| Method for fabricating a semiconductor structure including a metal oxide interface with silicon J Ramdani, R Droopad, Z Yu US Patent 6,709,989, 2004 | 663 | 2004 |
| Field effect transistors with gate dielectric on Si K Eisenbeiser, JM Finder, Z Yu, J Ramdani, JA Curless, JA Hallmark, ... Applied Physics Letters 76 (10), 1324-1326, 2000 | 443 | 2000 |
| Epitaxial BiFeO3 thin films on Si J Wang, H Zheng, Z Ma, S Prasertchoung, M Wuttig, R Droopad, J Yu, ... Applied Physics Letters 85 (13), 2574-2576, 2004 | 325 | 2004 |
| Band discontinuities at epitaxial heterojunctions SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani, K Eisenbeiser Applied Physics Letters 77 (11), 1662-1664, 2000 | 280 | 2000 |
| Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μm RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ... IEEE Electron Device Letters 28 (12), 1080-1082, 2007 | 230 | 2007 |
| Epitaxial oxide thin films on Si (001) Z Yu, J Ramdani, JA Curless, CD Overgaard, JM Finder, R Droopad, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 198 | 2000 |
| Two-dimensional growth of high-quality strontium titanate thin films on Si H Li, X Hu, Y Wei, Z Yu, X Zhang, R Droopad, AA Demkov, J Edwards Jr, ... Journal of Applied Physics 93 (8), 4521-4525, 2003 | 186 | 2003 |
| Low leakage current metal oxide-nitrides and method of fabricating same Z Yu, R Droopad, C Overgaard, J Edwards US Patent App. 09/755,691, 2002 | 184 | 2002 |
| Epitaxial ferroelectric thin films on Si using template layers Y Wang, C Ganpule, BT Liu, H Li, K Mori, B Hill, M Wuttig, R Ramesh, ... Applied Physics Letters 80 (1), 97-99, 2002 | 184 | 2002 |
| Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors S Ghose, S Rahman, L Hong, JS Rojas-Ramirez, H Jin, K Park, R Klie, ... Journal of Applied Physics 122 (9), 2017 | 174 | 2017 |
| Semiconductor structure Z Yu, J Ramdani, R Droopad US Patent 6,501,121, 2002 | 166 | 2002 |
| Band offset and structure of heterojunctions SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (3 …, 2001 | 164 | 2001 |
| Electro-optic structure and process for fabricating same J Ramdani, L Hilt, R Droopad, WJ Ooms US Patent 6,493,497, 2002 | 161 | 2002 |
| Optical properties of bulk and thin-film on Si and Pt S Zollner, AA Demkov, R Liu, PL Fejes, RB Gregory, P Alluri, JA Curless, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 158 | 2000 |
| Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si V Nagarajan, A Stanishevsky, L Chen, T Zhao, BT Liu, J Melngailis, ... Applied physics letters 81 (22), 4215-4217, 2002 | 152 | 2002 |
| Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline films Y Wei, X Hu, Y Liang, DC Jordan, B Craigo, R Droopad, Z Yu, A Demkov, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 146 | 2002 |
| Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same J Ramdani, R Droopad, LL Hilt, KW Eisenbeiser US Patent 6,392,257, 2002 | 124 | 2002 |
| Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor M Passlack, JK Abrokwah, R Droopad, Z Yu, C Overgaard, SI Yi, M Hale, ... IEEE Electron Device Letters 23 (9), 508-510, 2002 | 121 | 2002 |
| GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer K Eisenbeiser, R Emrick, R Droopad, Z Yu, J Finder, S Rockwell, ... IEEE Electron Device Letters 23 (6), 300-302, 2002 | 121 | 2002 |
| The interface of epitaxial on silicon: in situ and ex situ studies X Hu, H Li, Y Liang, Y Wei, Z Yu, D Marshall, J Edwards Jr, R Droopad, ... Applied physics letters 82 (2), 203-205, 2003 | 117 | 2003 |
