| Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys A Attiaoui, O Moutanabbir Journal of Applied Physics 116 (6), 063712, 2014 | 90 | 2014 |
| All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors MRM Atalla, S Assali, A Attiaoui, C Lemieux‐Leduc, A Kumar, S Abdi, ... Advanced Functional Materials 31 (3), 2006329, 2021 | 83 | 2021 |
| High-bandwidth extended-SWIR GeSn photodetectors on silicon achieving ultrafast broadband spectroscopic response MRM Atalla, S Assali, S Koelling, A Attiaoui, O Moutanabbir ACS Photonics 9 (4), 1425-1433, 2022 | 67 | 2022 |
| Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ... Physical Review Applied 13 (4), 044062, 2020 | 41 | 2020 |
| Dark current in monolithic extended-SWIR GeSn PIN photodetectors MRM Atalla, S Assali, S Koelling, A Attiaoui, O Moutanabbir Applied Physics Letters 122 (3), 2023 | 24 | 2023 |
| Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Semiconductors S Assali, A Dijkstra, A Attiaoui, É Bouthillier, JEM Haverkort, ... Physical Review Applied 15 (2), 024031, 2021 | 22 | 2021 |
| Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires L Luo, S Assali, MRM Atalla, S Koelling, A Attiaoui, G Daligou, S Martí, ... ACS Photonics 9 (3), 914-921, 2022 | 18 | 2022 |
| Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon G Daligou, R Soref, A Attiaoui, J Hossain, MRM Atalla, P Del Vecchio, ... IEEE Journal of Photovoltaics, 2023 | 11 | 2023 |
| Polarization‐Tuned Fano Resonances in All‐Dielectric Short‐Wave Infrared Metasurface A Attiaoui, G Daligou, S Assali, O Skibitzki, T Schroeder, O Moutanabbir Advanced Materials, 2300595, 2023 | 11 | 2023 |
| Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays A Attiaoui, É Bouthillier, G Daligou, A Kumar, S Assali, O Moutanabbir Physical Review Applied 15 (1), 014034, 2021 | 10 | 2021 |
| 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices S Mukherjee, A Attiaoui, M Bauer, O Moutanabbir ACS Applied Materials & Interfaces 12 (1), 1728-1736, 2019 | 10 | 2019 |
| Extreme IR absorption in group IV-SiGeSn core-shell nanowires A Attiaoui, S Wirth, AP Blanchard-Dionne, M Meunier, JM Hartmann, ... Journal of Applied Physics 123 (22), 223102, 2018 | 10 | 2018 |
| Continuous-wave GeSn light emitting diodes on silicon with m room-temperature emission MRM Atalla, S Assali, G Daligou, A Attiaoui, S Koelling, P Daoust, ... arXiv preprint arXiv:2310.00225, 2023 | 8 | 2023 |
| A Light‐Hole Germanium Quantum Well on Silicon S Assali, A Attiaoui, PD Vecchio, S Mukherjee, J Nicolas, O Moutanabbir Advanced Materials 34 (27), 2201192, 2022 | 8 | 2022 |
| Combined Iodine-and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface L Groell, A Attiaoui, S Assali, O Moutanabbir The Journal of Physical Chemistry C 125 (17), 9516-9525, 2021 | 8 | 2021 |
| Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale S Koelling, S Assali, M Atalla, A Kumar, A Attiaoui, M Lodari, A Sammak, ... ECS Transactions 98 (5), 447, 2020 | 6 | 2020 |
| Radiative carrier lifetime in midinfrared emitters G Daligou, A Attiaoui, S Assali, P Del Vecchio, O Moutanabbir Physical Review Applied 20 (6), 064001, 2023 | 4 | 2023 |
| 500-period epitaxial Ge/Si0. 18Ge0. 82 multi-quantum wells on silicon S Assali, S Koelling, Z Abboud, J Nicolas, A Attiaoui, O Moutanabbir Journal of Applied Physics 132 (17), 2022 | 4 | 2022 |
| Optical and electronic propreties of GeSn and GeSiSn heterostructures and nanowires A Attiaoui, O Moutanabbir ECS Transactions 64 (6), 869, 2014 | 4 | 2014 |
| Nuclear Spin-Depleted, Isotopically Enriched Ge/SiGe Quantum Wells O Moutanabbir, S Assali, A Attiaoui, G Daligou, P Daoust, P Del Vecchio, ... arXiv preprint arXiv:2306.04052, 2023 | 3* | 2023 |
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