| Radiation damage formation and annealing in GaN and ZnO K Lorenz, M Peres, N Franco, JG Marques, SMC Miranda, S Magalhães, ... Oxide-Based Materials and Devices Ii 7940, 135-148, 2011 | 76 | 2011 |
| Magnetism in ar-implanted ZnO RP Borges, RC Da Silva, S Magalhaes, MM Cruz, M Godinho Journal of Physics: Condensed Matter 19 (47), 476207, 2007 | 53 | 2007 |
| Photoelectrochemical water splitting: Thermal annealing challenges on hematite nanowires P Quiterio, A Apolinario, D Navas, S Magalhaes, E Alves, A Mendes, ... The Journal of Physical Chemistry C 124 (24), 12897-12911, 2020 | 39 | 2020 |
| Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds DN Faye, E Wendler, M Felizardo, S Magalhães, E Alves, F Brunner, ... The Journal of Physical Chemistry C 120 (13), 7277-7283, 2016 | 38 | 2016 |
| Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11− 22) InGaN layers A Das, S Magalhaes, Y Kotsar, PK Kandaswamy, B Gayral, K Lorenz, ... Applied Physics Letters 96 (18), 2010 | 38 | 2010 |
| Determination of the 9Be (3He, pi) 11B (i= 0, 1, 2, 3) cross section at 135° in the energy range 1–2.5 MeV NP Barradas, N Catarino, R Mateus, S Magalhães, E Alves, Z Siketić, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015 | 30 | 2015 |
| Engineering strain and conductivity of MoO3 by ion implantation DR Pereira, C Díaz-Guerra, M Peres, S Magalhaes, JG Correia, ... Acta Materialia 169, 15-27, 2019 | 24 | 2019 |
| Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0. 15Ga0. 85N S Magalhães, M Fialho, M Peres, K Lorenz, E Alves Journal of Physics D: Applied Physics 49 (13), 135308, 2016 | 22 | 2016 |
| Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices DN Faye, M Fialho, S Magalhães, E Alves, NB Sedrine, J Rodrigues, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 21 | 2016 |
| Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation S Magalhães, M Peres, V Fellmann, B Daudin, AJ Neves, E Alves, ... Journal of Applied Physics 108 (8), 2010 | 20 | 2010 |
| Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1− xN (0⩽ x⩽ 1) alloys M Peres, S Magalhães, N Franco, MJ Soares, AJ Neves, E Alves, ... Microelectronics journal 40 (2), 377-380, 2009 | 18 | 2009 |
| Measuring strain caused by ion implantation in GaN P Mendes, K Lorenz, E Alves, S Schwaiger, F Scholz, S Magalhaes Materials Science in Semiconductor Processing 98, 95-99, 2019 | 17 | 2019 |
| RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO P Jozwik, S Magalhaes, R Ratajczak, C Mieszczynski, M Sequeira, ... physica status solidi (b) 256 (5), 1800364, 2019 | 17 | 2019 |
| Disorder induced violet/blue luminescence in rf‐deposited ZnO films M Peres, S Magalhães, MR Soares, MJ Soares, L Rino, E Alves, K Lorenz, ... physica status solidi c 10 (4), 662-666, 2013 | 16 | 2013 |
| Validity of Vegard’s rule for Al1− xInxN (0.08< x< 0.28) thin films grown on GaN templates S Magalhães, N Franco, IM Watson, RW Martin, KP O’Donnell, ... Journal of Physics D: Applied Physics 50 (20), 205107, 2017 | 15 | 2017 |
| Effect of AlN content on the lattice site location of terbium ions in AlxGa1− xN compounds M Fialho, J Rodrigues, S Magalhães, MR Correia, T Monteiro, K Lorenz, ... Semiconductor Science and Technology 31 (3), 035026, 2016 | 15 | 2016 |
| Al1−xInxN/GaN bilayers: Structure, morphology, and optical properties K Lorenz, S Magalhaes, N Franco, NP Barradas, V Darakchieva, E Alves, ... physica status solidi (b) 247 (7), 1740-1746, 2010 | 15 | 2010 |
| Molybdenum oxide thin films grown on flexible ITO-coated PET substrates A Marciel, M Graça, A Bastos, L Pereira, J Suresh Kumar, J Borges, F Vaz, ... Materials 14 (4), 821, 2021 | 14 | 2021 |
| Ar+ ion irradiation of magnetic tunnel junction multilayers: impact on the magnetic and electrical properties BMS Teixeira, AA Timopheev, N Caçoilo, L Cuchet, J Mondaud, ... Journal of Physics D: Applied Physics 53 (45), 455003, 2020 | 13 | 2020 |
| Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium M Fialho, S Magalhães, MP Chauvat, P Ruterana, K Lorenz, E Alves Journal of Applied Physics 120 (16), 2016 | 13 | 2016 |
