| A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications L Mazet, SM Yang, SV Kalinin, S Schamm-Chardon, C Dubourdieu Science and technology of advanced materials 16 (3), 036005, 2015 | 145 | 2015 |
| Structural characterization of amorphous chemical vapor deposited coatings A Bendeddouche, R Berjoan, E Beche, T Merle-Mejean, S Schamm, ... Journal of Applied Physics 81 (9), 6147-6154, 1997 | 139 | 1997 |
| Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS S Schamm, C Bonafos, H Coffin, N Cherkashin, M Carrada, GB Assayag, ... Ultramicroscopy 108 (4), 346-357, 2008 | 105 | 2008 |
| Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2 F Loumagne, F Langlais, R Naslain, S Schamm, D Dorignac, J Sévely Thin Solid Films 254 (1-2), 75-82, 1995 | 71 | 1995 |
| Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ... Journal of applied physics 99 (4), 2006 | 64 | 2006 |
| Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology T Müller, KH Heinig, W Möller, C Bonafos, H Coffin, N Cherkashin, ... Applied physics letters 85 (12), 2373-2375, 2004 | 63 | 2004 |
| Study of the dielectric properties near the band gap by VEELS: gap measurement in bulk materials S Schamm, G Zanchi Ultramicroscopy 96 (3-4), 559-564, 2003 | 61 | 2003 |
| Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, ... Microelectronic Engineering 85 (12), 2411-2413, 2008 | 55 | 2008 |
| The energy band alignment of Si nanocrystals in SiO2 G Seguini, S Schamm-Chardon, P Pellegrino, M Perego Applied Physics Letters 99 (8), 2011 | 53 | 2011 |
| Correlations between gas phase supersaturation, nucleation process and physico-chemical characteristics of silicon carbide deposited from Si-CH-Cl system on silica substrates D Lespiaux, F Langlais, R Naslain, S Schamm, J Sevely Journal of materials science 30, 1500-1510, 1995 | 51 | 1995 |
| The K2ZrF6 wetting process: Effect of surface chemistry on the ability of a SiC-Fiber preform to be impregnated by aluminum S Schamm, R Fedou, JP Rocher, JM Quenisset, R Naslain Metallurgical Transactions A 22, 2133-2139, 1991 | 51 | 1991 |
| Si and Ge nanocrystals for future memory devices C Bonafos, M Carrada, G Benassayag, S Schamm-Chardon, J Groenen, ... Materials Science in Semiconductor Processing 15 (6), 615-626, 2012 | 50 | 2012 |
| Dielectric properties of Er− doped HfO2 (Er∼ 15%) grown by atomic layer deposition for high-κ gate stacks C Wiemer, L Lamagna, S Baldovino, M Perego, S Schamm-Chardon, ... Applied Physics Letters 96 (18), 2010 | 49 | 2010 |
| Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon G Seguini, C Castro, S Schamm-Chardon, G Benassayag, P Pellegrino, ... Applied Physics Letters 103 (2), 2013 | 46 | 2013 |
| Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications C Bonafos, H Coffin, S Schamm, N Cherkashin, GB Assayag, P Dimitrakis, ... Solid-State Electronics 49 (11), 1734-1744, 2005 | 45 | 2005 |
| Atomic layer deposition of LaxZr1− xO2− δ (x= 0.25) high-k dielectrics for advanced gate stacks D Tsoutsou, L Lamagna, SN Volkos, A Molle, S Baldovino, S Schamm, ... Applied Physics Letters 94 (5), 2009 | 43 | 2009 |
| O3-based atomic layer deposition of hexagonal La2O3 films on Si (100) and Ge (100) substrates L Lamagna, C Wiemer, M Perego, SN Volkos, S Baldovino, D Tsoutsou, ... Journal of Applied Physics 108 (8), 2010 | 39 | 2010 |
| Chemical/Structural nanocharacterization and electrical properties of ALD-Grown La2O3∕ Si interfaces for advanced gate stacks S Schamm, PE Coulon, S Miao, SN Volkos, LH Lu, L Lamagna, C Wiemer, ... Journal of The Electrochemical Society 156 (1), H1, 2008 | 38 | 2008 |
| Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors M Brunet, HM Kotb, L Bouscayrol, E Scheid, M Andrieux, C Legros, ... Thin solid films 519 (16), 5638-5644, 2011 | 36 | 2011 |
| Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge (100) L Lamagna, C Wiemer, S Baldovino, A Molle, M Perego, ... Applied Physics Letters 95 (12), 2009 | 36 | 2009 |
