Vincenzo Fiorentini

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Alessio FilippettiCNR-IOM and University of CagliariVerifierad e-postadress på dsf.unica.it
Pietro DelugasSISSAVerifierad e-postadress på sissa.it
David VanderbiltProfessor of Physics and Astronomy, Rutgers UniversityVerifierad e-postadress på physics.rutgers.edu
Matthias SchefflerDirector of NOMAD Laboratory at FHI of Max-Planck-GesellschaftVerifierad e-postadress på fhi-berlin.mpg.de
Maria Barbara MaccioniDepartment of Physics, University of PaviaVerifierad e-postadress på unipv.it
Andrea BosinPhysics Department, Universita' di Cagliari, ItalyVerifierad e-postadress på dsf.unica.it
Paolo RuggeroneFull Professor of Applied Physics, University of CagliariVerifierad e-postadress på dsf.unica.it
Paolo LugliFree University of Bozen-BolzanoVerifierad e-postadress på unibz.it
Fabio Della SalaCNR-IMM and IITVerifierad e-postadress på le.imm.cnr.it
Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgVerifierad e-postadress på inatech.uni-freiburg.de
Aldo Di CarloProf. of Opto&Nano-electronics, University of Rome Tor Vergata. Consiglio Nazionale delle RicercheVerifierad e-postadress på uniroma2.it
Giancarlo CappelliniDipartimento di Fisica, Università di CagliariVerifierad e-postadress på dsf.unica.it
Paola AlippiCNRVerifierad e-postadress på cnr.it
Danilo PuggioniNorthwestern UniversityVerifierad e-postadress på northwestern.edu
Martin StutzmannProfessor (retired) of Experimental Physics, Walter Schottky Institut, TU MünchenVerifierad e-postadress på tum.de
geoffrey pourtoisimecVerifierad e-postadress på imec.be
Carlo Maria CarbonaroProfessore Associato di Fisica, Dipartimento di Fisica, Università di CagliariVerifierad e-postadress på dsf.unica.it

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Vincenzo Fiorentini

Associate professor, condensed matter physics, University of Cagliari, Italy

Verifierad e-postadress på dsf.unica.it - Startsida

Physics Condensed matter theory magnetism nanoelectronics


Titel Sortera efter citat Sortera efter år Sortera efter titel	Citeras av Citeras av	År
Spontaneous polarization and piezoelectric constants of III-V nitrides F Bernardini, V Fiorentini, D Vanderbilt Physical Review B 56 (16), R10024, 1997	4003	1997
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1437	2002
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures V Fiorentini, F Bernardini, O Ambacher Applied physics letters 80 (7), 1204-1206, 2002	1051	2002
Effects of macroscopic polarization in III-V nitride multiple quantum wells V Fiorentini, F Bernardini, F Della Sala, A Di Carlo, P Lugli Physical Review B 60 (12), 8849, 1999	700	1999
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local … A Zoroddu, F Bernardini, P Ruggerone, V Fiorentini Physical Review B 64 (4), 045208, 2001	624	2001
Macroscopic polarization and band offsets at nitride heterojunctions F Bernardini, V Fiorentini Physical Review B 57 (16), R9427, 1998	551	1998
Extracting convergent surface energies from slab calculations V Fiorentini, M Methfessel Journal of Physics: Condensed Matter 8 (36), 6525, 1996	520	1996
Nonlinear macroscopic polarization in III-V nitride alloys F Bernardini, V Fiorentini Physical Review B 64 (8), 085207, 2001	440	2001
Spontaneous versus piezoelectric polarization in III–V nitrides: conceptual aspects and practical consequences F Bernardini, V Fiorentini physica status solidi (b) 216 (1), 391-398, 1999	423	1999
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures F Della Sala, A Di Carlo, P Lugli, F Bernardini, V Fiorentini, R Scholz, ... Applied physics letters 74 (14), 2002-2004, 1999	395	1999
Reconstruction mechanism of fcc transition metal (001) surfaces V Fiorentini, M Methfessel, M Scheffler Physical review letters 71 (7), 1051, 1993	318	1993
Accurate calculation of polarization-related quantities in semiconductors F Bernardini, V Fiorentini, D Vanderbilt Physical Review B 63 (19), 193201, 2001	302	2001
Polarization-based calculation of the dielectric tensor of polar crystals F Bernardini, V Fiorentini, D Vanderbilt Physical review letters 79 (20), 3958, 1997	299	1997
Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons V Fiorentini, M Methfessel, M Scheffler Physical Review B 47 (20), 13353, 1993	260	1993
Spontaneous 2-Dimensional Carrier Confinement at the -Type Interface P Delugas, A Filippetti, V Fiorentini, DI Bilc, D Fontaine, P Ghosez Physical review letters 106 (16), 166807, 2011	253	2011
Theoretical evaluation of zirconia and hafnia as gate oxides for Si microelectronics V Fiorentini, G Gulleri Physical review letters 89 (26), 266101, 2002	205	2002
Dielectric scaling of the self-energy scissor operator in semiconductors and insulators V Fiorentini, A Baldereschi Physical Review B 51 (23), 17196, 1995	193	1995
Phase diagram and polarization of stable phases of (Ga1− xInx) 2O3 MB Maccioni, V Fiorentini Applied physics express 9 (4), 041102, 2016	172	2016
Theory of adsorption and surfactant effect of Sb on Ag (111) S Oppo, V Fiorentini, M Scheffler Physical review letters 71 (15), 2437, 1993	167	1993
First-principles calculation of the piezoelectric tensor of III–V nitrides F Bernardini, V Fiorentini Applied physics letters 80 (22), 4145-4147, 2002	162	2002

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