Artiklar med krav på offentlig åtkomst - Hooman MohseniLäs mer
Inte tillgängliga någonstans: 6
Enhancement of electron-injection detector performance by their unique three-dimensional geometry
V Fathipour, H Mohseni
Infrared Sensors, Devices, and Applications V 9609, 34-39, 2015
Krav: US Department of Energy
Uncooled long-wavelength infrared photodetectors using narrow bandgap semiconductors
M Razeghi, J Wojkowski, JD Kim, H Mohseni, JJ Lee
Compound Semiconductors 1998, 91-98, 2021
Krav: US Department of Defense
Tuning the gain-bandwidth product of electron Injector photodetectors
S Bianconi, M Rezaei, H Mohseni
Quantum Sensing and Nano Electronics and Photonics XVI 10926, 343-348, 2019
Krav: US National Science Foundation
A new detector for high-speed swept source optical coherence tomography
V Fathipour, H Mohseni
Infrared Sensors, Devices, and Applications V 9609, 40-44, 2015
Krav: US Department of Energy
Embedded plasmonic-enhanced quantum well infrared photodetector
RL Brown, A Bonakdar, SJ Jang, OG Memis, H Mohseni
Infrared Sensors, Devices, and Applications IV 9220, 42-47, 2014
Krav: US Department of Energy
Biosensing II
M Razeghi, H Mohseni
Biosensing II 7397, 2009
Krav: German Research Foundation
Tillgängliga någonstans: 41
Cascaded spintronic logic with low-dimensional carbon
JS Friedman, A Girdhar, RM Gelfand, G Memik, H Mohseni, A Taflove, ...
Nature communications 8 (1), 15635, 2017
Krav: US National Institutes of Health
Recent advances in infrared imagers: toward thermodynamic and quantum limits of photon sensitivity
S Bianconi, H Mohseni
Reports on Progress in Physics 83 (4), 044101, 2020
Krav: US National Science Foundation, US Department of Defense, US National …
Impact of three-dimensional geometry on the performance of isolated electron-injection infrared detectors
V Fathipour, SJ Jang, IH Nia, H Mohseni
Applied Physics Letters 106 (2), 2015
Krav: US Department of Energy
Surface passivation and aging of InGaAs/InP heterojunction phototransistors
MS Park, M Razaei, K Barnhart, CL Tan, H Mohseni
Journal of Applied Physics 121 (23), 2017
Krav: US National Science Foundation
Characterization of the optical properties of turbid media by supervised learning of scattering patterns
I Hassaninia, R Bostanabad, W Chen, H Mohseni
Scientific reports 7 (1), 15259, 2017
Krav: US National Science Foundation, US Department of Defense
Analytical modeling and numerical simulation of the short-wave infrared electron-injection detectors
Y Movassaghi, V Fathipour, M Fathipour, H Mohseni
Applied Physics Letters 108 (12), 2016
Krav: US National Science Foundation
InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding
MS Park, M Rezaei, I Nia, R Brown, S Bianconi, CL Tan, H Mohseni
Optical Materials Express 8 (2), 413-419, 2018
Krav: US National Science Foundation, US Department of Defense
Highly sensitive SWIR detector array based on nanoscale phototransistors integrated on CMOS readout
L Liu, J Rabinowitz, S Bianconi, MS Park, H Mohseni
Applied Physics Letters 117 (19), 2020
Krav: US National Science Foundation, US Department of Energy, US Department of …
Demonstration of shot-noise-limited swept source OCT without balanced detection
V Fathipour, T Schmoll, A Bonakdar, S Wheaton, H Mohseni
Scientific reports 7 (1), 1183, 2017
Krav: US Department of Defense
A new approach to designing high-sensitivity low-dimensional photodetectors
M Rezaei, S Bianconi, LJ Lauhon, H Mohseni
Nano letters 21 (23), 9838-9844, 2021
Krav: US National Science Foundation, US Department of Defense, US National …
InGaAs based heterojunction phototransistors: Viable solution for high-speed and low-noise short wave infrared imaging
M Rezaei, MS Park, C Rabinowitz, CL Tan, S Wheaton, M Ulmer, ...
Applied Physics Letters 114 (16), 2019
Krav: US National Science Foundation, US Department of Energy, US Department of …
Advances on sensitive electron-injection based cameras for low-flux, short-wave infrared applications
V Fathipour, A Bonakdar, H Mohseni
Frontiers in Materials 3, 33, 2016
Krav: US National Science Foundation, US Department of Energy
On the sensitivity of electron-injection detectors at low light level
V Fathipour, IH Nia, A Bonakdar, H Mohseni
IEEE Photonics Journal 8 (3), 1-7, 2016
Krav: US National Science Foundation
Open architecture time of flight 3D SWIR camera operating at 150 MHz modulation frequency
S Wheaton, A Bonakdar, IH Nia, CL Tan, V Fathipour, H Mohseni
Optics Express 25 (16), 19291-19297, 2017
Krav: US National Science Foundation, US Department of Defense
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