SHAO-YU CHEN

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Medförfattare

Jun YanAssociate Professor of Physics, University of Massachusetts AmherstVerifierad e-postadress på physics.umass.edu
Kenji WatanabeNational Institute for Materials ScienceVerifierad e-postadress på nims.go.jp
Michael S. FuhrerSchool of Physics, Monash University; Department of Physics, University of MarylandVerifierad e-postadress på monash.edu
Chun-Wei ChenProfessor of Materials Science and Engineering, National Taiwan UniversityVerifierad e-postadress på ntu.edu.tw
Jiayue TongAmazonVerifierad e-postadress på physics.umass.edu
Po-Hsun HoTaiwan Semiconductor Manufacturing CompanyVerifierad e-postadress på tsmc.com
takeshi taniguchikurume universityVerifierad e-postadress på kurume-u.ac.jp
Ashwin RamasubramaniamProfessor, Mechanical & Industrial Engineering, University of Massachusetts AmherstVerifierad e-postadress på engin.umass.edu
T.TaniguchiNational Institute for Materials ScienceVerifierad e-postadress på nims.go.jp
Yueh-Chun WuOak Ridge National LaboratoryVerifierad e-postadress på ornl.gov
Sigfrid YngvessonProfessor Emeritus University of Massachusetts AmherstVerifierad e-postadress på ecs.umass.edu
Chi-Te LiangProfessor of Physics, National Taiwan UniversityVerifierad e-postadress på phys.ntu.edu.tw
Zhengguang LuMassachusetts Institute of TechnologyVerifierad e-postadress på mit.edu
Yi-Hsun ChenSchool of Mathematics and Physics, University of QueenslandVerifierad e-postadress på uq.edu.au
Elena OstrovskayaAustralian National UniversityVerifierad e-postadress på anu.edu.au
Eliezer EstrechoThe Australian National UniversityVerifierad e-postadress på anu.edu.au
Maciej PieczarkaWroclaw University of Science and TechnologyVerifierad e-postadress på pwr.edu.pl
Changxi ZhengWestlake UniversityVerifierad e-postadress på westlake.edu.cn
Yang-Fang ChenProfessor of Physics, National Taiwan University, Taipei, TaiwanVerifierad e-postadress på phys.ntu.edu.tw
Dhandapani VenkataramanProfessor of Chemistry, University of MassachusettsVerifierad e-postadress på umass.edu

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SHAO-YU CHEN

National Taiwan University

Verifierad e-postadress på ntu.edu.tw

Experimental condensed matter physics 2D materials Spectroscopy


Titel Sortera efter citat Sortera efter år Sortera efter titel	Citeras av Citeras av	År
Helicity-Resolved Raman Scattering of MoS2, MoSe2, WS2, and WSe2 Atomic Layers SY Chen, C Zheng, MS Fuhrer, J Yan Nano letters 15 (4), 2526-2532, 2015	331	2015
Coulomb-bound four-and five-particle intervalley states in an atomically-thin semiconductor SY Chen, T Goldstein, T Taniguchi, K Watanabe, J Yan Nature communications 9 (1), 3717, 2018	200	2018
Antenna enhanced graphene thz emitter and detector J Tong, M Muthee, SY Chen, SK Yngvesson, J Yan Nano Letters 15 (8), 5295–5301, 2015	181	2015
Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors YC Wu, CH Liu, SY Chen, FY Shih, PH Ho, CW Chen, CT Liang, ... Scientific Reports 5 (11472), 2015	149	2015
Activation of New Raman Modes by Inversion Symmetry Breaking in Type II Weyl Semimetal Candidate T′-MoTe2 SY Chen, T Goldstein, D Venkataraman, A Ramasubramaniam, J Yan Nano Letters 16 (9), 5852-5860, 2016	134	2016
Biologically inspired graphene-chlorophyll phototransistors with high gain SY Chen, YY Lu, FY Shih, PH Ho, YF Chen, CW Chen, YT Chen, ... Carbon 63, 23-29, 2013	123	2013
Ultrathin Ga₂O₃ Glass: A Large‐Scale Passivation and Protection Material for Monolayer WS₂ M Wurdack, T Yun, E Estrecho, N Syed, S Bhattacharyya, M Pieczarka, ... Advanced Materials 33 (3), 2005732, 2021	82	2021
Luminescent Emission of Excited Rydberg Excitons from Monolayer WSe₂ SY Chen, Z Lu, T Goldstein, J Tong, A Chaves, J Kunstmann, ... Nano letters 19 (4), 2464-2471, 2019	74	2019
Transport/magnetotransport of high-performance graphene transistors on organic molecule-functionalized substrates SY Chen, PH Ho, RJ Shiue, CW Chen, WH Wang Nano letters 12 (2), 964-969, 2012	69	2012
Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers T Goldstein, SY Chen, D Xiao, A Ramasubramaniam, J Yan Scientific Reports 6 (28024), 2016	61	2016
Ground and excited state exciton polarons in monolayer MoSe2 T Goldstein, YC Wu, SY Chen, T Taniguchi, K Watanabe, K Varga, J Yan The Journal of Chemical Physics 153 (7), 2020	58	2020
Superior Valley Polarization and Coherence of Excitons in Monolayer SY Chen, T Goldstein, J Tong, T Taniguchi, K Watanabe, J Yan Physical review letters 120 (4), 046402, 2018	58	2018
Intrinsic Phonon Bands in High-Quality Monolayer T′ Molybdenum Ditelluride SY Chen, CH Naylor, T Goldstein, ATC Johnson, J Yan ACS nano 11 (1), 814-820, 2017	53	2017
Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors YH Chen, CY Cheng, SY Chen, JSD Rodriguez, HT Liao, K Watanabe, ... npj 2D Materials and Applications 3 (1), 49, 2019	30	2019
Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask FY Shih, SY Chen, CH Liu, PH Ho, TS Wu, CW Chen, YF Chen, WH Wang AIP Advances 4 (6), 2014	18	2014
Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors CY Cheng, WL Pai, YH Chen, NT Paylaga, PY Wu, CW Chen, CT Liang, ... Nano Letters 22 (6), 2270-2276, 2022	11	2022
P-Type Ohmic Contact to Monolayer WSe₂ Field-Effect Transistors Using High-Electron Affinity Amorphous MoO₃ YH Chen, K Xing, S Liu, LN Holtzman, DL Creedon, JC McCallum, ... ACS Applied Electronic Materials 4 (11), 5379-5386, 2022	9	2022
Defects, band bending and ionization rings in MoS2 I Di Bernardo, J Blyth, L Watson, K Xing, YH Chen, SY Chen, ... Journal of Physics: Condensed Matter 34 (17), 174002, 2022	8	2022
The key role of non-local screening in the environment-insensitive exciton fine structures of transition-metal dichalcogenide monolayers WH Li, JD Lin, PY Lo, GH Peng, CY Hei, SY Chen, SJ Cheng Nanomaterials 13 (11), 1739, 2023	7	2023
Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces PH Wang, FY Shih, SY Chen, AB Hernandez, PH Ho, LY Chang, ... Carbon 93, 353-360, 2015	7	2015

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