microfluidics and nanofluidics 16, 691-699, 2014
552014
Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3
LA Walsh, AJ Green, R Addou, W Nolting, CR Cormier, AT Barton, ...
ACS nano 12 (6), 6310-6318, 2018
542018
Molecular Beam Epitaxy of Transition Metal Dichalcogenides
LA Walsh, R Addou, RM Wallace, CL Hinkle
Molecular Beam Epitaxy: From Research to Mass Production, 515-531, 2018
512018
Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
CM Smyth, LA Walsh, P Bolshakov, M Catalano, R Addou, L Wang, J Kim, ...
ACS Applied Nano Materials 2 (1), 75-88, 2018
412018
Dislocation driven spiral and non-spiral growth in layered chalcogenides: morphology, mechanism, and mitigation
Y Nie, A Barton, R Addou, Y Zheng, L Walsh, S Eichfeld, R Yue, ...
Nanoscale, 2018
412018
WSe (2− x) Tex alloys grown by molecular beam epitaxy
AT Barton, R Yue, LA Walsh, G Zhou, C Cormier, CM Smyth, R Addou, ...
2D Materials 6 (4), 045027, 2019
252019
Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality
J Lin, S Monaghan, N Sakhuja, F Gity, RK Jha, EM Coleman, J Connolly, ...
2D Materials 8 (2), 025008, 2020
232020
A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si (100) metal-oxide-semiconductor structures
LA Walsh, G Hughes, PK Hurley, J Lin, JC Woicik
Applied Physics Letters 101 (24), 2012
212012
Oxide-related defects in quantum dot containing Si-rich silicon nitride films
LA Walsh, S Mohammed, SC Sampat, YJ Chabal, AV Malko, CL Hinkle
Thin Solid Films 636, 267-272, 2017
172017
Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes
CM Smyth, LA Walsh, P Bolshakov, M Catalano, M Schmidt, B Sheehan, ...
2D Materials 6 (4), 045020, 2019
162019
Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation
G Mirabelli, LA Walsh, F Gity, S Bhattacharjee, CP Cullen, C Ó Coileáin, ...
ACS omega 4 (17), 17487-17493, 2019
132019
Molecular Beam Epitaxy
LA Walsh, R Addou, RM Wallace, CL Hinkle, M Henini
Elsevier, 2018
132018
In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applications
J Bogan, R Lundy, A P McCoy, R O'Connor, C Byrne, L Walsh, P Casey, ...
Journal of Applied Physics 120 (10), 2016
132016
Ni-(In, Ga) As alloy formation investigated by hard-X-ray photoelectron spectroscopy and X-ray absorption spectroscopy
LA Walsh, G Hughes, C Weiland, JC Woicik, RTP Lee, WY Loh, P Lysaght, ...
Physical Review Applied 2 (6), 064010, 2014
132014
Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/AlO/GaAs(100) metal-oxide-semiconductor structures
LA Walsh, G Hughes, J Lin, PK Hurley, TP O’Regan, E Cockayne, ...
Physical Review B—Condensed Matter and Materials Physics 88 (4), 045322, 2013
122013
Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3
AT Barton, LA Walsh, CM Smyth, X Qin, R Addou, C Cormier, PK Hurley, ...
ACS applied materials & interfaces 11 (35), 32144-32150, 2019
102019
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