van der Waals epitaxy: 2D materials and topological insulators CLH Lee A. Walsh Applied Materials Today 9, 504-515, 2017 | 219 | 2017 |
Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ... 2D Materials 4 (4), 045019, 2017 | 154 | 2017 |
Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3 LA Walsh, CM Smyth, AT Barton, Q Wang, Z Che, R Yue, J Kim, MJ Kim, ... The Journal of Physical Chemistry C 121 (42), 23551-23563, 2017 | 107 | 2017 |
W Te2 thin films grown by beam-interrupted molecular beam epitaxy LA Walsh, R Yue, Q Wang, AT Barton, R Addou, CM Smyth, H Zhu, J Kim, ... 2D Materials 4 (2), 025044, 2017 | 57 | 2017 |
Spin coating of hydrophilic polymeric films for enhanced centrifugal flow control by serial siphoning M Kitsara, CE Nwankire, L Walsh, G Hughes, M Somers, D Kurzbuch, ... Microfluidics and nanofluidics 16, 691-699, 2014 | 55 | 2014 |
Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3 LA Walsh, AJ Green, R Addou, W Nolting, CR Cormier, AT Barton, ... ACS nano 12 (6), 6310-6318, 2018 | 54 | 2018 |
Molecular Beam Epitaxy of Transition Metal Dichalcogenides LA Walsh, R Addou, RM Wallace, CL Hinkle Molecular Beam Epitaxy: From Research to Mass Production, 515-531, 2018 | 51 | 2018 |
Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts CM Smyth, LA Walsh, P Bolshakov, M Catalano, R Addou, L Wang, J Kim, ... ACS Applied Nano Materials 2 (1), 75-88, 2018 | 41 | 2018 |
Dislocation driven spiral and non-spiral growth in layered chalcogenides: morphology, mechanism, and mitigation Y Nie, A Barton, R Addou, Y Zheng, L Walsh, S Eichfeld, R Yue, ... Nanoscale, 2018 | 41 | 2018 |
WSe (2− x) Tex alloys grown by molecular beam epitaxy AT Barton, R Yue, LA Walsh, G Zhou, C Cormier, CM Smyth, R Addou, ... 2D Materials 6 (4), 045027, 2019 | 25 | 2019 |
Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality J Lin, S Monaghan, N Sakhuja, F Gity, RK Jha, EM Coleman, J Connolly, ... 2D Materials 8 (2), 025008, 2020 | 23 | 2020 |
A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si (100) metal-oxide-semiconductor structures LA Walsh, G Hughes, PK Hurley, J Lin, JC Woicik Applied Physics Letters 101 (24), 2012 | 21 | 2012 |
Oxide-related defects in quantum dot containing Si-rich silicon nitride films LA Walsh, S Mohammed, SC Sampat, YJ Chabal, AV Malko, CL Hinkle Thin Solid Films 636, 267-272, 2017 | 17 | 2017 |
Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes CM Smyth, LA Walsh, P Bolshakov, M Catalano, M Schmidt, B Sheehan, ... 2D Materials 6 (4), 045020, 2019 | 16 | 2019 |
Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation G Mirabelli, LA Walsh, F Gity, S Bhattacharjee, CP Cullen, C Ó Coileáin, ... ACS omega 4 (17), 17487-17493, 2019 | 13 | 2019 |
Molecular Beam Epitaxy LA Walsh, R Addou, RM Wallace, CL Hinkle, M Henini Elsevier, 2018 | 13 | 2018 |
In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applications J Bogan, R Lundy, A P McCoy, R O'Connor, C Byrne, L Walsh, P Casey, ... Journal of Applied Physics 120 (10), 2016 | 13 | 2016 |
Ni-(In, Ga) As alloy formation investigated by hard-X-ray photoelectron spectroscopy and X-ray absorption spectroscopy LA Walsh, G Hughes, C Weiland, JC Woicik, RTP Lee, WY Loh, P Lysaght, ... Physical Review Applied 2 (6), 064010, 2014 | 13 | 2014 |
Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/AlO/GaAs(100) metal-oxide-semiconductor structures LA Walsh, G Hughes, J Lin, PK Hurley, TP O’Regan, E Cockayne, ... Physical Review B—Condensed Matter and Materials Physics 88 (4), 045322, 2013 | 12 | 2013 |
Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3 AT Barton, LA Walsh, CM Smyth, X Qin, R Addou, C Cormier, PK Hurley, ... ACS applied materials & interfaces 11 (35), 32144-32150, 2019 | 10 | 2019 |