| Room temperature operation of epitaxially grown resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ... Applied Physics Letters 73 (15), 2191-2193, 1998 | 209 | 1998 |
| Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope JH Jang, W Zhao, JW Bae, D Selvanathan, SL Rommel, I Adesida, ... Applied physics letters 83 (20), 4116-4118, 2003 | 97 | 2003 |
| Effect of on the etch profile of InP/InGaAsP alloys in inductively coupled plasma reactive ion etching chemistries for photonic device fabrication SL Rommel, JH Jang, W Lu, G Cueva, L Zhou, I Adesida, G Pajer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 85 | 2002 |
| Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts C Rivas, R Lake, G Klimeck, WR Frensley, MV Fischetti, PE Thompson, ... Applied Physics Letters 78 (6), 814-816, 2001 | 80 | 2001 |
| Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR N Jin, SY Chung, RM Heyns, PR Berger, R Yu, PE Thompson, ... IEEE electron device letters 25 (9), 646-648, 2004 | 76 | 2004 |
| Si-based resonant interband tunneling diodes and method of making interband tunneling diodes PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel US Patent 6,803,598, 2004 | 75 | 2004 |
| Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ... IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000 | 73 | 2000 |
| Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ... Solid-State Electronics 48 (10-11), 1907-1910, 2004 | 62 | 2004 |
| Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ... IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003 | 61 | 2003 |
| Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration SY Chung, N Jin, PR Berger, R Yu, PE Thompson, R Lake, SL Rommel, ... Applied physics letters 84 (14), 2688-2690, 2004 | 45 | 2004 |
| Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy PE Thompson, KD Hobart, ME Twigg, GG Jernigan, TE Dillon, ... Applied physics letters 75 (9), 1308-1310, 1999 | 44 | 1999 |
| Full band modeling of the excess current in a delta-doped silicon tunnel diode C Rivas, R Lake, WR Frensley, G Klimeck, PE Thompson, KD Hobart, ... Journal of Applied Physics 94 (8), 5005-5013, 2003 | 43 | 2003 |
| Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities SL Rommel, TE Dillon, PR Berger, PE Thompson, KD Hobart, R Lake, ... IEEE Electron Device Letters 20 (7), 329-331, 1999 | 43 | 1999 |
| Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current D Pawlik, B Romanczyk, P Thomas, S Rommel, M Edirisooriya, ... 2012 International Electron Devices Meeting, 27.1. 1-27.1. 3, 2012 | 38 | 2012 |
| Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing WS Cho, M Luisier, D Mohata, S Datta, D Pawlik, SL Rommel, G Klimeck Applied Physics Letters 100 (6), 2012 | 28 | 2012 |
| Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping SL Rommel, D Pawlik, P Thomas, M Barth, K Johnson, SK Kurinec, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 27 | 2008 |
| “p-on-n” Si interband tunnel diode grown by molecular beam epitaxy KD Hobart, PE Thompson, SL Rommel, TE Dillon, PR Berger, DS Simons, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 26 | 2001 |
| Epitaxial Si-based tunnel diodes PE Thompson, KD Hobart, ME Twigg, SL Rommel, N Jin, PR Berger, ... Thin Solid Films 380 (1-2), 145-150, 2000 | 26 | 2000 |
| Si-based interband tunneling devices for high-speed logic and low power memory applications SL Rommel, TE Dillon, PR Berger, R Lake, PE Thompson, KD Hobart, ... International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 24 | 1998 |
| 1.3 μm photoresponsivity in Si-based photodiodes X Shao, SL Rommel, BA Orner, H Feng, MW Dashiell, RT Troeger, ... Applied physics letters 72 (15), 1860-1862, 1998 | 24 | 1998 |
Paul R. BergerProfessor of Electrical and Computer Engineering, Ohio State UniversityVerifierad e-postadress på ieee.org
