| Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs A Jaksic, G Ristic, M Pejovic, A Mohammadzadeh, C Sudre, W Lane IEEE Transactions on Nuclear Science 49 (3), 1356-1363, 2002 | 97 | 2002 |
| Radiochemistry on chip: towards dose-on-demand synthesis of PET radiopharmaceuticals V Arima, G Pascali, O Lade, HR Kretschmer, I Bernsdorf, V Hammond, ... Lab on a Chip 13 (12), 2328-2336, 2013 | 79 | 2013 |
| Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs A Haran, A Jaksic, N Refaeli, A Eliyahu, D David, J Barak IEEE Transactions on Nuclear Science 51 (5), 2917-2921, 2004 | 59 | 2004 |
| The technology demonstration module on-board PROBA-II R Harboe-Sorensen, C Poivey, N Fleurinck, K Puimege, A Zadeh, ... IEEE Transactions on Nuclear Science 58 (3), 1001-1007, 2010 | 58 | 2010 |
| The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy (Si) GS Ristić, ND Vasović, M Kovačević, AB Jakšić Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011 | 57 | 2011 |
| Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature MM Pejovic, MM Pejovic, AB Jaksic Sensors and Actuators A: Physical 174, 85-90, 2012 | 54 | 2012 |
| Using RADFET for the real-time measurement of gamma radiation dose rate MS Andjelković, GS Ristić, AB Jakšić Measurement Science and Technology 26 (2), 025004, 2015 | 42 | 2015 |
| Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing GS Ristic, MM Pejovic, AB Jaksic Journal of applied physics 83 (6), 2994-3000, 1998 | 42 | 1998 |
| pMOS dosimetric transistors with two-layer gate oxide G Ristić, A Jakšić, M Pejović Sensors and Actuators A: Physical 63 (2), 129-134, 1997 | 40 | 1997 |
| Investigation of RadFET response to X-ray and electron beams E Yilmaz, A Kahraman, AM McGarrigle, N Vasovic, D Yegen, A Jaksic Applied Radiation and Isotopes 127, 156-160, 2017 | 34 | 2017 |
| Analysis of postirradiation annealing of n-channel power vertical double-diffused metal–oxide–semiconductor transistors GS Ristić, MM Pejović, AB Jakšić Journal of Applied Physics 87 (7), 3468-3477, 2000 | 33 | 2000 |
| Latent interface-trap generation in commercial power VDMOSFETs A Jaksic, M Pejovic, G Ristic, S Rakovic IEEE Transactions on Nuclear Science 45 (3), 1365-1371, 1998 | 33 | 1998 |
| Heavy-ion induced charge yield in MOSFETs A Javanainen, JR Schwank, MR Shaneyfelt, R Harboe-Sorensen, ... IEEE Transactions on Nuclear Science 56 (6), 3367-3371, 2009 | 32 | 2009 |
| Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress GS Ristić, MM Pejović, AB Jakšić Journal of non-crystalline solids 353 (2), 170-179, 2007 | 32 | 2007 |
| Characterisation of radiation response of 400 nm implanted gate oxide RADFETs A Jaksic, G Ristic, M Pejovic, A Mohammadzadeh, W Lane 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No …, 2002 | 32 | 2002 |
| Successive gamma-ray irradiation and corresponding post-irradiation annealing of pMOS dosimeters MM Pejović, MM Pejović, AB Jakšić, KĐ Stanković, SA Marković Nuclear Technology and Radiation Protection 27 (4), 341-345, 2012 | 30 | 2012 |
| Response to ionizing radiation of different biased and stacked pMOS structures MS Martínez-García, JT del Río, A Jaksic, J Banqueri, MA Carvajal Sensors and Actuators A: Physical 252, 67-75, 2016 | 27 | 2016 |
| Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs GS Ristić, MM Pejović, AB Jakšić Applied surface science 220 (1-4), 181-185, 2003 | 27 | 2003 |
| Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing M Pejović, G Ristić, A Jakšić Applied surface science 108 (1), 141-148, 1997 | 27 | 1997 |
| Radiation-sensitive field effect transistor response to gamma-ray irradiation MM Pejović, MM Pejović, AB Jakšić Nuclear Technology and Radiation Protection 26 (1), 25-31, 2011 | 26 | 2011 |
